IBM0165805B8M
Abstract: IBM0165805BJ3D-50 IBM0165805BJ3D-60 IBM0165805P8M TSOP-32
Text: Discontinued 12/98 - last order; 3/99 last ship IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply
|
Original
|
IBM0165805B8M
IBM0165805P8M
IBM0165805B
IBM0165805P
104ns
IBM0165805BJ3D-50
IBM0165805BJ3D-60
TSOP-32
|
PDF
|
jedec ms-024
Abstract: IBM0165805B8M IBM0165805BJ3C-50 IBM0165805BJ3C-60 IBM0165805P8M TSOP-32
Text: IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM ADVANCED Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:
|
Original
|
IBM0165805B8M
IBM0165805P8M
IBM0165805B
IBM0165805P
104ns
SA14-4241-02
jedec ms-024
IBM0165805BJ3C-50
IBM0165805BJ3C-60
TSOP-32
|
PDF
|
IBM0165805B8M
Abstract: IBM0165805BJ5B-50 IBM0165805BJ5B-60 IBM0165805P8M 4241-01
Text: IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode
|
Original
|
IBM0165805B8M
IBM0165805P8M
IBM0165805B
IBM0165805P
104ns
IBM0165805BJ5B-50
IBM0165805BJ5B-60
4241-01
|
PDF
|
IBM0165805B8M
Abstract: IBM0165805BJ5B-50 IBM0165805BJ5B-60 IBM0165805P8M
Text: IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode
|
Original
|
IBM0165805B8M
IBM0165805P8M
IBM0165805B
IBM0165805P
104ns
IBM0165805BJ5B-50
IBM0165805BJ5B-60
|
PDF
|
64mb edo dram simm
Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s
|
Original
|
|
PDF
|
2m x 32 SRAM SIMM
Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
Text: Table of Contents Index Numbering Guides Part Number Type Org A dd r Voltage IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B IBM0116400M IBM0116400P IBM0116405 IBM0116405B IBM0116405M IBM0116405P
|
Original
|
IBM0116160
IBM0116160B
IBM0116160M
IBM0116160P
IBM0116165
IBM0116165B
IBM0116165M
IBM0116165P
IBM0116400
IBM0116400B
2m x 32 SRAM SIMM
IBM11M4735CB
SIMM 72
IBM0116400M
IBM038329P
IBM025161L
dimm 168
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
|
OCR Scan
|
IBM0165805B
IBM0165805P
104ns
256ms
400fiA)
414mW
SA14-4241
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P 8 M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: -50 -60 !I rac ! R AS Access Time 50ns 60ns !tcAC ! CAS Access Time 13ns ' 5ns |tAA ! Column Address Access Tim e
|
OCR Scan
|
IBM0165805B
IBM0165805P
104ns
504mW
88H2009
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P 8M x 8 12/11 EDO ORAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: -50 -60 tRAC RAS Access Time 50ns 60ns tCAC CAS Access Time 13ns 15ns • Extended Data Out Hyper Page Mode
|
OCR Scan
|
IBM0165805B
IBM0165805P
104ns
472mW
155ma
135ma
130ma
27H6251
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P 8 M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time RAS only Refresh - 4096 cycles/Retention Time
|
OCR Scan
|
IBM0165805B
IBM0165805P
104ns
504mW
|
PDF
|
0165805BT3C-60
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Mod ify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time RAS Access Time 50ns
|
OCR Scan
|
IBM0165805B
IBM0165805P
256ms
400jiA)
104ns
504mW
SOJ-32
400mil)
TSOP-32m
0165805BT3C-60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Table of Contents Alphanumeric In d ex . DRAM Numbering . Quality and Reliability. Part Number Oranization . 5 . 7 . 9 Features
|
OCR Scan
|
IBM014400.
IBM014400P.
IBM014400M
IBM014400B.
IBM014405.
IBM014405P.
IBM0316809C.
IBM0316169C.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IB M 0 1 6 5 8 0 5 B IB M 0 1 6 5 8 0 5 P P re lim in a ry 8M x 8 12/11 E D O DRA M Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode • CAS before RAS Refresh
|
OCR Scan
|
256ms
104ns
472mW
IBM0165805B
IBM0165805P
0165805B
|
PDF
|
