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    IC 4440 A Search Results

    IC 4440 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC 4440 A Price and Stock

    Hirschmann Electronics GmbH & Co Kg STARTER PACKAGE 10 NODES LICEN

    Software STARTER PACKAGE 10 NODES LICEN
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    • 1 $1237.66
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    • 100 $1237.66
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    Hirschmann Electronics GmbH & Co Kg STARTER PACKAGE 5 NODES LICENS

    Software STARTER PACKAGE 5 NODES LICENS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics STARTER PACKAGE 5 NODES LICENS
    • 1 $954.02
    • 10 $954.02
    • 100 $954.02
    • 1000 $954.02
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    IC 4440 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM 4440

    Abstract: LA 4440 IC LA 4440 IC DATA ic 4440 ic la 4440 la 4440 Siemens SLE 4442 SLE4442C Circuits using 4440 IC Siemens SLE
    Text: ICs for Chip Cards SLE 4432/42 Intelligent 256-Byte EEPROM SLE 4440 Intelligent 64-Byte EEPROM SLE 4441 Intelligent 128-Byte EEPROM Data Sheet 09.98 Extension SLE 4432/40/41/42 Data Sheet Extension Revision History: Original Version 09.98 Previous Releases:


    Original     		PDF 256-Byte 64-Byte 128-Byte LM 4440 LA 4440 IC LA 4440 IC DATA ic 4440 ic la 4440 la 4440 Siemens SLE 4442 SLE4442C Circuits using 4440 IC Siemens SLE

    IC CD 4440 pin diagram

    Abstract: pin diagram of ic 4440 PM2101 JISC8714 PM2301 Philips MARKING CODE PCB diagram of ic 4440 PM2101AST ic 4440 circuit diagram marking R1E
    Text: 2.0 A USB switching mode battery charger PM2101 Data sheet Features • DC/DC step-down battery charger • High efficiency up to 92%  No external component needed  500 mA maximum output current  Operation at 1.6 MHz with 1 µH coil •  USB path with 1.5 A and MAIN path with 2.0 A


    Original     		PDF PM2101 52Current 1/1424-LZN IC CD 4440 pin diagram pin diagram of ic 4440 PM2101 JISC8714 PM2301 Philips MARKING CODE PCB diagram of ic 4440 PM2101AST ic 4440 circuit diagram marking R1E

    CNY17F Fairchild

    Abstract: CNT17-3.300W Fairchild CNY17F2
    Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled


    Original     		PDF MOC8101 MOC8105 CNY17F-1 MOC810X CNY17F-X MOC8102 MOC8106 CNY17F-2 MOC8103 CNY17F Fairchild CNT17-3.300W Fairchild CNY17F2

    ic 4440

    Abstract: 5082-4440 ic 5082 4440 4440 amp 5082-4415 4444 5082 F 5082 5082-4403
    Text: 5082-4403 5082-4415 5082-4440 5082-4444 H E W L E T T ^ PACKARD CO M PO N EN TS T E C H N IC A L D ATA APR IL 1976 Features EASILY PANEL M O UNTABLE i 1 METAL BASE HIG H BRIGHTNESS OVER A WIDE VIEW ING ANGLE 8.64 .34 .76 (.03) I RUGGED C O N S T R U C T IO N FOR EASE


    OCR Scan     		PDF

    3733

    Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
    Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090


    OCR Scan     		PDF TQ-60 T0-60 15BAL 28/2x100 450SQ4LFL 3733 imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090

    Untitled

    Abstract: No abstract text available
    Text: S GS-TH O M SO N ?1C D î'ü S T E B ? ; ODGMfitiO - 0 | rT " 3 3 - 6 f THOMSON SEMICONDUCTORS wideband VHF - UHF class C for ECM and radio links applications V cc PACKAGE TYPE ^out Frequency m in range M H z CONFIG. (V ) • (W) 2N 3866 2N 5090 2N 5635


    OCR Scan     		PDF T0-60 tCB-400)

    power amplifier IC 4440

    Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
    Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min


    OCR Scan     		PDF TQ-60 T0-60 BSX33 2N956 power amplifier IC 4440 BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38

    3733

    Abstract: c3228 transistor power
    Text: WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS TYPE {N3866 ?N 5090 ?N5635 2N 3375 THM404 2N 4440 3N5636 •OHM 408 SO 1475 2N 3733 2N 5016 THM416 2N 5637 T H M 4Î5 TDSOIOWO SD 1462 SD 1 4& * SD 1470 SD 9130 TCC0105-100 ICC 0204-125 PACKAG E


    OCR Scan     		PDF

    NSL-4460

    Abstract: NSL-4470 NSL-4450 FTC 580 e/NSL-801
    Text: SILONEX INC 23E BSSS571 GDQGa'iT □ SILONEX; 1 W A T T PHOTOCONDUCTIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated • Maximum Operating Voltage:


    OCR Scan     		PDF BSSS571 NSL-4400 /LL40\ NSL-4460 NSL-4470 NSL-4450 FTC 580 e/NSL-801

    rca 40290

    Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
    Text: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry


    OCR Scan     		PDF to-72 1N1183A-1 1190AA D2406F-D2406M* 1N3879-1N3883* D2412F-D2412M* 1N3889-1N3893* D2520F-D2520M* 1N3899-1N3903* 1N3909-1 rca 40290 RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012

    THB598

    Abstract: C-22-B C22B cb307 THX 230 5352N CB-295 2n 531
    Text: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) 8 7


    OCR Scan     		PDF CB-27) CB-307) O-129 CB-295) CB-312) CB-289) CB-286) ICB-298) CB-400) CB-293) THB598 C-22-B C22B cb307 THX 230 5352N CB-295 2n 531

    L0619

    Abstract: No abstract text available
    Text: 1 W ATT PHOTOCONDUCTIVE CELLS N SL-4400 SERIES FcA i bR :3 • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on dem and* - Plastic Encapsulated • Maximum Operating Voltage: 1000 V Peak AC or DC


    OCR Scan     		PDF SL-4400 L0619

    Untitled

    Abstract: No abstract text available
    Text: S C IE N T IF IC / M IN I- C IR C U IT S 4SE ]> • flO b flflll 0001345 most widely-used Frequency Mixers LEVEL 7 T S 1! ■ see T~ ? 4 - 0 9 ~ 0 1 Model SIMA-5 +7 dBm LO, up to +1 dBm RF c o m p u te r-a u to m a te d p e rfo rm a n c e d a ta typical production unit / for data of other models consult factory


    OCR Scan     		PDF IN1000

    LA 4440 IC

    Abstract: L 4440 ic 4440 3TE445 3TX603 BDY15 BDY16 bd 106 case 603 b bd 3055
    Text: NPN Silicon Power Transistors NPN Silicon Epitaxial Planar Transistors in SOT-9 SO-55 metal case For l.f. driver and output stages and high power switching Type Maximum Ratings Characteristics at Tlimh ~ 25 °C @ VCE = 2 V fc - 0,5 A @ "^case — 25 °C


    OCR Scan     		PDF BDY15 LA 4440 IC L 4440 ic 4440 3TE445 3TX603 BDY16 bd 106 case 603 b bd 3055

    Untitled

    Abstract: No abstract text available
    Text: APT10088HVR ADVANCED POW ER Te c h n o l o g y 1000V 11A 0.8800 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10088HVR O-258 APT10088HVR

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W .\A APT5020BVFR pow er Te c h n o l o g y “ soov POWER MOS V 26a 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5020BVFR O-247

    t 3866 power transistor

    Abstract: TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040
    Text: 2N5709 SIL IC O N NPIM V H F POWER T R A N SIST O R 873 80 W PEP SIN G L E S ID E B A N D T R A N SIS T O R mechanical specification D IA 4 L absolute maximum ratings T Ca s e = 25 °C Collector-Base V o l t a g e . 7 0 V


    OCR Scan     		PDF 2N5709 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040

    Untitled

    Abstract: No abstract text available
    Text: A • R W .\A A P T 12 0 1 R 5 B V R dvanced pow er Te c h n o l o g y “ 1200V io a 1.500Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF O-247 APT1201R5BVR

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


    OCR Scan     		PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    Untitled

    Abstract: No abstract text available
    Text: APT8056BVR A dvanced P ow er Te c h n o l o g y ' 800V 16A 0.560Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8056BVR O-247

    Untitled

    Abstract: No abstract text available
    Text: • R A dvan c ed r M po w er APT5020SVR Te c h n o lo g y soov 26a 0.200Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5020SVR

    550C

    Abstract: DAC85 DAC87 DAC87-CBI-I DAC87-CBI-V MSI MS-3
    Text: 000 DDC DAC87 IL C D A T A D E V IC E C O R P O R A T IO N 12 B IT HYBRID D /A C O N V E R TE R W ID E O P ER A TIN G TE M P E R A TU R E R AN G E 100ns Current Settling; 3 / / s Voltage Settling FEATURES • G UARA NTEED SPECIFICATIO NS FRO M —5 5 °C TO +126° C


    OCR Scan     		PDF DAC87 DAC87 DAC87, DAC87-CBI-V DAC87-CBI-I, -883B L-STD-202E, MIL-STD-883 550C DAC85 DAC87-CBI-I MSI MS-3

    C30016

    Abstract: No abstract text available
    Text: APT8056BVFR A dvanced P ow er Te c h n o l o g y ' 800V POWER MOS V‘ 16A 0.560Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8056BVFR O-247 C30016

    74HC368

    Abstract: No abstract text available
    Text: GD54/74HC368, GD54/74HCT368 HEX 3-STATE INVERTING BUFFERS General Description These d ev ic e s are identical in pinout to the Pin Configuration 5 4 /7 4 L S 3 6 8 . T h e y have high drive current outputs which enable high sp e e d operation even w hen driv­


    OCR Scan     		PDF GD54/74HC368, GD54/74HCT368 74HC368