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    IC A361 Search Results

    IC A361 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC A361 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCIMX51RM

    Abstract: Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129
    Text: An errata for this document is available. See Document ID#: IMX51RMAD. MCIMX51 Multimedia Applications Processor Reference Manual MCIMX51RM Rev. 1 2/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed:


    Original     		PDF IMX51RMAD. MCIMX51 MCIMX51RM EL516 MCIMX51RM Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129

    sandisk eMMC 4.41

    Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
    Text: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009


    Original     		PDF IMX25RMAD. MX251 MCIMX251) MX253 MCIMX253) MX255 MCIMX255) MX257 MCIMX257) MX258 sandisk eMMC 4.41 toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc

    tm 48f 038 transformer

    Abstract: 2j 103k 51f smd
    Text: Custom Solutions & Manufacturing Excellence From the day our company opened for business in 1947, our continuous growth as a U.S. manufacturer has been a great source of pride. We have accomplished this, in part, by providing custom solutions for your challenging circuit designs. Our products are


    Original     		PDF MIL-PRF-39010, tm 48f 038 transformer 2j 103k 51f smd

    PT1000 CONVERSION TABLE

    Abstract: ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24
    Text: Table of Contents RF Inductors Surface Mount Radial Leaded Series EMI Series 4221 Series 4222 Series 8454 Series SMB 2.5 107 108 109 110 111 112 113 114 115 Surface Mount Series P1330 Series P1812 Series 2512 Series 3483 Series S3483 Series SDS130 Series SDS680


    Original     		PDF P1330 P1812 S3483 SDS130 SDS680 SDS850 CMT4545 FW1405 SPD62 SPD42R PT1000 CONVERSION TABLE ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24

    R1Q2A72

    Abstract: top mark A36
    Text: R1QAA36*C / R1QDA36*C Series R1QAA3636CBB / R1QAA3618CBB / R1QAA3609CBB R1QDA3636CBB / R1QDA3618CBB / R1QDA3609CBB R1QGA3636CBB / R1QGA3618CBB / R1QGA3609CBB


    Original     		PDF 0000---QDRII+ R1QAA36* R1QDA36* R1QAA3636CBB R1QAA3618CBB R1QAA3609CBB R1QDA3636CBB R1QDA3618CBB R1QDA3609CBB R1QGA3636CBB R1Q2A72 top mark A36

    Untitled

    Abstract: No abstract text available
    Text: R1QJA36*CB* / R1QMA36*CB* Series R1QCA3636CBG / R1QCA3618CBG / R1QCA3609CBG R1QFA3636CBG / R1QFA3618CBG / R1QFA3609CBG R1QJA3636CBG / R1QJA3618CBG / R1QJA3609CBG R1QMA3636CBG / R1QMA3618CBG / R1QMA3609CBG


    Original     		PDF 0000---DDRII+ R1QJA36* R1QMA36* R1QCA3636CBG R1QCA3618CBG R1QCA3609CBG R1QFA3636CBG R1QFA3618CBG R1QFA3609CBG R1QJA3636CBG

    Untitled

    Abstract: No abstract text available
    Text: R1QHA36*C / R1QLA36*C Series R1QBA3636CBB / R1QBA3618CBB / R1QBA3609CBB R1QEA3636CBB / R1QEA3618CBB / R1QEA3609CBB R1QHA3636CBB / R1QHA3618CBB / R1QHA3609CBB R1QLA3636CBB / R1QLA3618CBB / R1QLA3609CBB 36-Mbit DDRII+ SRAM 2-word Burst R10DS0196EJ0010 Rev. 0.10b


    Original     		PDF R1QHA36* R1QLA36* R1QBA3636CBB R1QBA3618CBB R1QBA3609CBB R1QEA3636CBB R1QEA3618CBB R1QEA3609CBB R1QHA3636CBB R1QHA3618CBB

    Untitled

    Abstract: No abstract text available
    Text: R1QAA36*CB* / R1QDA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG


    Original     		PDF 0000---QDRII+ R1QAA36* R1QDA36* R1QAA3636CBG R1QAA3618CBG R1QAA3609CBG R1QDA3636CBG R1QDA3618CBG R1QDA3609CBG R1QGA3636CBG

    Untitled

    Abstract: No abstract text available
    Text: R1QCA36*CB* / R1QFA36*CB* Series R1QCA3636CBG / R1QCA3618CBG / R1QCA3609CBG R1QFA3636CBG / R1QFA3618CBG / R1QFA3609CBG R1QJA3636CBG / R1QJA3618CBG / R1QJA3609CBG R1QMA3636CBG / R1QMA3618CBG / R1QMA3609CBG


    Original     		PDF 0000---DDRII+ R1QCA36* R1QFA36* R1QCA3636CBG R1QCA3618CBG R1QCA3609CBG R1QFA3636CBG R1QFA3618CBG R1QFA3609CBG R1QJA3636CBG

    Untitled

    Abstract: No abstract text available
    Text: - 00000.0000.0000.0000.0000-QDRII+_RL20 R1QGA36*CB* / R1QKA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG


    Original     		PDF 0000--QDRII+ R1QGA36* R1QKA36* R1QAA3636CBG R1QAA3618CBG R1QAA3609CBG R1QDA3636CBG R1QDA3618CBG R1QDA3609CBG R1QGA3636CBG

    A357

    Abstract: TC514400AP A374 SOJ26-P-30QA sa5 357
    Text: 1,048,576 W O R D PRELIMINARY >: 4 BIT D Y N A M IC R.AlV! D ESCRIPTION The TC514400AP/AJ/ASJ/AZ is the new generation dynam ic RAM organized 1,048,576 words by 4 bits. The TC514400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well


    OCR Scan     		PDF TC5I4400AP/AJ/ASJ/AZ TC514400AP/AJ/ASJ/AZ TC514400AP/AJ/ASJ/AZ. a512KX4 TC514400AP/A J/AZ-70, TC514400AP/AJ/ASJ/AZ-80 TC514400AP/AJ/ASJ/AZ-10 A357 TC514400AP A374 SOJ26-P-30QA sa5 357

    Untitled

    Abstract: No abstract text available
    Text: 6 5 ,5 3 6 W O R D X 16 BIT DY NAM IC RAM * T his is advanced inform ation and specifica­ tions are subject to change w ithout notice. DESCRIPTION The TC511665J^. is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC511665J^ TC511665J/Z

    0312e

    Abstract: 3912E 4311H sc 12000 0411h A03-11SR SA431
    Text: Kingbright ] SIN G LE D IG IT N U M E R IC DISPLAYS Sx36 Sx03 Sx39 Sx04 Sx43 Sx05 M P art No. C om m on Anode C om m on C athode S A 03-11HW A S C 03-12H W A SA03-11EW A SC 03-12E W A Package Description 0.3 inch 7mm Em itting C olor+ M aterial W avelength


    OCR Scan     		PDF 03-11HW SA03-11EW A03-11G 03-11YWA A03-11SR 03-12H 03-12E 03-12G 03-12Y 03-12S 0312e 3912E 4311H sc 12000 0411h SA431

    512kx4

    Abstract: SOJ26-P-350 1024X1024X4
    Text: 4400AP/AJ/ASJ/AZ-80 j g g g g P/AJ/ASJ/AZ-10 m Ë È Mm ê s M S ii* ® S m PRELIMINARY 1,048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The TC514400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well


    OCR Scan     		PDF 4400AP/AJ/ASJ/AZ-80 P/AJ/ASJ/AZ-10 TC514400AP/AJ/ASJ/AZ 300/350mil) 512KX4 TC514400AP/AJ/ASJ/AZ-- TC514400AP/AJ/ASJ/AZ-80 TC514400AP/AJ/ASJ/AZ-10 SOJ26-P-350 1024X1024X4

    TDA3616T

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS BITÂ syiiT TDA3616 Multiple voltage regulator with battery detection Objective specification File under Integrated Circuits, IC01 Philips Sem iconductors 1998 Jul 22 PHILIPS Philips Semiconductors Objective specification Multiple voltage regulator with battery


    OCR Scan     		PDF TDA3616 TDA3616T

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

    BR47

    Abstract: A751 a1r8 A910 BR33 A3R6 br27 BR56 br75
    Text: ★QPL * ER Series MiL-c-39010 Established Reliability Inductors Physical Parameters and Environmental Characteristics 1 E R 1641 I1 h/iil -c 39010/01 MIL-C39010/02 Inductance Range, |jH .10 to .82 .91 to 12.0 15 to 1000 Core Material Phenolic Iron Ferrite


    OCR Scan     		PDF MiL-c-39010 c39010/01 MIL-C39010/02 MIL-C39010/03 MIL-C39010/05 ER1025-36* ER1025-37* ER1025-38* ER1025-39* ER1025-40* BR47 A751 a1r8 A910 BR33 A3R6 br27 BR56 br75

    car ignition circuit diagram

    Abstract: DBS17P TDA3618JR car ignition circuit diagram engine
    Text: P hilips S em ico n d uctors P relim inary sp ecification Multiple voltage regulator with switch and ignition buffers TDA3618JR FEATURES • Load dum p protection G eneral • F oldback current lim it protection for regulators 1, 2 and 3 E xtrem ely low noise behaviour and good sta b ility with


    OCR Scan     		PDF TDA3618JR car ignition circuit diagram DBS17P TDA3618JR car ignition circuit diagram engine

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    7A07

    Abstract: w9109 jcs5 tc511665
    Text: 65,5 3 6 W O RD X 1 6 BIT D Y N A M I C R A M T his is advanced information and specifica­ tions are subject to change without notice. * D ES CR IP TION The T C 5 1 1 6 6 5 J^ . is the new generation dynamic RAM organized 65,536 words by 16 bits. The T C 511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF 511665J/Z TC511665J/Z 7A07 w9109 jcs5 tc511665

    M38DC

    Abstract: SMTO-8 SFD25 6884-700
    Text: THIN FILM PRODUCTS SELECTION GUIDE Topical Specifications 10 TO 250 MHz • LOW NOISE • HIGH DYNAMIC RANGE • HIGH EFFICIENCY ^^ A70-2 10-250 ^ 70 65 60 08 1.0 ^ ^ ^ 2.2 27 3.2 19.0 ^ 7íí 18.0 17.5 2 ^ 35 2.1 ^ 2.3 15 11 * * M M I 25 TQ-8/SMT0-8 2.0


    OCR Scan     		PDF A70-2 A80-1 A81-1 M38DC 1-800-WJ1-4401 SMTO-8 SFD25 6884-700

    TC514260B

    Abstract: tc514273 TC514260BJ
    Text: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC514260BJ/BFT-70/80 TC514260BJ/BFT TC514273BJ TC514260BJ/BFT-70/ TC514260B tc514273 TC514260BJ

    BR47

    Abstract: 53742
    Text: ►►►MIL-C-39010 Established Reliability Inductors Physical Parameters and Environmental Characteristics ER 1641 1 MIL-C39010/01 MIL-C39010/02 MIL-C39010/03 Inductance Range, pH 10 to .82 Core Material Phenolic Iron Ferrite Iron Iron Ferrite .410 ±.020


    OCR Scan     		PDF MIL-C-39010 MIL-C39010/01 MIL-C39010/02 MIL-C39010/03 MIL-C39010/04 BR47 53742

    a872 TRANSISTOR equivalent

    Abstract: WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F
    Text: Application Information for Thin Film Cascadable Amplifiers INSIDE THE TO-8 AMPLIFIER: BASIC CIRCUIT CONCEPTS This discussion covers the basic circuit concept behind the cascadable amplifier and details some of the techniques that are used to maintain hardware stability in the


    OCR Scan     		PDF HP340B a872 TRANSISTOR equivalent WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F