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    e24526

    Abstract: IBM0316169C IBM0316809C
    Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM


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    IBM0316409C IBM0316169C IBM0316809C IBM13Q4739CC 200-Pin e24526 PDF

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    Abstract: No abstract text available
    Text: IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • Programmable Operation: • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM • Performance: -10 : U nits j ! fcK j C lo c k F re q u e n c y


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    IBM13Q4739CC 200-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13Q4739CC 4M x 72 Buffered SDRAM Module Features • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2* -10 ! Units ! fcK I Clock Frequency 66 ! MHz jtcK2 j Clock Cycle


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    IBM13Q4739CC 200-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM 13Q 4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • Automatic and controlled Precharge Commands • 4M x 72 Synchronous DRAM DIMM -SDRAM CAS Latency: 2 -Burst Type: Sequential or Interleave


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    4739CC 200-Pin PDF