AVD015F
Abstract: TACAN ASI10556
Text: AVD015F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD015F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Class C Operation • PG = 10 dB at 15 W/1150 MHz
|
Original
|
PDF
|
AVD015F
AVD015F
ASI10556
TACAN
ASI10556
|
TACAN
Abstract: No abstract text available
Text: AVD0.5S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI AVD0.5S is Designed for Class A, DME/TACAN Applications up to 1150 MHz. 45° C E B E B FEATURES: C D J • Class A Operation • PG = 10 dB at 0.5 W/1150 MHz • Omnigold Metalization System
|
Original
|
PDF
|
|
ASI10691
Abstract: No abstract text available
Text: UML3 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI UML3 is Designed for 45° C High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. E B E B C D J FEATURES: E • Class C Operation • PG = 12 dB at 3.0 W/400 MHz
|
Original
|
PDF
|
ASI10691
ASI10691
|
ic 245
Abstract: TACAN ASI10558 AVD035F DSA0029008 724G
Text: AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. A .100 X 45° ØD C B E FEATURES: F G H • Class C Operation • PG = 10 dB at 35 W/1150 MHz
|
Original
|
PDF
|
AVD035F
AVD035F
ASI10558
ic 245
TACAN
ASI10558
DSA0029008
724G
|
ASI10587
Abstract: FMB075
Text: FMB075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB075 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System
|
Original
|
PDF
|
FMB075
FMB075
112x45°
ASI10587
ASI10587
|
TP9380
Abstract: transistor j 108
Text: TP9380 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System
|
Original
|
PDF
|
TP9380
TP9380
112x45°
transistor j 108
|
ic 006
Abstract: SD8250 F B J22
Text: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84
|
Original
|
PDF
|
SD8250
SD8250
ic 006
F B J22
|
tp9380
Abstract: No abstract text available
Text: TP93805 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System
|
Original
|
PDF
|
TP93805
TP9380
112x45°
|
MLN1037F
Abstract: ASI10628
Text: MLN1037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN1037F is Designed for Class A Linear Applications up to 1.0 GHz. A ØD B FEATURES: .060 x 45° CHAMFER C E • Class A Operation • PG = 10 dB at 5.0 W/1.0 GHz • Omnigold Metalization System
|
Original
|
PDF
|
MLN1037F
MLN1037F
ASI10628
|
ASI10589
Abstract: FMB175 c 108 m 229
Text: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Class C Operation • PG = 10 dB at 175 W/108 MHz • Omnigold Metalization System
|
Original
|
PDF
|
FMB175
FMB175
ASI10589
ASI10589
c 108 m 229
|
Untitled
Abstract: No abstract text available
Text: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD B FEATURES: E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System
|
Original
|
PDF
|
MLN2037F
MLN2037F
ASI10635
|
AVD035F
Abstract: TACAN ASI10558 1402 Transistor
Text: AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. A .100 X 45° ØD .088 x 45° CHAMFER C B E FEATURES: F G H • Class C Operation
|
Original
|
PDF
|
AVD035F
AVD035F
10AXIMUM
TACAN
ASI10558
1402 Transistor
|
for IR IGBT die
Abstract: 300C IRG4CC71KB IRG4PSC71K MIL-HDBK-263
Text: PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
|
Original
|
PDF
|
1834A
IRG4CC71KB
IRG4CC71KB
for IR IGBT die
300C
IRG4PSC71K
MIL-HDBK-263
|
Untitled
Abstract: No abstract text available
Text: PD- 91875A IRG4CC81KB IRG4CC81KB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
|
Original
|
PDF
|
1875A
IRG4CC81KB
IRG4CC81KB
|
|
|
TACAN
Abstract: ASI10562 AVD090F
Text: AVD090F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B A The ASI AVD090F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 90 W/1150 MHz
|
Original
|
PDF
|
AVD090F
AVD090F
ASI10562
TACAN
ASI10562
|
MLN2037F
Abstract: D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635
Text: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD FEATURES: B E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System
|
Original
|
PDF
|
MLN2037F
MLN2037F
D 5888 s
transistor 1548 b
D 5888
equivalent transistor c 5888
ASI10635
|
AVD075F
Abstract: ic 245 TACAN ASI10560
Text: AVD075F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD075F is designed for applications requiring Class C, High Peak Power and low duty cycle such as IFF, DME and TACAN A .100 X 45° ØD C B E FEATURES: F G H • Internal Input Matching Network
|
Original
|
PDF
|
AVD075F
AVD075F
ASI10560
ic 245
TACAN
ASI10560
|
BLW80
Abstract: No abstract text available
Text: BLW80 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLW80 is Designed for Class A,B or C UHF & VHF Communication applications up to 470 MHz. A 45° C E B E B FEATURES: C D • PG = 8.0 dB Typical at 470 MHz • Omnigold Metallization System
|
Original
|
PDF
|
BLW80
BLW80
|
AVF150
Abstract: TACAN ASI10570 1402 Transistor
Text: AVF150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG B DESCRIPTION: A .100 X 45° The ASI AVF150 is a high power Class C transistor, Designed forIFF/DME/TACAN Applications in 960-1215 MHz. ØD .088 x 45° CHAMFER C B FEATURES: E F • Internal Input/Output Matching Networks
|
Original
|
PDF
|
AVF150
AVF150
ASI10570
TACAN
ASI10570
1402 Transistor
|
MSC1090M
Abstract: 1402 Transistor transistor k 790
Text: MSC1090M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B A .100 X 45° The ASI MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. ØD 1 3 C B .088 x 45° CHAMFER 4 2 E F FEATURES:
|
Original
|
PDF
|
MSC1090M
MSC1090M
1402 Transistor
transistor k 790
|
MSC81035M
Abstract: TACAN TACAN 41
Text: MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG B A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES:
|
Original
|
PDF
|
MSC81035M
MSC81035M
TACAN
TACAN 41
|
BLW81
Abstract: No abstract text available
Text: BLW81 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications A 45° C E B FEATURES: E B • PG = 6 dB Typical at 470 MHz • Omnigold Metallization System C D J E I F
|
Original
|
PDF
|
BLW81
BLW81
|
Untitled
Abstract: No abstract text available
Text: BLU20/12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLU20/12 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 20 W/470 MHz • Omnigold Metalization System
|
Original
|
PDF
|
BLU20/12
BLU20/12
|
100WPEP
Abstract: ASI10608 HF100-28 E270
Text: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • High linear power output
|
Original
|
PDF
|
HF100-28
HF100-28
112x45°
ASI10608
100WPEP
ASI10608
E270
|
