power mosfet 100v 250w
Abstract: n-channel 250w power mosfet
Text: CONTROL IC THE POWER MANAGEMENT LEADER IR5001S Active ORing IC Makes Redundant Systems More Efficient IR ADVANTAGE • IC controller and driver in a single SO-8 package • Suitable for both input ORing and output ORing for redundant DC-DC and AC-DC power supplies
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IR5001S
130nS
IR5001S
10628FS
power mosfet 100v 250w
n-channel 250w power mosfet
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str3a100
Abstract: STR3A153 STR3A100D Television sanken sanken audio STR3A154D STR-3A155D str3a162 STR3A100D switching power supply
Text: Application Information STR3A100 Series PWM Off-Line Switching Regulator ICs General Description STR3A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low
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STR3A100
STR3A100-AN
STR3A153
STR3A100D
Television sanken
sanken audio
STR3A154D
STR-3A155D
str3a162
STR3A100D switching power supply
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IC 40110
Abstract: TPD1032F 40110
Text: TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly
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TPD1032F
TPD1032F
IC 40110
40110
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Untitled
Abstract: No abstract text available
Text: TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly
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TPD1032F
TPD1032F
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IC 40110
Abstract: TPD1032F
Text: TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly
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TPD1032F
TPD1032F
IC 40110
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HIGH POWER MOSFET TOSHIBA
Abstract: TPD1032F
Text: TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly
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TPD1032F
TPD1032F
HIGH POWER MOSFET TOSHIBA
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HAT1128R
Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
Text: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response
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RJK0305DPB
RJK0331DPB)
HAT2188WP
RJK2055DPA
RJK2057DPA
HAT2191WP
HAT2192WP
HAT2193WP
RJK2555DPA
RJK2557DPA
HAT1128R
RJJ0315DSP
HAT1125H
RJK0351DPA
RJK0380DPA
HAT2215R
hat1128
hat2215
HAT1054R
RJK0329DPB
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Untitled
Abstract: No abstract text available
Text: ► AN A LO G D E V IC E S +3 Volt, Serial Input Complete 12-Bit DAC AD8300 FEATURES Complete 12-Bit DAC No External Components Single +3 Volt Operation 0.5 m V/Bit with 2.0475 V Full Scale 6 .is Output Voltage Settling Time Low Power: 3.6 mW Compact SO-8 1.5 mm Height Package
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12-Bit
AD8300
AD8300
12-bit,
AD8300.
DAC8512
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Untitled
Abstract: No abstract text available
Text: JÜ0MERSÍ 7294621 § POWEREX "iß INC dF | aGoa?fl7 ^ ; T-39-13 JS010504 Tentative Single EXMOS MOSFET Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 40 Amperes/50 Volts Dimension A Inches .787 Millimeters 20 B .614 15.6 C .214 ± .0 0 8
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T-39-13
JS010504
Amperes/50
JS010504
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IR2110 IGBT DRIVER
Abstract: IGBT DRIVER SCHEMATIC 3 PHASE IR2110 MOSFET DRIVER 2132S ic 2125 8 pin IR2110 gate driver for mosfet ir2110 single mosfet 2130J IR2110 16 pin half bridge ir2110
Text: International SMIRectifier Power Integrated Circuits Control 1C Applications High Voltage Power MOSFET/IGBT Gate Drivers Features Half Bridge Drivers Single Drivers iti1MOSFET □ I U MOSFET IR IR — IGBT —* —I*- IGBT 1 1 Three Phase Drivers Three High and Three Low Side
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2130J
2130S
2132J
2132S
IR2110
IR2113
IR2155
IR2110 IGBT DRIVER
IGBT DRIVER SCHEMATIC 3 PHASE
IR2110 MOSFET DRIVER
ic 2125 8 pin
IR2110 gate driver for mosfet
ir2110 single mosfet
IR2110 16 pin
half bridge ir2110
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max4420
Abstract: No abstract text available
Text: 19-0039; RevO; 11/92 High-Speed, 6A Single M OSFET Drivers G e n e ra l D e s c rip tio n A 40ns delay tim e and a 25ns rise or fall tim e while driving 2500pF to 18V m inimize pow er losses during MOSFET sw itching transitions. The M AX4420/MAX4429/M XT429 interface easily with
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2500pF
AX4420/MAX4429/M
XT429
MAX4420/MAX4429,
MXT429.
MAX4420
AX4429
MXT429
MAX4420/MAX4429/MXT429
MXT429CPA
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ic driver mosfet 8 pin
Abstract: 14 pin ic 555 DRIVER MOSFET IR IGBT DRIVER SCHEMATIC 3 PHASE IR2132 igbt gate driver IR igbt gate driver ic IR2113 APPLICATIONS Mosfet driver IR2130 ir 2112 applications IGBT gate drivers
Text: International ^ R e c tifie r Pow er Integrated Circuits Control 1C Applications High Voltage Power MOSFET/IGBT Gate Drivers Features Single Drivers Half Bridge Drivers — IR —*• - -it! MOSFET “IQ IH MOSFET y — IR IGBT y —1^ IGBT — 1 1 Three Phase Drivers
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IR2130
2130J
2130S
IR2132
IR2132J
2132S
IR2110
IR2113
ic driver mosfet 8 pin
14 pin ic 555
DRIVER MOSFET IR
IGBT DRIVER SCHEMATIC 3 PHASE
IR2132 igbt gate driver
IR igbt gate driver ic
IR2113 APPLICATIONS
Mosfet driver IR2130
ir 2112 applications
IGBT gate drivers
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300 volt 5 ampere mosfet
Abstract: JS012502 13002 FL sr 13002
Text: 7294621 POWEREX INC ' Tfl DE 1 7 2 T 4 t i S l GG0277S E | JS012502 JS013002 fo m cn sr T" 39-13 Tentative Single EXMOS MOSFET Powerex, Inc., Hillls S treet, Youngwood, Pennsylvania 15697 412 925-7272 20 Amperes/250-300 Volts Description Dimension A Inches
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GG0277S
JS012502
JS013002
Amperes/250-300
GGD27flD
peres/250-300
300 volt 5 ampere mosfet
13002 FL
sr 13002
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MIC1427CM
Abstract: No abstract text available
Text: M IC 1 4 2 6 /1 4 2 7 / 1 4 2 8 1.2A Dual High-Speed MOSFET Drivers Bipolar/CMOS/DMOS Process General Description Features Low Cost Latch-Up Protected: Will Withstand 500mA Reverse Output Current ESD Protected. ±2kV
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500mA
10OOpF
MIC1427CM
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TL494
Abstract: SN 1428 tl494 motor IC1428
Text: M IC I 4 2 6 /1 4 2 7 /1 4 2 8 1.2A Dual High-Speed MOSFET Drivers Bipolar/CMOS/DMOS Process General Description Features The MIC1426/27/28 are a fam ily of 1.2A dual high-speed drivers. They are ideal for high-volum e OEM manufacturers, with latch-up protection, and ESD protection. BiCMOS/DM OS
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MIC1426/27/28
MIC1426
DS0026,
TL494
SN 1428
tl494 motor
IC1428
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EL7114CN
Abstract: el inverter Schematic EL7104C EL7104CN EL7104CS EL7114CS EL7114 MOSFET 4420 power mosfet drivers 7104C
Text: EL7104C/ EL7114C ìa n t e c ËL7104C/EL7114C High Speed, Single Channel, Power MOSFET Driven F e a tu r e s G e n e r a l D e s c r ip tio n • I n d u s try s ta n d a rd d riv e r re p lacem en t • Im p ro v e d resp o n se tim es • M a tc h e d rise a n d fall tim e s
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7104C/EL
EL7104CN
MDP0031
EL7104C4-13
EL7114CN
el inverter Schematic
EL7104C
EL7104CS
EL7114CS
EL7114
MOSFET 4420
power mosfet drivers
7104C
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FDS9933A
Abstract: No abstract text available
Text: c ; CJ V :L jL J C v FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET G eneral Description Features These P-Channel 2.5V specified M OSFETsare produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDS9933A
FDS9933A
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L25C
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34417AA-N • General description B F e a tu re s E L M 34417A A -N u s e s ad v an c e d tre n c h te ch n o lo g y to provide excellent Rds on , low gate charge • V d s= -3 0 V and low • Id=-6A gate re sista n ce . • Rds(on) <
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ELM34417AA-N
ELM34417AA-N
L25C
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1rf830
Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Text: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*
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IRFQ20/Q21/822/823
IRF820R/821R/822R/823R
IRF820,
RF821,
1RF822,
IRF823
IRF820R,
IRF821R,
IRF822R
IRF823R
1rf830
1rf840
RF822
IRFB40R
IRF820R
IRF830R
J50 mosfet
IRFS30
RF842
IRF820
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siliconix an803
Abstract: No abstract text available
Text: Tem ic AN803 Siliconix Thermal Characteristics of Siliconix’s LITTLE FOOT Family of Surface-Mount MOSFETs A lth o u g h a w id e sele c tio n o f digital an d lin e a r IC s have b e en available in su rfa c e-m o u n t p ack ag es fo r som e tim e, circuits th a t re q u ire p o w e r devices have, fo r th e
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AN803
PHP-12,
SO-16
siliconix an803
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T his P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize
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FDS6675
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1426c
Abstract: IC1427 ic1426
Text: MICI 426/1427/1428 Dual 1.2A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features Low Cost Latch-Up Protected: W ill W ithstand 500mA Reverse Output Current ESD P ro te c te d . ±2kV
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IC1426/27/28
MIC1426
DS0026,
MIC1426/27/28
MIC426/27/2
1426c
IC1427
ic1426
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Untitled
Abstract: No abstract text available
Text: 1.5A Dual High Speed MOSFET Drivers calodic CORPORATION CLM4426 /CLM4427/CLM4428 FEATURES DESCRIPTION • • • • • The CLM4426 series are dual CMOS drivers are designed to drive capacitive, resistive and inductive loads switching 1000pF gate capacitances in under 30ns while providing low
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CLM4426
/CLM4427/CLM4428
1000pF
1B-40
1B-41
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itc 1426c
Abstract: IC1427 IC1426C 1428C 1428cn
Text: MICI 426/1427/1428 Dual 1.2A-Peak Low-Side MOSFET Driver • M E R E ! . Bipolar/CMOS/DMOS Process Features General Description Low Cost Latch-Up Protected: W ill Withstand 500mA Reverse Output Current ESD P ro te cte d . ±2kV
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500mA
1000pF
itc 1426c
IC1427
IC1426C
1428C
1428cn
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