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    IC MARKING 54C Search Results

    IC MARKING 54C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC MARKING 54C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT89 transistor marking

    Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
    Text: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications


    Original     		PDF OT-563 OT-523 OT-23 OT-89 OT-223 OT-228 600mA 500mA CMLT5551HC OT-563) SOT89 transistor marking SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter

    CMUT5401

    Abstract: No abstract text available
    Text: Central TM Semiconductor Corp. CMUT5401 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.


    Original     		PDF CMUT5401 OT-523 100MHz 28-October CMUT5401

    Untitled

    Abstract: No abstract text available
    Text: CMUT5401 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier


    Original     		PDF CMUT5401 OT-523 100MHz

    CMUT5401

    Abstract: IC MARKING 54C
    Text: CMUT5401 Central TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high


    Original     		PDF CMUT5401 OT-523 100MHz 29-May CMUT5401 IC MARKING 54C

    CMUT5401

    Abstract: No abstract text available
    Text: CMUT5401 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier


    Original     		PDF CMUT5401 OT-523 100MHz CMUT5401

    Untitled

    Abstract: No abstract text available
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDX53B, BDX53C BDX54B, BDX54C BDX53C, O-220AB BDX53B BDX54B

    diac kr 206

    Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
    Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com


    Original     		PDF element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE

    BOX 53C IC

    Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		PDF BDX53B, BDX53C BDX54B, BDX54C BDX53B/D BOX 53C IC BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B

    Untitled

    Abstract: No abstract text available
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		PDF BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D

    box 53c

    Abstract: BDX53BG 100 amp npn darlington power transistors AMP contact assembly bdx53cg 5 amp npn darlington power transistors 500 watts amplifier box 53c IC 1N5825 BDX53B
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features •ăHigh DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		PDF BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D box 53c BDX53BG 100 amp npn darlington power transistors AMP contact assembly bdx53cg 5 amp npn darlington power transistors 500 watts amplifier box 53c IC 1N5825 BDX53B

    pin orientation for bdx53c transistor

    Abstract: box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		PDF BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D pin orientation for bdx53c transistor box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100

    GM5WA06270A

    Abstract: PT202MR0MP1 GM1WA55360A GM4BC13300AC GM4JV81200AE GM5WA05260A GM5WA05360A GM5WA06250A GM5WA06260A ISO100
    Text: Chip LEDs for Mobile Products Mobile Phone Digital Still Camera PDA SHARP High Luminosity Chip LEDs add live colors to Mobile Products In the application of mobile products, Light Emitting Diode LED is widely used for the back light or the indicator, taking advantage of


    Original     		PDF FT001K GM5WA06270A PT202MR0MP1 GM1WA55360A GM4BC13300AC GM4JV81200AE GM5WA05260A GM5WA05360A GM5WA06250A GM5WA06260A ISO100

    TLE4954C-E2

    Abstract: TLE4954
    Text: TLE4954C/51C Differential Hall Effect Transmission Speed Sensors TLE4954C TLE4954C-E1 TLE4954C-E2 TLE4954C-E4 TLE4954CB TLE4954CB-E1 TLE4954CB-E2 TLE4951C TLE4951CB Product Information 2013-10-15 Sense & Control TLE4954C/51C Table of Contents Table of Contents


    Original     		PDF TLE4954C/51C TLE4954C TLE4954C-E1 TLE4954C-E2 TLE4954C-E4 TLE4954CB TLE4954CB-E1 TLE4954CB-E2 TLE4951C TLE4951CB TLE4954C-E2 TLE4954

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: XC6127 Series ETR0217-005 Ultra Small Voltage Detector with High Precision Delay Circuit and Manual Reset Function •GENERAL DESCRIPTION XC6127 series is ultra small highly accurate voltage detector with delay circuit built-in. The device includes a highly accurate reference voltage source, manufactured using CMOS process technology and laser


    Original     		PDF XC6127 ETR0217-005 800ms.

    XC6127

    Abstract: XC6127N XC6127C 433k u XC6127N15A
    Text: XC6127 Series ETR0217-007 Ultra Small Voltage Detector with High Precision Delay Circuit and Manual Reset Function •GENERAL DESCRIPTION XC6127 series is ultra small highly accurate voltage detector with delay circuit built-in. The device includes a highly accurate reference voltage source, manufactured using CMOS process technology and laser


    Original     		PDF XC6127 ETR0217-007 800ms. XC6127N XC6127C 433k u XC6127N15A

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V ITELIC V 54C31732G 2V H IG H P ER FO R M A N C E 166/143 M H z 3.3 VOLT EN HA N CED G R A PHICS 512K X 32 S D R A M 2 BANKS X 256K bit X 32 V54C31732G2V P R E LIM IN A R Y -6 -7 -8 -10 Unit 166 143 125 100 MHz Latency 3 3 3 3 clocks Cycle Tim e tc«


    OCR Scan     		PDF 54C31732G V54C31732G2V V54C31732G2V 100-pin

    5A1 equivalent SMD

    Abstract: qml-38535 GDFP1-F48 9A248 marking 6a2 smd
    Text: REVISIONS DESCRIPTION LTR DATE APPROVED YR-MO-DA REV SHEET REV SHEET 15 REV STATUS OF SHEETS REV SHEET PM IC N/A STANDARD M ICRO CIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 1 2 3 4 5 PREPARED BY


    OCR Scan     		PDF 18-BIT 5962-E101-96 QML-38535. QML-38535 MIL-HDBK-103. MIL-HDBK-103 5A1 equivalent SMD GDFP1-F48 9A248 marking 6a2 smd

    4A60

    Abstract: A1Z P 73fo 3C70 73E0 1B80 5G10 din 5480 s170 D-10
    Text: MIL-M-38510/224 9 JUNE 1986 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 262,144 B IT , MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY EPROM MONOLITHIC SILICON T h is s p e c if ic a t io n i s approved fo r use by a l l Depart­ ments and Agencies of the Department o f Defense.


    OCR Scan     		PDF MIL-M-38510/224 MIL-M-38510, MIL-M-38510 MIL-M-38510. L-M-38510/224 704-036/4S467 4A60 A1Z P 73fo 3C70 73E0 1B80 5G10 din 5480 s170 D-10

    qml-38535

    Abstract: CQCC1-N20 GDFP2-F20
    Text: REVISIONS ! DESCRIPTION LTR DATE YR-MO-DA APPROVED j \ REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PM IC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 1 2


    OCR Scan     		PDF 5962-E284-96 QML-38535. QML-38535 MIL-HDBK-103. MIL-HDBK-103 CQCC1-N20 GDFP2-F20

    54C906

    Abstract: 54C906 similar ELITE EY MM54C906F
    Text: This Material Copyrighted By Its Respective Manufacturer r SCOPE 1.1 Scooe. .This drawing describes the requirements for monolithic s ilic o n , d ig it a l, CJIOS buffers This drawing provides for a level of m icro c irc u it q u ality and r e l i a b i lit y assurance for procurement


    OCR Scan     		PDF MIl-M-38510. 54C306 MIL-M-38510, 54C906 54C906 similar ELITE EY MM54C906F

    5962-9752701Q3A

    Abstract: qml-38535
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 5 4 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE


    OCR Scan     		PDF 10-BIT GG470Ã 5962-9752701Q3A qml-38535

    Untitled

    Abstract: No abstract text available
    Text: ThomasiBetts Barrier Strips Dual Barriers 0.4375" PITCH SERIES SSB7 Physical P roperties H ousing Material: Polypropylene Flammability: UL94V-2 C olor: Black T erminal T erminals: Brass, bright acid tin over copper plat­ ing S crew: Steel with zinc + chromate plating


    OCR Scan     		PDF UL94V-2

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A ^ |r p 2 1


    OCR Scan     		PDF 5962-E1355-5 5962-8970701EX CD54HCT162F/3A