IXFN34N80
Abstract: No abstract text available
Text: IXFK 34N80 IXFX 34N80 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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34N80
34N80
247TM
IXFN34N80
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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34N80
34N80
247TM
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34N80
Abstract: IXFN34N80 ixfx34n80
Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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34N80
247TM
34N80
IXFN34N80
ixfx34n80
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 Ω trr ≤ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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34N80
125OC
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g2ns
Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Text: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold
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NE72118
NE72118)
g2ns
C10535E
NE72118
NE72118-T1
NE72118-T2
NEC k 2134
812 421
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OZ 9640
Abstract: YPN006-021 AE-03 KA HYPERTRONICS YSK006-011AH hypertronics ka series
Text: Hypertronics Catalog sec 3 5/1/06 10:14 AM Page 19 KA SERIES 4 & 5 Row 4 & 5 ROW P.C. BOARD CONNECTORS 48, 68, 80, 96, 100, 108, 120, 125, 128, 136, 140, 160, 184, 196, 200, 208, 228, 230, 240, 264, 300, 320, 330, 352, 390, 392 & 490 CONTACTS FOR PHOTO DO NOT PRINT BOX!
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33ith
OZ 9640
YPN006-021
AE-03
KA HYPERTRONICS
YSK006-011AH
hypertronics ka series
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ae gp 738
Abstract: YSK006-011AH KA HYPERTRONICS MS3198-1 DEM1.0060 YSK006-010AH MS3198 hypertronics ka series 092AH
Text: KA SERIES 4 & 5 Row 4 & 5 ROW P.C. BOARD CONNECTORS 48, 68, 80, 96, 100, 108, 120, 125, 128, 136, 140, 160, 184, 196, 200, 208, 228, 230, 240, 264, 300, 320, 330, 352, 390, 392 & 490 CONTACTS FOR PHOTO DO NOT PRINT BOX! 4 row and 5 row connectors. .100” 2.54mm x .100” (2.54mm) grid spacing.
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YSK006-011AH
Abstract: 550063 YPN006-021 020AH MS3198 KA HYPERTRONICS
Text: KA SERIES 4 & 5 Row 4 & 5 ROW P.C. BOARD CONNECTORS 48, 68, 80, 96, 100, 108, 120, 125, 128, 136, 140, 160, 184, 196, 200, 208, 228, 230, 240, 264, 300, 320, 330, 352, 390, 392 & 490 CONTACTS FOR PHOTO DO NOT PRINT BOX! 4 row and 5 row connectors. .100” 2.54mm x .100” (2.54mm) grid spacing.
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YSK006-011AH
Abstract: hypertac connector insertion tools YSK006-009 hypertronics ka series YSK006-010AH YPN006-019 YSK006 MS3198 YPN006-036 YSK006-029AH
Text: KA SERIES TYPICAL APPLICATIONS Besides the standard daughter to mother board combination, the KA Series offers alternate combinations for each unique application. Some of the most popular are shown below. However, many other possibilities can be accommodated, such as extender cards, p.c. boards to Wire Wrap back planes, piggy-backing, etc.
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1--888--HYPERTAC
YSK006-011AH
hypertac connector insertion tools
YSK006-009
hypertronics ka series
YSK006-010AH
YPN006-019
YSK006
MS3198
YPN006-036
YSK006-029AH
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Untitled
Abstract: No abstract text available
Text: REVISION B DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] Pb THIS PRODUCT MANUFACTURED WITH LEAD-FREE PROCESSING SSMB-P-C-XX-ST-CA1 TERMINATION -CA1: RG316U/RG174U CABLE GENDER -P: PLUG DO NOT SCALE FROM THIS PRINT ORIENTATION -ST: STRAIGHT TYPE -C: CABLE B
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RG316U/RG174U
CO-HD-WI-3040-M.
TY-SMA001-1
TY-SMA001-2
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uc 3808
Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 k 2134 nec od6000
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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a7906
Abstract: I99S
Text: GROUNDING C L IP .8 5 9 1 .0 » I 11.5010.031 nt Ï •2 6 0 n 6 .6 ß i_ ■023 10.74) .171 (4.3 4) 151 J .4 0 8 (1 0 .3 6 ) .2 0 1 3 .0 0 2 (5 .1 0 1 0 .0 5 ) (NOTE 3) _ N O T ES : S E E SH E E T 4 & 5 FOR CH A R TED DIM ENSIO NS AND P A R T N UM BERS.
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ECHANICA515
SPA-79059-2
ai/28
a7906
I99S
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hax 486
Abstract: R30EF18A 14S0A sbc 486
Text: DEE D I 4055452 □007c]flLl □ IO R 02E 07984 D T " - £ 3 - «2 3 Data Sheet No. PD-2.118 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER o R30EF SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 465 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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S54SS
D0071fl4
R30EF
2000v
1800v
1B00V,
R30EF18A.
hax 486
R30EF18A
14S0A
sbc 486
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sl2 357
Abstract: No abstract text available
Text: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold
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NE72118
NE72118-T1
NE72118-T2
WS60-00-1
IR30-00-2
sl2 357
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NE8004
Abstract: NE800495-4
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •
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NE8004
NE800495-X
212vs
L42752S
0DLSS40
NE800495-4
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LK A W01
Abstract: No abstract text available
Text: RGB640 11.0 Pin Descriptions 11.1 Summary Description Number Video Reference Clock Input 1 External Video Clock Input 2 Auxiliary Reference Clock Input 1 Auxiliary PLL Output Clock Output 1 Divided Dot Clock Output 1 Serial Clock Output 1 Load Clock Input
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RGB640
ERJ3GVYJ132S
ERJ3GVYJ102S
1206C681K3B05
0603X102K2B02
1206X103K2B02
LM385-1
LK A W01
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Untitled
Abstract: No abstract text available
Text: 1 2 4 3 RoHS COMPLIANT * * 2556 S e rie s * * * MATERIAL : ORDERING INFORMATION * INSULATOR : PBT+30%G.F UL94V-0 * CONTACT : BRASS L»» 1 2 3 1. NO. OF CIRCUITS 2556 P * * 2. PLATING : T = TIN PLATED 120u” OVER 3 0 ~ 5 0 u ” NICKEL OVERALL U = GOLD FLASH OVER 3 0 ~ 5 0 u ”
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UL94V-0
ES071009
ES060652
ES060628
ES060751
ES081117
2556P*
255632S
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NE800495-4
Abstract: NE8004 NE800495-5 NE800495-7
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES
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NE8004
800495-X
vol56
S12S21|
NE800495-4
NE800495-5
NE800495-7
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WC03
Abstract: wb03 IX151
Text: RGB640 2.0 Serializer T he s e ria liz e r is loaded w ith m u ltip le p ixels a t th e ris in g edge o f th e load clock. The p ixels are th e n serialized in te rn a lly to produce one pixel fo r each video clock cycle. T he RG B640 fe a tu re s a pro g ra m m a b le s e ria liz e r capa
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RGB640
WC03
wb03
IX151
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ne8004 FET
Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY
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NE8004
NE800495-X
NE800495
E800400
gm037
ne8004 FET
ne800495-6
ne0800
NE8004956
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Untitled
Abstract: No abstract text available
Text: Introduction This manual describes the architecture o f the IQ family o f integrated circuit chips, which includes the IQ320, IQ240B, IQ160, IQ128B, IQ96, IQ64B, IQ48, and IQ32B part types. Each IQ device implements a non-blocking switch matrix. Each signal line in
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IQ320,
IQ240B,
IQ160,
IQ128B,
IQ64B,
IQ32B
IQ32B
IQ64B
00QCHQ1
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IQ160
Abstract: IDS200 TLR 308 IQ128B IQ240B IQ320 IQ32B IQ48 IQ64B IQ96
Text: Introduction This manual describes the architecture o f the IQ family of integrated circuit chips, which includes the IQ320, IQ240B, IQ160, IQ128B, IQ96, IQ64B, IQ48, and IQ32B part types. Each IQ device implements a non-blocking switch matrix. Each signal line in
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IQ320,
IQ240B,
IQ160,
IQ128B,
IQ64B,
IQ32B
TQG41Ã
IQ64B
IQ32B
IQ160
IDS200
TLR 308
IQ128B
IQ240B
IQ320
IQ48
IQ64B
IQ96
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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Untitled
Abstract: No abstract text available
Text: Introduction This manual provides the information needed to configure the IQX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the IQX devices. In addition, this manual explains how the boundary scan features implemented in the IQX devices can be used
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IQX320,
IQX240B,
IQX160
IQX128B.
IQX160
IQX128B
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