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    IC DATE CODE Search Results

    IC DATE CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC DATE CODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Traceability

    Abstract: No abstract text available
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN-07/004 Optional extension of Date Code Marking on standard IC-packages TYPE OF CHANGE: • Optional extension of Date Code D/C Marking on standard IC-packages current D/C: YYWW future D/C: YYWWss YY = year WW = week


    Original     		PCN-07/004 Traceability PDF

    BTN5551N3

    Abstract: BTP5401N3
    Text: Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401N3 Description • The BTP5401N3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A


    Original     		C307N3 BTP5401N3 BTP5401N3 -150V BTN5551N3. OT-23 UL94V-0 BTN5551N3 PDF

    TRANSISTOR n5401 b

    Abstract: n5401 n5401 transistor C307A3 BTN5551A3 BTP5401A3 TRANSISTOR n5401 3n5401
    Text: Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description • The BTP5401A3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A


    Original     		C307A3 BTP5401A3 BTP5401A3 -150V BTN5551A3. UL94V-0 TRANSISTOR n5401 b n5401 n5401 transistor C307A3 BTN5551A3 TRANSISTOR n5401 3n5401 PDF

    D2150

    Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
    Text: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA


    Original     		C848A3 BTD2150A3 100mA BTB1424A3 UL94V-0 D2150 NPN transistor ECB TO-92 PT10m BTD2150A3 PDF

    D2150

    Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
    Text: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA


    Original     		C848A3 BTD2150A3 100mA BTB1424A3 UL94V-0 D2150 D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A PDF

    SOT89 transistor marking 5A

    Abstract: BTC5103M3 MARKING 5A SOT-89
    Text: CYStech Electronics Corp. Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor BTC5103M3 Features • High IC, IC DC =5A • Low VCE(sat), 0.3V typically • Good current gain linearity Symbol Outline BTC5103M3


    Original     		C651M3 BTC5103M3 OT-89 UL94V-0 SOT89 transistor marking 5A BTC5103M3 MARKING 5A SOT-89 PDF

    b772 p

    Abstract: TRANSISTOR b772 p complementary b772 H B772 TO-251 B772 BTD8 b772 B772 SPECIFICATION TRANSISTOR b772 B772 TRANSISTOR
    Text: CYStech Electronics Corp. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772I3 BVCEO IC RCESAT -30V -3A 150mΩ Features • Low VCE sat ,typically -0.3 V at IC / IB = -2A / -0.2A


    Original     		C817I3-H BTB772I3 BTD882I3 O-251 Pw350s UL94V-0 b772 p TRANSISTOR b772 p complementary b772 H B772 TO-251 B772 BTD8 b772 B772 SPECIFICATION TRANSISTOR b772 B772 TRANSISTOR PDF

    C5103

    Abstract: transistor C5103 semiconductor C5103 e semiconductor C5103 k c5103 C5103 e C5103 Transistor BTA1952I3 BTC5103 BTC5103I3
    Text: CYStech Electronics Corp. High Speed Switching Transistor BVCEO IC RCESAT BTC5103I3 Features Spec. No. : C651I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 1/5 60V 5A 110mΩ • Low VCE sat , VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A


    Original     		BTC5103I3 C651I3 BTA1952I3 O-251 UL94V-0 C5103 transistor C5103 semiconductor C5103 e semiconductor C5103 k c5103 C5103 e C5103 Transistor BTA1952I3 BTC5103 BTC5103I3 PDF

    A1952

    Abstract: transistor A1952 MARKING A1952 BTA1952I3 a1952 transistor C601I3 transistor BTC5103I3
    Text: Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952I3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE sat , VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A


    Original     		C601I3 BTA1952I3 -100V BTC5103I3 O-251 UL94V-0 A1952 transistor A1952 MARKING A1952 BTA1952I3 a1952 transistor C601I3 transistor BTC5103I3 PDF

    D882 TRANSISTOR PIN

    Abstract: D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A


    Original     		BTD882I3 C848I3-H BTB772I3 O-251 Pw350s UL94V-0 D882 TRANSISTOR PIN D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet PDF

    transistor A1952

    Abstract: A1952 MARKING A1952 a1952 transistor A1952 R Q BTA1952J3 BTC5103J3
    Text: Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952J3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE sat , VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A


    Original     		C601J3 BTA1952J3 -100V BTC5103J3 O-252 UL94V-0 transistor A1952 A1952 MARKING A1952 a1952 transistor A1952 R Q BTA1952J3 BTC5103J3 PDF

    A1640 pnp

    Abstract: transistor a1640 A1640 bta1640j3
    Text: Spec. No. : C657J3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640J3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE sat = -0.4V(max) @ IC = -3A, IB=-0.15A


    Original     		C657J3 BTA1640J3 O-252 UL94V-0 A1640 pnp transistor a1640 A1640 bta1640j3 PDF

    D882 TRANSISTOR PIN

    Abstract: D882 SPECIFICATION D882 TRANSISTOR TO 252 D882 D882 252 d882 J D882 d882 to252 transistor "D882 p" d882 power transistor
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC RCESAT Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 1/7 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A


    Original     		BTD882J3 C848J3-H BTB772J3 O-252 Pw350us UL94V-0 D882 TRANSISTOR PIN D882 SPECIFICATION D882 TRANSISTOR TO 252 D882 D882 252 d882 J D882 d882 to252 transistor "D882 p" d882 power transistor PDF

    BTB1260M3

    Abstract: BTD5213M3
    Text: CYStech Electronics Corp. Spec. No. : C310M3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/3 NPN Epitaxial Planar Transistor BTD5213M3 Features • High VCEO, VCEO=80V • High IC, IC DC =1A • Low VCE(sat) • Good current gain linearity • Complementary to BTB1260M3


    Original     		C310M3 BTD5213M3 BTB1260M3 OT-89 UL94V-0 BTB1260M3 BTD5213M3 PDF

    d1760

    Abstract: TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC RCESAT Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A


    Original     		BTD1760J3 C848J3 BTB1184J3 O-252 UL94V-0 d1760 TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760 PDF

    Transistor B1205

    Abstract: c815 btb18 B1205 BTB1205I3
    Text: CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1205I3 BVCEO IC RCESAT Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6 -20V -5A 127mΩ typ. Features • Low VCE sat , VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA


    Original     		BTB1205I3 C815I3 -60mA BTB1805I3 O-251 UL94V-0 Transistor B1205 c815 btb18 B1205 BTB1205I3 PDF

    transistor b1412

    Abstract: b1412 BTB1412J3 B14-12 to252 footprint wave soldering BTD2118J3
    Text: Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BVCEO IC RCESAT BTB1412J3 -30V -5A 75mΩ typ. Features • Low VCE sat , VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A


    Original     		C816J3 BTB1412J3 BTD2118J3 O-252 UL94V-0 transistor b1412 b1412 BTB1412J3 B14-12 to252 footprint wave soldering BTD2118J3 PDF

    murata REEL label lot number

    Abstract: No abstract text available
    Text: PREPARED BY: DATE SPEC NO. FILE No. ISSUE CHECKED BY: DATE ELECTRONIC COMPOMENTS AND DEVICES GROUP APPROVED BY: DATE PAGE Dec. 4, 2012 1/22 REPRESENTATIVE DIVISION U SHARP CORPORATION SPECIFICATION SYSTEM DEVICE DIVISION DEVICE SPECIFICATION FOR 5GHz Wireless LAN Front-End IC


    Original     		QM2A1UB029 QM2A1UB029/EL/ murata REEL label lot number PDF

    Untitled

    Abstract: No abstract text available
    Text: PREPARED BY: Reference DATE SPEC NO. FILE No. CHECKED BY: ELECTRONIC COMPOMENTS DATE AND DEVICES GROUP APPROVED BY: ISSUE Mar. 28, 2013 PAGE 1/22 REPRESENTATIVE DIVISION SHARP CORPORATION DATE SPECIFICATION SYSTEM DEVICE DIVISION DEVICE SPECIFICATION FOR 2.4GHz Wireless LAN Front-End IC


    Original     		QM2A1UB032A QM2A1UB032A/EL/ PDF

    murata REEL label lot number

    Abstract: No abstract text available
    Text: Reference PREPARED BY: SPEC NO. DATE FILE No. CHECKED BY: DATE ELECTRONIC COMPOMENTS AND DEVICES GROUP APPROVED BY: DATE ISSUE Mar. 28, 2013 PAGE 1/22 REPRESENTATIVE DIVISION SHARP CORPORATION SPECIFICATION SYSTEM DEVICE DIVISION DEVICE SPECIFICATION FOR 5GHz Wireless LAN Front-End IC


    Original     		QM2A1UB033A QM2A1UB033A/EL/ murata REEL label lot number PDF

    murata REEL label lot number

    Abstract: No abstract text available
    Text: PREPARED BY: DATE Reference SPEC NO. FILE No. ISSUE CHECKED BY: DATE ELECTRONIC COMPOMENTS AND DEVICES GROUP APPROVED BY: DATE PAGE Dec. 4, 2012 1/22 REPRESENTATIVE DIVISION SHARP CORPORATION SPECIFICATION SYSTEM DEVICE DIVISION DEVICE SPECIFICATION FOR 2.4GHz Wireless LAN Front-End IC


    Original     		QM2A1UB028 QM2A1UB028/EL/ murata REEL label lot number PDF

    ZLP32300

    Abstract: IC R249
    Text: Product Update Errata for ZLP32300 Engineering Sample AB Silicon UP007103-0707 Applicable Silicon Revision The errata listed in Table 1 is found in the Revision AB silicon for the ZLP32300 product. This errata sheet is only applicable on date code 0437 or the date before it. Any IC with a later date code does not have this


    Original     		ZLP32300 UP007103-0707 ZLP32300 IC R249 PDF

    H31002P

    Abstract: ic2005 h31002 H1N4004 H1N4148 HMBZ5230B HMBZ5235B
    Text: HI-SINCERITY Spec. No. : IC200501 Issued Date : 2005.03.01 Revised Date : 2005.03.25 Page No. : 1/5 MICROELECTRONICS CORP. H31002P BIPOLAR TONE RINGER IC Description 8-Lead Plastic DIP-8 Package Code: P The H31002P is a bipolar integrated circuit. It is designed for telephone bell replacement. It


    Original     		IC200501 H31002P H31002P 200oC 183oC 217oC 260oC 245oC ic2005 h31002 H1N4004 H1N4148 HMBZ5230B HMBZ5235B PDF

    SHARP LCD MATRIX LM16X21A

    Abstract: LM16X21A 14 pin DOT MATRIX LM16X21A LM16*21A lm16x2 LM16*21 LM16X sharp lm16x21a VU meter with LCD lm16x21a TYPE549
    Text: PREPARED APPROVED BY : BY : DATE SHARP DATE ELECTR O N IC SHARP COM PONENTS CROUP SP E C N o. FILE No . LC634 08 ISSU E Apr. PACE 16 SPECIFICATION O lV SIO N D IC a SEM ICO N D U CTO R DIV. • LCD Q A P P L IC A T IO N DIV. ELE C TR O N IC 01V’ COM PONENTS


    OCR Scan     		LC634 16-character/2-line LM16X21A LM16X21A xxxxl101 SHARP LCD MATRIX LM16X21A 14 pin DOT MATRIX LM16X21A LM16*21A lm16x2 LM16*21 LM16X sharp lm16x21a VU meter with LCD lm16x21a TYPE549 PDF