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    IC 1200 P 60 Search Results

    IC 1200 P 60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 1200 P 60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SGCT

    Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
    Text: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H


    Original     		CM800HA34H CM1200HA- CM1600HC- CM1800HC34H CM800HB50H CM1200HD50H CM800HB66H CM1200HB66H CM400HB- CM600HB90H SGCT mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT PDF

    A 7800

    Abstract: a7800
    Text: FZ 1200 R 12 KF 1 Transistor Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A Ic Thermal properties DC, pro B a u ste in /p e r m odule 0,016 °C/W pro Baustein / per module 0,008 °C/W


    OCR Scan     		PDF

    free ic 555

    Abstract: H9140
    Text: 1200 -1 6 0 0 MHz Standard Hybrid Amplifier P a ra m e te rs 1200-1600 M H z bandwidth Ann a nfiR ^£Drl~4UUO S p e c if ic a t io n Temperature +25 Frequency range dB + I.0/-I.0 dB M ax dB M ax p-p Gain flatness 1.0 1.0 Reverse isolation 11 1 VSW R °c MHz


    OCR Scan     		H91-40 free ic 555 H9140 PDF

    Untitled

    Abstract: No abstract text available
    Text: nixYS Common Cathode Fast Recovery Epitaxial Diode FRED DSEK30 r— v nsM V v RRM V 1200 1200 ~l Type I -N -. f 4 " — A DSEK 30-12A iFAVM ic V,RR M 2x26 A 1200 V t„ 40 ns TO-247 AD Î A A C (TAB) Symbol Test C onditions ^FRMS "^"vj IpAVM ^FRM JPdt P,o,


    OCR Scan     		DSEK30 0-12A O-247 1997IXYS 4bflb52b PDF

    siemens igbt BSM 300

    Abstract: siemens igbt BSM 75 gb 100 siemens igbt BSM 100 gb bsm 50 Gb 120 IGBT GAL 200 gb BSM 15 GB C67070-A2111-A70 C67076-A2006-A70 C67076-A2109-A siemens igbt BSM
    Text: IGBTLeistungsmodule Typ Type IGBTPower Modules Vce V Ic A ^thJC K/W Aöt W Halbbrücken P^CEsantyp. V Bestellnummer Ordering Code Bild Figure Half-Bridges BSM 25 GB 120 DN 2 1200 2x25 <0.6 200 2.7 C67076-A2109-A70 17b BSM 35 GB 120 DN 2 1200 2x35 <0.44 280


    OCR Scan     		C67076-A2109-A70 C67070-A2111-A70 C67076-A2105-A70 C67076-A2106-A70 2x100 C67076-A2107-A70 C67070-A2107-A70 2x150 C67076-A2108-A70 2x200 siemens igbt BSM 300 siemens igbt BSM 75 gb 100 siemens igbt BSM 100 gb bsm 50 Gb 120 IGBT GAL 200 gb BSM 15 GB C67076-A2006-A70 C67076-A2109-A siemens igbt BSM PDF

    D61500

    Abstract: No abstract text available
    Text: APPENDIX A S P E C IF IC A T IO N S Single-Pulse Peak Current Ratings Per Safety Agency Certification Testing CSAC22.2 VAC Range 120-150 180-300 320-580 620-1000 D58 na na na na D73 1200 1200 na na D61 2000 2000 2000 na Disk Series Designation D71 D62 D69


    OCR Scan     		CSAC22 UL497B UL1414 UL1449 D61500 PDF

    LVJ DIODE

    Abstract: No abstract text available
    Text: FF 600 R 12 KF 1 Transistor Transistor Elektrische Eigenschaften Electrica] properties VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,016 DC, pro Z w e ig /p e r arm 0,032 RthCK pro B austein/p e r module


    OCR Scan     		31403HR7 LVJ DIODE PDF

    actel 5962

    Abstract: ACTEL 1020B MAX4437 6ba1 5602m e/actel 1240a
    Text: Æ ic te - m H i R e i F P G A ! v 2 .0 s Features 3 2 0 0 DX • H ighly P re d ic ta b le P erform ance w ith 100 Percent A utom atic P lacem ent and Routing • 100 M H z System Logic In teg ratio n • • Device Sizes from 1200 to 20,000 gates


    OCR Scan     		CQ208and CQ256, actel 5962 ACTEL 1020B MAX4437 6ba1 5602m e/actel 1240a PDF

    Untitled

    Abstract: No abstract text available
    Text: -L e L j W ' _ c a u n n n COMPONENTS ft AC1218 10 TO 1200 MHz A d 219 T0~ 8CASCADABLE AC1218 T yp ic a l V alues High Dynamic Range . High Output P o w e r .


    OCR Scan     		AC1218 AC1218 AC1219 AC1218/AC1219 PDF

    WESTCODE SW

    Abstract: No abstract text available
    Text: T E C H N IC A L P U B L IC A T IO N $ WESTCODE SEMICONDUCTORS D P20 ISSUE 2 May, 1989 — - - - - Stud-Base Silicon Rectifier Diodes Type PCN/PCR020 30amperes average: up to 1200 volts Vr r m RATINGS Maximum values at 175°C Tj unless stated otherwise


    OCR Scan     		PCN/PCR020 30amperes WESTCODE SW PDF

    RGE 17-18

    Abstract: TO220-4 weight
    Text: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i


    OCR Scan     		15N120C O-220 O-263 RGE 17-18 TO220-4 weight PDF

    U 3870

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS n ic K ic o z i series • Dimensions 160V 2C Cap. ( m F) 390 470 560 680 820 1000 1200 1500 1800 2200 2700 Size /DXL(mm) B a te d rip p le (m A ) 20 X 2 5 20X30 22X25 200V (2D) tan S LeakageCurrent (mA) Code 1190 0.15 0.74


    OCR Scan     		LLN2C391MHLY25 LLN2C471MHLY30 LLN2C471MHLZ25 LLN2C561MHLY30 LLN2C561MHLZ25 LLN2C681MHLY35 LLN2C681MHLZ30 LLN2C681MHLA25 LLN2C821MHLY40 LLN2C821MHLZ35 U 3870 PDF

    7SR10

    Abstract: FF75R10KF2 75r10kf2
    Text: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm


    OCR Scan     		FFT5B12KF2 4035T7 7SR10 FF75R10KF2 75r10kf2 PDF

    Untitled

    Abstract: No abstract text available
    Text: FS 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,068 °C/W DC, pro Z w e ig /p e r arm 0,410 °C/W Maximum rated values V q ES Ic 1200


    OCR Scan     		00DE074 PDF

    C45N equivalent

    Abstract: general electric c350 C350 cdi dc with scr for 15 ampere, 12 volt C150P C147D TRANSISTOR D1651 General electric SCR C147M C147 C45U
    Text: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00


    OCR Scan     		2N1909-16 2N1792-98 C45N equivalent general electric c350 C350 cdi dc with scr for 15 ampere, 12 volt C150P C147D TRANSISTOR D1651 General electric SCR C147M C147 C45U PDF

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W


    OCR Scan     		34032T7 0002G13 PDF

    General electric SCR C147M

    Abstract: C147N C147pb SCR C147PB GE C147P GE C150 C147 C52U C147D GE C147S
    Text: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}


    OCR Scan     		2N1909-16 2N1792-98 General electric SCR C147M C147N C147pb SCR C147PB GE C147P GE C150 C147 C52U C147D GE C147S PDF

    General Electric SCR C52T

    Abstract: C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E
    Text: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S | V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}


    OCR Scan     		2N1909-16 2N1792-98 General Electric SCR C52T C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E PDF

    c45 scr

    Abstract: scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350
    Text: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 2N 1909-16 2 N 1792-98 JEOEC C 60, 62 C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00


    OCR Scan     		2N1909-16 2N1792-98 CA-20 Vis-20 c45 scr scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350 PDF

    C520D

    Abstract: C530A C600PB scr high current C520C C530 C530B C501PS C520A GE SCR 1000
    Text: PHASE CONTROL SCR’s HIGH CURRENT 850 TO 1400 AM PERES GE TYPE C501 C530 C520 C600 C601 C602 700 -1700 100 - 600 100 - 400 500 - 1200 1100-1700 1600 - 2600 E L E C T R IC A L S P E C IF IC A T IO N S V O LTAG E RANGE FORW ARD C O N D U C T IO N I t |»ms


    OCR Scan     		C530A C520A C530B C520S C530C C520C' C530D C520D C530E C600E C520D C600PB scr high current C520C C530 C501PS C520A GE SCR 1000 PDF

    chn 521

    Abstract: BA 7277 chn 548 carrier detect phase shift CHN 65 chn233 SCR 2122 Integrated 7246 MICRONAS BSP carrier detect phase shift key
    Text: * MICRONAS MAS 2122 300/1200 BPS FULL DUPLËX MODEM P IN C O N F IG U R A T IO N S A P P L IC A T IO N S Extended M ode - /j P C ontrolled Bell 212 A, 103 and 113 Modems EXTENDED CCITT V.22 A, B and V.21 Modems DB7 Dialing DB6 DBS Call Progress Tone Monitoring


    OCR Scan     		RS-232C 22-PIN 28-PIN 40-PIN SF-02771 chn 521 BA 7277 chn 548 carrier detect phase shift CHN 65 chn233 SCR 2122 Integrated 7246 MICRONAS BSP carrier detect phase shift key PDF

    800A

    Abstract: No abstract text available
    Text: FZ 800 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e rm o d u le 0,02 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A pro Baustein / per module Ic °C/W


    OCR Scan     		800At 125-C, 800A PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE, HIGH CURRENT ULTRA-FAST RECOVERY SILICON RECTIFIER DIODES P RV 1200 1500 1800 TYPE 3RUS2120 3RUS4120 3RUS2150 3RUS4150 3RUS2180 3RUS4180 ELECTRICAL C H A R A C T E R IST IC S at T a =25°C Unless Otherwise Specified 3RUS2 3RUS4 1.25 Amp 1.50 Amp


    OCR Scan     		3RUS2120 3RUS4120 3RUS2150 3RUS4150 3RUS2180 3RUS4180 50/iA 100pA PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W


    OCR Scan     		3403ES7 PDF