IRAMS10UP60A
Abstract: IRAMS10UP60APBF marking R1E AN-1044 AN-1049 IR21365 ntc 12k
Text: PD-94640 RevG IRAMS10UP60APbF www.irf.com 1 RevG,.100507 IRAMS10UP60APbF Internal Electrical Schematic - IRAMS10UP60APbF V+ 10 VRU (12) VRV (13) VRW (14) Rg1 Rg3 Rg5 VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
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PD-94640
IRAMS10UP60APbF
027-E2D24
AN-1049
IRAMS10UP60A
IRAMS10UP60APBF
marking R1E
AN-1044
AN-1049
IR21365
ntc 12k
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Untitled
Abstract: No abstract text available
Text: PD-94640 RevG IRAMS10UP60APbF www.irf.com 1 RevG,.100507 I RAMS10UP60APbF I nternal Electrical Schematic - I RAMS10UP60APbF V+ 10 VRU (12) VRV (13) VRW (14) Rg1 Rg3 Rg5 VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
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PD-94640
IRAMS10UP60APbF
RAMS10UP60APbF
027-E2D24
AN-1049
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JIS-Z-3282
Abstract: JISZ3282 surge absorber
Text: No. P-KVA-002 DATE 2008-10 PRODUCTS DATA SHEET ESD protection SURGE ABSORBER Type KVA LEAD FREE Size 1005, 1608 OUTLINE The signal transmission rate of personal computer peripheral devices and digital devices as represented by USB2.0 devices is being increased year by year, and countermeasures against ESD are critical in high-frequency bands. We have developed Type KVA
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P-KVA-002
JIS-Z-3282
JISZ3282
surge absorber
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WW04
Abstract: WW04P
Text: WW04P ±1%, ±5% Low ohm power chip resistors Size 0402 1005 Page 1 of 6 WW04P_V01 Mar.2011 FEATURE 1. High power rating and compact size 2. High reliability and stability 3. Reduced size of final equipment 4. Lead free product is upon customer requested.
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WW04P
1000hours
WW04
WW04P
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ASC_WW04P
Abstract: No abstract text available
Text: Approval sheet WW04P ±1%, ±5% Low ohm power chip resistors Size 0402 1005 *Contents in this sheet are subject to change without prior notice. Page 1 of 6 ASC_WW04P_V01 Mar.2011 Approval sheet FEATURE 1. High power rating and compact size 2. High reliability and stability
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WW04P
1000hours
ASC_WW04P
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Untitled
Abstract: No abstract text available
Text: POE International Corp SPECIFICATION OF LOW OHMIC CHIP RESISTOR M01-00-E-07 Ver: 1 Page: 1 of 7 ROHS compliance WW04X ±1%, ±5% Low ohmic chip resistors Size 0402 1005 Customer : Approval No : Issue Date : Customer Approval : POE International Corp SPECIFICATION OF LOW OHMIC CHIP RESISTOR
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M01-00-E-07
WW04X
500grams
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WW04
Abstract: No abstract text available
Text: POE International Corp SPECIFICATION OF LOW OHMIC POWER CHIP RESISTOR M01-00-E-07 Ver: 1 Page: 1 of 7 ROHS compliance WW04P ±1%, ±5% Low ohmic power chip resistors Size 0402 1005 Customer : Approval No : Issue Date : Customer Approval : POE International Corp
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M01-00-E-07
WW04P
500grams
WW04X
WW04
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Untitled
Abstract: No abstract text available
Text: Current Transducer LT 1005-S/SP30 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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1005-S/SP30
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Untitled
Abstract: No abstract text available
Text: Current Transducer LT 1005-S/SP18 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16256 Electrical data IPN IP RM
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1005-S/SP18
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Abstract: No abstract text available
Text: IPN Current Transducer LT 1005-S/SP19 = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16109 Electrical data IPN IP RM
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1005-S/SP19
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Abstract: No abstract text available
Text: IPN Current Transducer LT 1005-S/SP29 = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16205 Electrical data I PN IP
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1005-S/SP29
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Abstract: No abstract text available
Text: Current Transducer LT 1005-S/SP28 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16135 Electrical data IPN IP RM
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1005-S/SP28
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SOT-363 marking 7a
Abstract: sot363 marking 02 SOT-363 marking 22 SOT-363 marking 187 SOT363 marking 49 marking 7A 7L Marking MUN5235DW1T1 marking 7k sot363 MUN5237DW1T1
Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5211DW1T1
SOT-363 marking 7a
sot363 marking 02
SOT-363 marking 22
SOT-363 marking 187
SOT363 marking 49
marking 7A
7L Marking
MUN5235DW1T1
marking 7k sot363
MUN5237DW1T1
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Untitled
Abstract: No abstract text available
Text: Chip Attenuator Chip Attenuator 0404 Type: EXB24AT • Features ● Unbalanced ȏ type attenuator circuit in one chip 1.0 mm ҂ 1.0 mm ● Mounting area reduced : about 50 % reduction compared with an attenuator circuit consisting of three 1005 (inches:0402) chip resistors (almost equal to an attenuator circuit consisting of three 0603 (inches:0201) chip
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EXB24AT
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Untitled
Abstract: No abstract text available
Text: Chip Attenuator Chip Attenuator 0404 Type: EXB24AT • Features ● Unbalanced ȏ type attenuator circuit in one chip 1.0 mm ҂ 1.0 mm ● Mounting area reduced : about 50 % reduction compared with an attenuator circuit consisting of three 1005 (inches:0402) chip resistors (almost equal to an attenuator circuit consisting of three 0603 (inches:0201) chip
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EXB24AT
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CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126/D
CBF493S
BC337 hie hre hfe
BC449 equivalent
transistor marking code SOT-23 2FX
marking 513 SOD-323
bc213 equivalent
MECL 10000
bc237c equivalent
diode Marking code jv3 f
BAV70 SOT-23 JJ
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marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126/D
marking 513 SOD-323
transistor marking code SOT-23 2FX
BC449 equivalent
DTD113
BC548 hie hre hfe steel package
MPSW45A replacement
BC449A equivalent
2n4401 free transistor equivalent book
power tmos
BF256
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TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126
TRANSISTOR AH-16
TRANSISTOR bH-16
equivalent of transistor bc212 bc 214
transistor marking code SOT-23 2FX
2907A PNP bipolar transistors
SILICON TRANSISTOR FS 2025
marking JV SOD323
bf245 replacement
GI 312 diode
msd601
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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PU10015EJ04V0PF
transistor marking T79 ghz
marking code C1H mmic
marking code C3E SOT-89
upb1507
marking code C1G mmic
marking code C1E mmic
data book transistors 2SA
uPC2712
pc3215
transistor 2SA data book
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5252 F 1108
Abstract: 5252 F 1008 5252 F 1004
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
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2SC5615
S21e2
2SC5615
2SC5615-T3
5252 F 1108
5252 F 1008
5252 F 1004
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SO930R
Abstract: BCF81R dxdz SO5401R SO1893 bcf81 ET 3005 BCW66R 3n08 BCW72R
Text: y g en eral purpose transistors transistors usage général THOMSON-CSF Types M axim um Characteristics at 25°C ratings NPN PN P p tot V C EO h21E @ •c VCE(sat) @ Ic/'B *T C22b min IMHz) max (pF) ^CER* min max max f B ‘ off 1 kHz max nax Marking* Pin out
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BCW31IR)
54001R)
SO930R
BCF81R
dxdz
SO5401R
SO1893
bcf81
ET 3005
BCW66R
3n08
BCW72R
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ELJPA100K
Abstract: IC ti 072 330KF panasonic Choke Coils CTV 3225 Panasonic Choke Coil
Text: Panasonic Chip Inductors Chip Inductors Mg & S e r ie s : C h ip Type: RF, RE, ND, NC, NA, FC, FA, SA, FB, PC, PA, RF RE ND me QA FB Size 1005 (Size 1608) (Size 2012) (Size 2520) (Size 3225) (Size 4532) Non w in d in g (RF, RE) and w ire w o u n d ty p e c h ip in
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T 5L C 1005 256K X 4 SRAM |V|IC=RON 256Kx 4 SRAM SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 15,1 7 , 20, 25, 35 and 45ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply
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256Kx
28-Pin
T5LC1005
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Untitled
Abstract: No abstract text available
Text: INFORMATION NEC NEC SEMICONDUCTOR DEVICE RELIABILITY/QUALITY CONTROL SYSTEM MICROCOMPUTER LSI MEMORY 1C GATE ARRAY LOGIC LSI The inform ation in th is docum ent is subject to ch ange w ith o u t notice. Document No. C10983EJ3V0IFU1 189 1. B A S IC P R IN C IP L E S
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C10983EJ3V0IFU1
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