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    Texas Instruments MMWAVEICBOOST

    INDUSTRIAL CARRIER EVM
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    DigiKey MMWAVEICBOOST Box 53 1
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    Olimex FOSDEM-MUSIC-BOX

    FOSDEM-MUSIC-BOX
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    DigiKey FOSDEM-MUSIC-BOX Bulk 4 1
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    Embest Info&Tech Co Ltd GI 4000-PNEUMATIC BOARD 50

    Medical Board |Embest GI 4000-PNEUMATIC BOARD 50
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    Newark GI 4000-PNEUMATIC BOARD 50 Bulk 1
    • 1 $146.85
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    Sinovoip Co Ltd BPI-M1 ARCYLIC BOX

    Enclosure: for computer; plexiglass PMMA; colourless
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    TME BPI-M1 ARCYLIC BOX 63 1
    • 1 $3.82
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    Sinovoip Co Ltd BPI-M2+ ACRYLIC BOX

    Enclosure: for computer; plexiglass PMMA; transparent
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    TME BPI-M2+ ACRYLIC BOX 33 1
    • 1 $5.46
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    ICBO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Surface-mount Power Transistor Array SPF0001 Tj Tstg Electrical Characteristics Ta=25ºC Unit V V V A A W ºC ºC Symbol Test Conditions ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA I FEC = 6A


    Original     		PDF SPF0001 20pin 100mmâ

    SDH02

    Abstract: No abstract text available
    Text: SDH02 NPN Darlington With built-in flywheel diode Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 1.5 A hFE 2000 ICP 2.5 (PW≤1ms, Du≤10%) A IB


    Original     		PDF SDH02 SDH02

    SMD-16A

    Abstract: SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array
    Text: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min


    Original     		PDF SDC09 10max 15max 80min SMD-16A SMD-16A SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array

    STA400

    Abstract: STA475A STA47
    Text: STA475A NPN Darlington External dimensions D With built-in avalanche diode Absolute maximum ratings Ta=25°C Specification min typ max Ratings Unit Symbol VCBO 100±15 V ICBO VCEO 100±15 V IEBO VEBO 6 V VCEO 85 IC 2 A hFE 2000 ICP 4 (PW≤1ms, Du≤25%)


    Original     		PDF STA475A STA400 STA400 STA475A STA47

    SDA05

    Abstract: No abstract text available
    Text: SDA05 PNP Darlington 3-phase motor drive Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C ••• SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO –60 V ICBO VCEO –60 V IEBO VEBO –6 V VCEO


    Original     		PDF SDA05 SDA05

    SDC07

    Abstract: No abstract text available
    Text: SDC07 NPN Darlington 3-phase motor drive Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C ••• SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO 60 V ICBO VCEO 60 V IEBO VEBO 6 V VCEO 60 IC 4 A


    Original     		PDF SDC07 SDC07

    STA308A

    Abstract: sta308 STA300
    Text: STA308A Absolute maximum ratings PNP Darlington General purpose External dimensions C Ta=25°C Specification min typ max Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)


    Original     		PDF STA308A STA300 STA308A sta308 STA300

    STA302A

    Abstract: STA300
    Text: STA302A Absolute maximum ratings PNP Darlington General purpose/3-phase motor drive Ratings Unit Symbol VCBO –50 V ICBO VCEO –50 V IEBO VEBO –6 V VCEO –50 IC –4 A hFE 1000 ICP –8 PW≤10ms, Du≤50% A VCE(sat) W 15 (Tc=25°C) Tj 150 °C Tstg


    Original     		PDF STA302A PW10ms, STA300 STA302A STA300

    lf817

    Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
    Text: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V


    Original     		PDF SLA8004 100max 60max 60min 150min 35max 55min 80min lf817 pnp 8 transistor array pnp array SLA8004 1/stv 9902

    transistor 2n5550

    Abstract: 2N5550
    Text: SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V N E K Low Leakage Current. G D J : ICBO=100nA Max. , VCB=100V


    Original     		PDF 2N5550 100nA 100MHz transistor 2n5550 2N5550

    2N4033

    Abstract: 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) *TYP *TYP *TYP *TYP *TYP MAX MAX *ICEO *ICES *ICEV *ICER


    Original     		PDF 2N4030 2N4031 2N4032 2N4925 2N4926 2N4927 2N4928 2N4929 2N4033 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235

    2N5189

    Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MAX *ICEO *ICES *ICEV


    Original     		PDF 2N4930 2N4931 2N4943 2N5681 2N5682 2N5781 2N5782 2N5783 2N5189 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109

    2N5963

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		PDF O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3706 MPS3707 MPS3708 2N5963 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830

    FM20

    Abstract: FN812
    Text: Power Transistor FN812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max 100min 70min 0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5


    Original     		PDF FN812 10max 100min 70min FM20 FN812

    2N5551

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage


    OCR Scan     		PDF 2N5551 100MHz 2N5551

    3SK190

    Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
    Text: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip


    OCR Scan     		PDF 2SK1645* 2SK1646* SGF104 SGF11v SGF15* 3SK190 SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715

    2N3569

    Abstract: 2N3643 TO-105 2N3643 2N3566 2N3642 2N3646 CIL596 2N3567 CIL761 CIL762
    Text: T0-1Ó5 EPOXY PACKAGE TRANSISTORS NPN Type No. VCBO V CEO (V) (V) V EBO (T a = 2 5 ° C , U n l e s s O t h e r w is e S p e c i f ie d ) E le c t r ic a l C h a r a c t e r is t ic s M a x im u m R a t in g s IcBO V CB d •¥ e (MA) (V) Max Min Max


    OCR Scan     		PDF O-105 OL597 2N3642 C1L595 CIL596 2N3567 CIL763 CIL771 CIL772 CIL773 2N3569 2N3643 TO-105 2N3643 2N3566 2N3646 CIL761 CIL762

    TMPT6429

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25


    OCR Scan     		PDF 0003b0L TMPT2221A TMPT2222 TMPT2222A TMPT2484 TMPT3903 TMPT3904 TMPT4124 TMPT4401 TMPT5088 TMPT6429

    bc 147 transistor

    Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
    Text: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits


    OCR Scan     		PDF 0Q0D014 O-106 O-237 bc 147 transistor transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b

    2n h 2222a

    Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT


    OCR Scan     		PDF 2N917 O-237 2n h 2222a transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 33T4

    Untitled

    Abstract: No abstract text available
    Text: Maximum Ratings Type No. VCBO ^CEO VEBÓ Electrical Characteristics Ta=25"C, Unless Otherwise Specified - (V) Min (V) Min (V) Min Pd 'c <W) (A) 6Tc=25°c 2N3702 40 25 5 0.625 0.6 2N3905 40 40 5 0.625 0.2 IcBO ^CB tas VCE (mA) e (V) (mA) 0 (V ) Max Max Min


    OCR Scan     		PDF 2N3702 2N3905

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN


    OCR Scan     		PDF 2N3576 2N3672 2N3700 2N4962 2N4963 2N5056 2N5057 2N4209 2N4269

    Untitled

    Abstract: No abstract text available
    Text: Lf5E D ITOS H ^0^7250 001775^ 0 TOSHIBA TRANSISTOR 2N4126 SILICON PNP EPITAXIAL TYPE PCT PROCESS 'T TOSHIBA (DISCRETE/OPTO) Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcBO=“50nA(Max.) @ VcB*-20V


    OCR Scan     		PDF 2N4126 -50toA, 2N4124 -50mA, -10mA, 100MHz

    transistor BC170

    Abstract: BC170C TRANSISTOR BC170B BC170B BC170 transistor BC170c BC170A BC170 TRANSISTOR bc172 bc174b
    Text: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2N5S15 Electiical Characteristics (Ta=25°C, Unless Otherwise Specified) 'c ^CBO ^CEO ^EBO Po (W) (V) (V) (V) (A) ,/in Min Min Tc=25°c 250 250 6 0.625 0.5 9 IcBO VCB ^CES ^CE W @ (V) M


    OCR Scan     		PDF 2N5S15 2N6516 transistor BC170 BC170C TRANSISTOR BC170B BC170B BC170 transistor BC170c BC170A BC170 TRANSISTOR bc172 bc174b