AIRPAX IEG
Abstract: iug airpax iugn airpax military relay Airpax circuit breaker 1 pole 6 amp 3020 h3 UL1077 cegh
Text: Single Pole Circuit Breakers Multi-Pole Circuit Breakers IAGX/IUGX/IEGX/CEGX/ IAGZX/IUGZX/IEGZX/CEGZX Breakers IAGBX/IUGBX/IEGBX/CEGBX Breakers IAGN/IUGN Breakers 107 108 110 111 112 IEGS/CEGS/IEGHS/CEGHS Snap-In Circuit Breakers 113 Configurations 115 Operating Characteristics
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168 523.24
Abstract: AM144MX-TF 4-9094
Text: Plastic Packaged GaAs Power FET AM144MX-TF DATASHEET V. 1, November, 1999 DESCRIPTION AMCOM's AM144MX-TF is part of the TF Series of GaAs MESFETs. This part has a total gate width of 14.4 mm. The AM144MX-TF is designed for high power microwave applications, operating up to 8 GHz.
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AM144MX-TF
168 523.24
4-9094
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transistor 33166 t
Abstract: transistor 60318 La 7676 datasheet architecture of microprocessor 80386 tt 2222 Datasheet ARCHITECTURE OF 80286 PROCESSOR what is clock speed Architectural innovation transistor m5c H105-1
Text: Is Megahertz Enough? An IDC White Paper Sponsored by AMD Analyst: Shane Rau INTRODUCTION: WHAT’S THE PROBLEM? PC buyers usually rely on the clock speed megahertz of a PC's microprocessor to determine their purchasing decision. Because the industry lacks a simple, universally accepted way to judge performance, users have become conditioned to substituting clock speed to
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03-002SYSTEM3531
transistor 33166 t
transistor 60318
La 7676 datasheet
architecture of microprocessor 80386
tt 2222 Datasheet
ARCHITECTURE OF 80286 PROCESSOR
what is clock speed
Architectural innovation
transistor m5c
H105-1
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mda 2060
Abstract: um 100031 development trends in car manufacture mechanical engineering project Samsung svs 460GX Ansys led
Text: Itanium-Based Solutions in the Manufacturing Market Analysts: Kara M. Yokley, Earl Joseph II, Ph.D., and Christopher G. Willard, Ph.D. The Manufacturing Market The manufacturing market comprises some of the most demanding users of computers in the world. Continuous improvement in innovation rates and time-to-market, product quality, and cost reduction are
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00-347SYSTEM2763
mda 2060
um 100031
development trends in car manufacture
mechanical engineering project
Samsung svs
460GX
Ansys led
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NCP6360 D
Abstract: No abstract text available
Text: NCP6360 Mini Buck Converter for RF Power Amplifiers The NCP6360, a PWM synchronous step−down DC−to−DC converter, is optimized for supplying RF Power Amplifiers PAs used into 3G/4G wireless systems (Mobile/ Smart Phones, Phablets, Tablets, .) powered by single−cell Lithium−Ion batteries. The device
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NCP6360
NCP6360,
NCP6360
NCP6360/D
NCP6360 D
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Untitled
Abstract: No abstract text available
Text: NCP6361 Buck Converter with Bypass Mode for RF Power Amplifiers The NCP6361, a PWM synchronous step−down DC−to−DC converter, is optimized for supplying RF Power Amplifiers PAs used into 3G/4G wireless systems (Mobile / Smart Phones, Tablets, …) powered by single−cell Lithium−Ion batteries. The device is able to
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NCP6361
NCP6361,
NCP6361/D
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NCP6361 D
Abstract: No abstract text available
Text: NCP6361 Buck Converter with Bypass Mode for RF Power Amplifiers The NCP6361, a PWM synchronous step−down DC−to−DC converter, is optimized for supplying RF Power Amplifiers PAs used in 3G/4G wireless systems (Mobile / Smart Phones, Tablets,…) powered by single−cell Lithium−Ion batteries. The device is able to
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NCP6361
NCP6361,
NCP6361/D
NCP6361 D
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PDF
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Untitled
Abstract: No abstract text available
Text: NCP6361 Buck Converter with Bypass Mode for RF Power Amplifiers The NCP6361, a PWM synchronous step−down DC−to−DC converter, is optimized for supplying RF Power Amplifiers PAs used into 3G/4G wireless systems (Mobile / Smart Phones, Tablets, …) powered by single−cell Lithium−Ion batteries. The device is able to
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NCP6361
NCP6361,
NCP6361/D
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NCP6915 D
Abstract: No abstract text available
Text: NCP6915 6 Channels PMIC with One DCDC Converter and 5 LDOs The NCP6915 integrated circuit is part of the ON Semiconductor mini power management IC family. It is optimized to supply battery powered portable application sub−systems such as camera function,
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NCP6915
NCP6915
WLCSP16
567GF
NCP6915/D
NCP6915 D
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Untitled
Abstract: No abstract text available
Text: NCP6915 6 Channels PMIC with One DCDC Converter and 5 LDOs The NCP6915 integrated circuit is part of the ON Semiconductor mini power management IC family. It is optimized to supply battery powered portable application sub−systems such as camera function,
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NCP6915
NCP6915
WLCSP16
567GF
NCP6915/D
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Untitled
Abstract: No abstract text available
Text: Catalog 1242163 Smart Card Connectors Revised 2-99 Smart Card Connector, Panel Mount, IDG Termination, With Ribbon Cable Card Detection Switch: Normally Closed Switch Style: Unsealed Performance Characteristics Current Rating: Signal in class A 100 mA and
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Voltage79-0
UL94V-0,
OOD76
1-800-522-6752-Pioduct
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FLM0910-4C
Abstract: FLM0910
Text: FLM0910-4C Fuffrsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed
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FLM0910-4C
36dBm
FLM0910-4C
1100mA
FLM0910
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FLM1011-4C
Abstract: Fujitsu FLM 150 1011-4C
Text: nm-rcii FLM1011-4C r U JI1bU Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q
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FLM1011-4C
FLM1011-4C
1011-4C
1100mA
Fujitsu FLM 150
1011-4C
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Untitled
Abstract: No abstract text available
Text: FLM1011-8C ff rU Internally Matched Power GaAs FETs J1 1j U FEATURES • • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q
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FLM1011-8C
FLM1011-8C
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Untitled
Abstract: No abstract text available
Text: EUPEC SBE D 3m]32*i7 ÜQQüSn IDG « U P E C T 600 F • ^ Z S -v Z 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm Vrrm
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GaAs FETs
Abstract: FLM1011-4D
Text: m n-rai FLM1011-4D Internally Matched Power GaAs FETs rU JI Ij U FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • • High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz
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-45dBc
25dBm
FLM1011-4D
FLM1011-4D
1100mA
GaAs FETs
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FLM0910-8C
Abstract: i80m
Text: FLM0910-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q
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FLM0910-8C
FLM0910-8C
i80m
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FLM0910-2
Abstract: No abstract text available
Text: FLM0910-2 Fuffrsu Internally M a tc h e d P o w e r G aA s F E T s FEATURES • High Output Power: P-idg = 33.5dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q
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FLM0910-2
FLM0910-2
600mA
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FLM1011-2
Abstract: No abstract text available
Text: F L M lO ll-2 Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • High Output Power: P-idg = 33.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 28% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q
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FLM1011-2
600mA
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IC Data-book
Abstract: cs 16-12
Text: m n-rai rUJI I j U FLM1011-12F Internally M a tc h e d P o w e r G a A s F E T s FEATURES • High Output Power: P-idg = 40.5dBm Typ. • High Gain: G-j^B = 6.0dB (Typ.) • High PAE: r iadd = 25% (Typ.) • Low IM3 = -45dBc@Po = 29.5dBm • Broad Band: 10.7 ~ 11.7GHz
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FLM1011-12F
-45dBc
FLM1011-12F
FLM1011
IC Data-book
cs 16-12
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FLM1011-8D
Abstract: No abstract text available
Text: FLM1011-8D F im T Ç II r U J I 1j U Internally M a tc h e d P o w e r G a A s F E T s FEATURES • High Output Power: P-idg = 38.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 10.7 ~ 11.7GHz
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FLM1011-8D
-45dBc
28dBm
FLM1011-8D
Ch900
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MXM 3 CONNECTOR
Abstract: MXM CONNECTOR AVR IC lan AVR AVR LCD AVR-M1608C120MT2AB AVR 200 AVR-M1608C120MT6AB AVRM1005C6R8NT101N ess-630a
Text: P r o d u c t U p d a t e p i l e u m -m tm Zinc-Oxide-Praseodymium based Multilayer Chip Varistors A V R -M , A V R L , A V F 1 6 ^ « MSRoHSffi^ EU Directive 2002/95/EC, «¡EttSfell$ïKtffflÊÎ]\ *ffiffl» .» .^ A « H » ,È U a # S a *iS ?!lffl* tfflK l* * *(P B B iP )ie i^ a iE « l(P B D E ).
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AVF16^
2002/95/EC,
ESS-63QA.
IEC61000-4-2IXWÃ
150pF-330Q)
AVR-M1608C270KT6AB
AVR-M1608C120MT2AB
08C270KT2AB
PUF-SA16CA
MXM 3 CONNECTOR
MXM CONNECTOR
AVR IC
lan AVR
AVR LCD
AVR 200
AVR-M1608C120MT6AB
AVRM1005C6R8NT101N
ess-630a
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089f
Abstract: 6K-24V s251c bp1201 F304 JY682 6K240
Text: Energy Efficient Direct Incandescent Replacement 525nm Super Green Based LEDs Options Features • M aintenance Free, Easy Installation • Low Power, High Intensity •W a r m & Incandescent W hite Available • Long Life 10 0 ,0 0 0 + hrs 1 0 Years • M ajor Power Savings
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525nm
-080T
-090T
-100T
PC120
21PCT170
31PCT170
41PCT170
PCT200
21PCT200
089f
6K-24V
s251c
bp1201
F304
JY682
6K240
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2S54
Abstract: 2s80 program 2s56
Text: ANALOG DEVICES FEA T U R E S Direct Conversion of LV D T and R V D T Outputs into Digital Format Ratiometric Conversion for Extremely High Stability High Resolution 14-16 Bit Parallel Digital Output User Definable Input Gain Quadrature Rejection Operation Over 360 Hz to 11 kHz Frequency Range
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14-Bit
16-Bit
2S54/2S56/2S58
40-Pin
2S54
2s80 program
2s56
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