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    Text: ICE8N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 8A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.38Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


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    PDF ICE8N70FP 250uA O-220 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00