JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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471-1 METAL
Abstract: No abstract text available
Text: SEMELAB NEW PRODUCT LM 7800-220M SERIES POSITIVE VOLTAGE REGULATOR TO 220 METAL MECHANICAL DATA Dimensions in mm FEATURES • HERMETIC TO 220 METAL PACKAGE It • HIGH RELIABILTY • ISOLATED OPTION • MILITARY OPTION • SCREENING OPTIONS f- P I N 1 - ln p u t
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7800-220M
T0220M
T0220--
LM78XX
471-1 METAL
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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Untitled
Abstract: No abstract text available
Text: MLX90360 Triaxis Position Sensor IC Features and Benefits Triaxis Hall Technology On Chip Signal Processing for Robust Absolute Position Sensing Simple Magnetic Design Programmable Measurement Range Programmable Linear Transfer Characteristic Multi-points or Piece-Wise-Linear
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MLX90360
TSSOP-16
ISO14001
Dec/13
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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BFC41
Abstract: No abstract text available
Text: mi BFC41 SEME LAB 4TH GENERATION MOSFET T 0 2 4 7 -A D Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS U Terminal 1 Terminal 3 2 21 IQ 087) 2 59 (0 102) Gate Source L _ . 10 5 (0 4 3 0 ) BSC Terminal 2
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BFC41
T0247-AD
MIL-STD-750
BFC41
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sml40g100an
Abstract: PIC204
Text: SEMELAB PLC = ^ bDE P • 6133157 00006^5 = M O S r a s a SEME SflLB_ P O W E R 4 'T - Z ° t - Z ì IG B T SML40G100AN LAB TTT ■ 1000V 40A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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SML40G100AN
SML40G1he
sml40g100an
PIC204
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Untitled
Abstract: No abstract text available
Text: - 01 331 07 ODGObfib m b bOE D SENELAB PLC •SHLB '"T'3iì*3>l =^i SEME MOS POWER 4 IGBT LAB SML50G60BN SML50G50BN 600V 500V 50A 50A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter Collector-Emitter Voltage
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SML50G60BN
SML50G50BN
SML50G60/50G50BN
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N4020A
Abstract: 3525AN sml4020an sml4025an sml3520an
Text: SEM ELAB PLC fll3 3 1 fl7 LOE D IM I i^ = G0GD7M2 D7S ISMLB MOS POW ER d T ^ -v s SEME SML4020AN SML3520AN SML4025AN SML3525AN LAB 400V 350V 400V 350V 22.5A 22.5A 20.0A 20.0A 0.20Q 0.20Q 0.25Q 0.25Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tc = 25°C unless otherw ise specified.
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SML4020AN
SML3520AN
SML4025AN
SML3525AN
-SML402
y4025AN
N4020A
3525AN
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Untitled
Abstract: No abstract text available
Text: mi BFC50 SEME LAB 4TH GENERATION MOSFET T 0 2 4 7 - A D P a cka g e O u tlin e. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Vpss ^D(cont) ^DS(on) 500V 23.0A 0.250 BSC Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS
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BFC50
A1331S7
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6040BN
Abstract: sml5540bn
Text: _ SEMELAB = ^ bOE PLC 0133107 D ODOObHß b02 • S I1LB MOS POWER 4 = SML6040BN SML5540BN SML6045BN SML5545BN SEM E LAB 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.4012 0.4012 0.4512 0.4512 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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SML6040BN
SML5540BN
SML6045BN
SML5545BN
5540BN
6040BN
5545BN
6045BN
O-247AD
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Untitled
Abstract: No abstract text available
Text: mi itF i IMI SEME BFC13 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 4 1 (0 1 6 1 ) 4 3 (0 1 6 9 ) I ' 4 0 (0 1 5 7 ) 4 2 ( 0 .1 6 5 ) VDSS I ! 3 3 ( 0 1 2 9) 3 6 ( 0 1 4 3)
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BFC13
OT-227
MIL-STD-750
000152fi
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SML1001R1BN
Abstract: APT901R1BN 1001R1BN SML1001R3BN SML901R1BN SML901R3BN APT901R
Text: SEMELAB t>OE PLC - 01 3 3 1 0 7 O O O O b ü O 73S « S m B D MOS POWER 4 SML1001R1BN 1000V 10.5A 1.1 OQ SML901R1BN 900V 10.5A 1.1 OQ SML1001R3BN 1000V 10.0A 1.3012 SML901R3BN 900V 10.0A 1.3012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML1001R1BN
SML901R1BN
SML1001R3BN
SML901R3BN
901R1BN
1001R1
901R3BN
1001R3BN
O-247AD
APT901R1BN
1001R1BN
APT901R
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L601R
Abstract: sml551r3gn
Text: SEHELAB PLC bQE D Ò Ì33107 INI 0000542 T Sb • S M L B 4 MOS POWER 1 FFË T -3 ° i-'3 SML601R3GN SML551R3GN SML601R6GN SML551R6GN SEME LAB 600V 550V 600V 550V 5.5A 5.5A 5.0A 5.0A 1.30ft 1.30ft 1.60ft 1.60ft N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML601R3GN
SML551R3GN
SML601R6GN
SML551R6GN
551R3GN
601R3GN
551R6GN
601R6GN
O-257AA
L601R
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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TTK SG 2368
Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Text: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A
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AP-55A
PR00UCT.
MCS-48
/TP-11/1179/5K
TTK SG 2368
BV EI 303 3628
7 segment LD 1106 BS
LM 6863 D
I8253
yx 8018 0308
082c ez 422
BV EI 304 3083
0429 01 2701 00 RELE
12,8 mhz e 4895 lf
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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Untitled
Abstract: No abstract text available
Text: -P P - IP140A IP140 IP7800A IP7800 LM140 = ll7i= SEME I Â Q L M D SERIES SERIES SERIES SERIES SERIES 1 AMP POSITIVE VOLTAGE REGULATOR FEATURES Pin 1 - V|N Pin 2 - V qut Case - Ground K Package - TO-3 Pin 1 - V|N Pin 2 - Vqut Case - Ground R Package - TO-66
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IP140A
IP140
IP7800A
IP7800
LM140
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Untitled
Abstract: No abstract text available
Text: h a - 5 1 5 2 /8 8 3 ffl h a r r is Dual, Low Power O perational Amplifier January 1989 Features D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td 883 and Is Fully Conform ant U nder the Provisions of Paragraph 1.2.1. The H A -5152/883 dual operational am plifier is part of a
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100Hz
200mV
-200m
1250C
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TFK U 3212 M
Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Text: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro electro n ic G m bH K ruppstrasse 6
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212-152
Abstract: NS6W183A NF2W757AR-V1
Text: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2013-1 2013-1 Contents ［ 目 次 ］ 084 ･････････････････････････････････････････････････
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Untitled
Abstract: No abstract text available
Text: in te i EXTENDED TEMPERATURE 28F016SA 16 MBIT 1 MBIT x 16, 2 MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Operation 40°C to + 85°C User-Selectable 3.3V or 5V VCc 100 ns Maximum Access Time at 5V (Extended Temperature Range) 1 Million Typical Erase Cycles per
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28F016SA
56-Lead
28F008SA
28Fced
28F0008SA
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