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    IC 400MA, NPN TRANSISTOR Search Results

    IC 400MA, NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IC 400MA, NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DTC943TUB NPN 400mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Value VCEO VEBO IC R1 20V 40V 400mA 4.7kW UMT3F Collector Base Emitter DTC943TUB (SC-85) lFeatures 1) Built-In Biasing Resistors 2) High Breakdown Voltage of Emitter to Base


    Original     		PDF DTC943TUB 400mA 400mA SC-85) R1102A

    Untitled

    Abstract: No abstract text available
    Text: DTC914TUB NPN 400mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Value VCEO VEBO IC R1 20V 40V 400mA 10kW UMT3F Collector Base Emitter DTC914TUB (SC-85) lFeatures 1) Built-In Biasing Resistors 2) High Breakdown Voltage of Emitter to Base


    Original     		PDF DTC914TUB 400mA 400mA SC-85) R1102A

    Untitled

    Abstract: No abstract text available
    Text: UMH32N NPN 400mA 20V Complex Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Tr1 and Tr2 VCEO VEBO IC R1 20V 40V 400mA 4.7kW UMT6 (6) (1) (2) (5) (4) (3) UMH32N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors


    Original     		PDF UMH32N 400mA 400mA OT-353 SC-88) DTC943TUB R1102A

    Untitled

    Abstract: No abstract text available
    Text: DTC923TUB NPN 400mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Value VCEO VEBO IC R1 20V 40V 400mA 2.2kW UMT3F Collector Base Emitter DTC923TUB (SC-85) lFeatures 1) Built-In Biasing Resistors 2) High Breakdown Voltage of Emitter to Base


    Original     		PDF DTC923TUB 400mA 400mA SC-85) R1102A

    Untitled

    Abstract: No abstract text available
    Text: UMH33N NPN 400mA 20V Complex Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Tr1 and Tr2 VCEO VEBO IC R1 20V 40V 400mA 2.2kW UMT6 (6) (1) (2) (5) (4) (3) UMH33N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors


    Original     		PDF UMH33N 400mA 400mA OT-353 SC-88) DTC923TUB R1102A

    HN4C05JU

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Unit: mm Low Frequency Amplifier Applications Muting Applications Switching Applications Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.)


    Original     		PDF HN4C05JU 400mA HN4C05JU

    Untitled

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifer Applications Muting Application Switching Application Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.)


    Original     		PDF HN1C05FE 400mA

    Untitled

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Unit: mm Low Frequency Amplifer Applications Muting Application Switching Application Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.)


    Original     		PDF HN4C05JU 400mA

    hn1c05FE

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.)


    Original     		PDF HN1C05FE 400mA hn1c05FE

    HN4C05JU

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications z Unit: mm Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current :IC=400mA(Max.)


    Original     		PDF HN4C05JU 400mA HN4C05JU

    hn1c05FE

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current :IC=400mA(Max.)


    Original     		PDF HN1C05FE 400mA hn1c05FE

    Untitled

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications Unit: mm z Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current : IC = 400mA(Max.)


    Original     		PDF HN4C05JU 400mA

    Untitled

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1) = 15mV (typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current : IC = 400mA (max)


    Original     		PDF HN1C05FE 400mA

    Untitled

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications z Unit: mm Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current :IC=400mA(Max.)


    Original     		PDF HN4C05JU 400mA

    SOT-89

    Abstract: TSB1664CY TSD1664 sot89 "NPN TRANSISTOR"
    Text: TSD1664 Low Frequency NPN Transistor BVCEO = 20V Ic = 800mA VCE SAT , = 0.15V(typ.) @Ic / Ib = 400mA / 20mA Pin assignment: 1. Base 2. Collector 3. Emitter Features — Ordering Information Low VCE (SAT). Part No. — Excellent DC current gain characteristics


    Original     		PDF TSD1664 800mA 400mA TSB1664CY OT-89 TSB1664 OT-89 SOT-89 TSB1664CY TSD1664 sot89 "NPN TRANSISTOR"

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50


    Original     		PDF HN1C07F 400mA 100mA 100mA,

    KTA1021

    Abstract: KTC1020
    Text: SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES A ᴌExcellecnt hFE Linearity O F : hFE 2 =25Min. : VCE=6V, IC=400mA. ᴌ1 Watt Amplifier Application. H M G ᴌComplementary to KTA1021.


    Original     		PDF KTC1020 25Min. 400mA. KTA1021. KTA1021 KTC1020

    transistor Marking code n03

    Abstract: ic n03 DN100S DP100S marking N03 marking code N03
    Text: DN100S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.15V Typ. @IC /IB =400mA/20mA) • Suitable for low voltage large current drivers • Complementary pair with DP100S • Switching Application


    Original     		PDF DN100S 400mA/20mA) DP100S OT-23F KST-2117-000 100mA 400mA, transistor Marking code n03 ic n03 DN100S DP100S marking N03 marking code N03

    Untitled

    Abstract: No abstract text available
    Text: P * FORWARD INTERNATIONAL ELECTRONICS LTD. KTC3202 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES * Excellent Hfe Linearity :Hfe 2 =25(Min) at Vce=6V, Ic=400mA. ♦Complementary toKTA1270


    OCR Scan     		PDF KTC3202 400mA. toKTA1270 100mA 400rnA 100mA

    KTC1020

    Abstract: KTA1021
    Text: SEMICONDUCTOR TECHNICAL DATA KTC1020 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellecnt Iife Linearity : hFE 2 =25Min. : V Ce =6V, Ic=400mA. • 1 Watt Amplifier Application. • Complementary to KTA1021.


    OCR Scan     		PDF KTC1020 25Min. 400mA. KTA1021. T0-92M 100mA KTC1020 KTA1021

    KTA1270

    Abstract: KTC3202
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3202 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e linearity : hFE 2 =25Min. : VCE=6V, Ic=400mA. • Complementary to KTA1270.


    OCR Scan     		PDF KTC3202 25Min. 400mA. KTA1270. KTA1270 KTC3202

    KTA1505

    Abstract: KTC3876
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3876 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Linearity : hFE 2 =25(Min.) a t V ce =6V, Ic=400mA. • Complementary to KTA1505. DIM


    OCR Scan     		PDF KTC3876 400mA. KTA1505. 15/TER OT-23 100mA 400mA 100mA, 25Min. KTA1505 KTC3876

    KTA1021

    Abstract: KTC1020
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC1020 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellecnt Ii f e Linearity : hFE 2 =25Min. : V Ce =6V, Ic=400mA. • 1 Watt Amplifier Application.


    OCR Scan     		PDF KTC1020 25Min. 400mA. KTA1021. T0-92M KTA1021 KTC1020

    KTA2015

    Abstract: KTC4076
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Linearity : hFE 2 =25(Min.) a t V ce =6V, Ic=400mA. • Complementary to KTA2015.


    OCR Scan     		PDF KTC4076 400mA. KTA2015. 100mA 400mA 100mA, 25Min, 40Min. KTA2015 KTC4076