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Catalog Datasheet	MFG & Type	Document Tags	PDF
TR510 Abstract: APT10021JLL DSA003641 Text: APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT10021JLL OT-227 TR510 APT10021JLL DSA003641	PDF
Untitled Abstract: No abstract text available Text: APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT10021JLL OT-227	PDF
APT5014B2VFR Abstract: APT5014LVFR Text: APT5014B2VFR APT5014LVFR 500V POWER MOS V FREDFET 37A 0.140Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT5014B2VFR APT5014LVFR O-264 O-264 APT5014B2VFR O-247 APT5014LVFR	PDF
Untitled Abstract: No abstract text available Text: APT5014B2VFR APT5014LVFR 37A 0.140Ω 500V POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT5014B2VFR APT5014LVFR O-264 O-264 APT5014B2VFR O-247	PDF