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    IC 810 DATASHEET Search Results

    IC 810 DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HS9-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    HS1-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 810 DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AZ810NLTR

    Abstract: marking n2c sot AZ809NLTR markingn2csot
    Text: Preliminary Datasheet 3-PIN MICROPROCESSOR RESET CIRCUITS AZ809/AZ810 General Description Features The AZ809/810 microprocessor supervisory circuits can be used to monitor the power supplies in microprocessor and digital systems. They provide a reset to the


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    PDF AZ809/810 240ms AZ809 AZ810 AZ810NLTR marking n2c sot AZ809NLTR markingn2csot

    TPS3809

    Abstract: reset IC sot25 SOT-23R APX809 APX823 w6 SOT 23 APX810 APX824 APX825A MAX825
    Text: Diodes, Inc.’s New Product Announcement, May 2, 2008 Microprocessor Supervisory and Re-set ICs for Digital Systems Designed for Microprocessor or Microcontroller based electronic systems:


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    PDF APX809/810 OT-23 OT-23R APX809 APX810 OT-25L APX823 APX824 OT-26L APX825A TPS3809 reset IC sot25 SOT-23R w6 SOT 23 APX810 APX824 APX825A MAX825

    Untitled

    Abstract: No abstract text available
    Text: MIC809/810 Microprocessor Reset Circuits General Description Features The MIC809 and MIC810 are inexpensive microprocessor supervisory circuits that monitor power supplies in microprocessor-based systems. • Precision voltage monitor for 3V, 3.3V, or 5V power


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    PDF MIC809/810 MIC809 MIC810 OT-23 SC70-packaged OT-23 140ms SC-70

    CIRCUIT DIAGRAM FOR IC 810

    Abstract: ic 810 pin diagram IC 810 datasheet MIC809 MIC809-5 MIC809JU MIC809LU MIC809MU MIC809RU MIC809SU
    Text: MIC809/810 Micrel MIC809/810 Microprocessor Reset Circuits Final Information General Description Features The MIC809 and MIC810 are inexpensive microprocessor supervisory circuit that monitors power supplies in microprocessor based systems. The function of this device is to assert a reset if either the


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    PDF MIC809/810 MIC809 MIC810 140ms MIC809/810 CIRCUIT DIAGRAM FOR IC 810 ic 810 pin diagram IC 810 datasheet MIC809-5 MIC809JU MIC809LU MIC809MU MIC809RU MIC809SU

    telephone ring led indicator

    Abstract: LXCL-PWF1 PIC LED LTC3453 DC810
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 810 HIGH EFFICIENCY BUCK-BOOST FLASH LED DRIVER LTC3453 DESCRIPTION Demonstration circuit 810 is a high efficiency buckboost flash LED driver featuring the LTC 3453 and the LXCL-PWF1 Lumileds Luxeon Flash. The board is


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    PDF LTC3453 500mA 300ms 150mA 300ms, telephone ring led indicator LXCL-PWF1 PIC LED LTC3453 DC810

    5101as

    Abstract: L5101 high speed mosfet driver LM5101 1299 mosfet LM510X L5101AM
    Text: LM5100/LM5101 High Voltage High Side and Low Side Gate Driver General Description The LM5100/LM5101 High Voltage Gate Drivers are designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of


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    PDF LM5100/LM5101 LM5100) LM5101) AN-556: AN-558: 25-Apr-2005] 5101as L5101 high speed mosfet driver LM5101 1299 mosfet LM510X L5101AM

    CGY52

    Abstract: Q68000-A8615 MMIC marking code 52 23/MMIC marking code 52
    Text: CGY 52 GaAs MMIC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V


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    PDF CGY52 Q68000-A8615 100pF 50Ohm CGY52 Q68000-A8615 MMIC marking code 52 23/MMIC marking code 52

    HPMX-7103

    Abstract: No abstract text available
    Text: Ver. 0107 HPMX-7103 Preliminary Datasheet Single-Band Downconverter Optimized for 800MHz Applications HPMX-7103 _ Features Package Pin Configuration • Wide band operation RF input: 0.4 – 2.4 GHz IF Output: 50 – 400 MHz • High conversion gain >10 dB


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    PDF HPMX-7103 800MHz HPMX-7103 BCC-16

    CGY62

    Abstract: Q68000-A8787 HL 941
    Text: CGY 62 GaAs MMIC Datasheet * Two-stage microwave broadband amplifier IC * 50 Ω input / output * Operating voltage range: 2.7 to 5 V * High gain and output power


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    PDF Q68000-A8787 CGY62 CGY62 Q68000-A8787 HL 941

    MMIC SOT 143 marking CODE 77

    Abstract: cgy50 Q68000-A8370 SIEMENS MMIC mmic marking L mmic HL 30 MARKING SOT-143 C5 siemens rs 806
    Text: CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 Ω gain block * Application range: 100 MHz to 3 GHz


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    PDF Q68000-A8370 OT-143 MMIC SOT 143 marking CODE 77 cgy50 Q68000-A8370 SIEMENS MMIC mmic marking L mmic HL 30 MARKING SOT-143 C5 siemens rs 806

    12v transformer

    Abstract: hi-pot transformer
    Text: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Toplogy: Forward and Flyback Electrical Specifications @ 25°C - Operating Temperature -40°C to +130°C 126.7µH ±10% Lk. Inductance


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    PDF 1500Vrms PA1137NL 3V-57aiwan 12v transformer hi-pot transformer

    marking code 016 MMIC

    Abstract: RS 302 440 40 mmic marking L A444 CGY40 Q68000-A4444 mmic code marking P 18 MMIC marking code 132 MMIC marking CODE c4 MMIC marking CODE 06
    Text: CGY 40 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz


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    PDF Q68000-A4444 marking code 016 MMIC RS 302 440 40 mmic marking L A444 CGY40 Q68000-A4444 mmic code marking P 18 MMIC marking code 132 MMIC marking CODE c4 MMIC marking CODE 06

    480UH

    Abstract: 9V-50V PA136
    Text: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 3-4 (3-4) with (10,9,8,7) shorted


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    PDF PA1136NL PA1137NL PA1138NL PA1210NL PA1218NL PA1260NL 480UH 9V-50V PA136

    Untitled

    Abstract: No abstract text available
    Text: HIGH FREQUENCY WIRE WOUND TRANSFORMERS EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 DCR Hi-Pot K1 Factor


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    PDF PA1137NL PA1138NL PA1210NL 460mW 1500Vrms PA1218NL 440mW

    PA2467NL

    Abstract: PA1269 PA2369NL PA2194NL PA1136 pa2467 PA2297NL PA2369 PA136 PA232
    Text: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 3-4 (3-4) with (10,9,8,7) shorted


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    PDF

    hi-pot transformer

    Abstract: HI-POT HI-POT transformers 9 pin pulse transformer
    Text: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Toplogy: Forward and Flyback Electrical Specifications @ 25°C - Operating Temperature -40°C to +130°C 126.7µH ±10% Lk. Inductance


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    PDF 1500Vrms PA1137NL hi-pot transformer HI-POT HI-POT transformers 9 pin pulse transformer

    ic8085

    Abstract: MCS103 BGY110F ferroxcube Ee core IC808 MCB088 905-890 BGY11 uhf amplifier UHF amplifier module
    Text: N AUER PHILIPS/DISCRETE rnmps uomponents Datasheet status Product specification date of issue May 1991 bTE ]> • 1^ 33^31 DD302bû 347 * A P X BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed


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    PDF QD30Ebfl Y110D/BG Y110E/BGY110F BGY110 OT246 BGY110D, MCB105 BGY110E, BGY110F. ic8085 MCS103 BGY110F ferroxcube Ee core IC808 MCB088 905-890 BGY11 uhf amplifier UHF amplifier module

    Untitled

    Abstract: No abstract text available
    Text: October 1989 Edition 2.0 FUJITSU DATASHEET MBM10494-7/-8 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10494 is fully decoded 65536-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage applications. The device


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    PDF MBM10494-7/-8 65536-BIT MBM10494 DIP-28C-A10 MBM10494-7 MBM10494-8 28-LEA

    FPT-24CC02

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 FUJITSU DATASHEET : MBM10A474-3 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10A474 is fully decoded 4096-bit ECL read/Write random access memory designed for high-speed scratch pad, control and buffer storage applications.


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    PDF MBM10A474-3 4096-BIT MBM10A474 FPT-24C-C02) 24-PAD LCC-24CF02) FPT-24CC02

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CG Y 52 GaAs MM IC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation *Chip fully passivated * Operating voltage range: 2.7 to 5 V *50 Q. input / output 3 ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF VS005554 CGY52 Q68000-A8615 Channel-sold009 CGY52,

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS S3E D • 3 7 4 T ? b 2 OOOflbll ñ cP October 1989 Edition 1.0 FUJITSU DATASHEET' M B M 1 0 4 8 6 R R -13 r^ U -z z -o s 16384-B IT BIPOLAR SELF-TIMED RAMDOM ACCESS MEMORY DESCRIPTION n ie Fujitsu MBM10486RR-13 is futfy decoded 16384-bfl ECL self-timed readVrrite random


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    PDF 16384-B MBM10486RR-13 16384-bfl MBM10486RR-13 28-LEAD DIP-28C D28016S-2C

    x16 3 marking -ddr -sdram -rimm -sram -flash -m

    Abstract: CGY52 Q68000-A8615 mmic-amplifier 7CH150
    Text: SIEMENS GaAs MM IC CGY 52 Datasheet * Two stages monolithic microwave 1C MMICAmplifier * All gold metallisation *C h ip fully passivated •O perating voltage range: 2.7 to 5 V *5 0 Q input / output ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF CGY52 Q68000-A8615 CGY52, E3Sb05 x16 3 marking -ddr -sdram -rimm -sram -flash -m mmic-amplifier 7CH150

    mmic marking L

    Abstract: diode bzw 06 26 Q68000-A4444 Siemens MMIC A444 VCE05181 marking code 016 MMIC MMIC marking code 132 ,Siemens ceramic Capacitors MMIC marking code U
    Text: SIEMENS CGY 40 GaAs MMIC Datasheet * Single-stage monolithic microwave 1C MMICam plifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V


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    PDF VCE05181 mmic marking L diode bzw 06 26 Q68000-A4444 Siemens MMIC A444 VCE05181 marking code 016 MMIC MMIC marking code 132 ,Siemens ceramic Capacitors MMIC marking code U

    MMIC SOT 143 marking CODE 77

    Abstract: MARKING SOT-143 C5
    Text: SIEMENS CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz


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    PDF YPS05178 Q68000-A8370 OT-143 MMIC SOT 143 marking CODE 77 MARKING SOT-143 C5