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    IDH15S120 Search Results

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    IDH15S120 Price and Stock

    Rochester Electronics LLC IDH15S120AKSA1

    DIODE SIL CARB 1.2KV 15A TO220-2
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    DigiKey IDH15S120AKSA1 Tube 499 25
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    • 100 $12.47
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    Infineon Technologies AG IDH15S120AKSA1

    DIODE SIL CARB 1.2KV 15A TO220-2
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    DigiKey IDH15S120AKSA1 Tube
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    Avnet Americas IDH15S120AKSA1 Tube 4 Weeks 29
    • 1 $12.59
    • 10 $12.59
    • 100 $9.58889
    • 1000 $9.58889
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    Bristol Electronics IDH15S120AKSA1 80
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    Quest Components IDH15S120AKSA1 64
    • 1 $19.26
    • 10 $19.26
    • 100 $14.98
    • 1000 $14.98
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    Rochester Electronics IDH15S120AKSA1 499 1
    • 1 $12.59
    • 10 $12.59
    • 100 $11.83
    • 1000 $10.7
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    Infineon Technologies AG IDH15S120

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    Bristol Electronics IDH15S120 194
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    IDH15S120 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDH15S120 Infineon Technologies Silicon Carbide Schottky Diodes - NEW 3G now available!; Package: PG-TO220-2; Technology: thinQ! 2G; V: 1,200.0 V; IF (typ): 15.0 A; QC (typ): 54.0 nC; Package: TO-220 real 2pin Original PDF
    IDH15S120AKSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1200V 15A TO220-2 Original PDF

    IDH15S120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original     		PDF IDH15S120 PG-TO220-2

    g25n120

    Abstract: IKW25N120H3 IDH15S120 igw25n120 IgW25N120H3 pspice high frequency igbt
    Text: IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation


    Original     		PDF IDH15S120 IGW25N120H3 g25n120 IKW25N120H3 IDH15S120 igw25n120 IgW25N120H3 pspice high frequency igbt

    d15s120

    Abstract: IDH15S120 PG-TO220 JESD22
    Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior V DC 1200


    Original     		PDF IDH15S120 PG-TO220-2 PG-TO22ngerous d15s120 IDH15S120 PG-TO220 JESD22

    D15S120

    Abstract: PG-TO220-2 PG-TO220 IDH15S120 JESD22 C15T
    Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C


    Original     		PDF IDH15S120 PG-TO220-2 IDH15S1ngerous D15S120 PG-TO220-2 PG-TO220 IDH15S120 JESD22 C15T

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    IJW120R070T1

    Abstract: IJW120R silicon carbide
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description


    Original     		PDF IJW120R070T1 IJW120R070T1 IJW120R silicon carbide

    Untitled

    Abstract: No abstract text available
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description


    Original     		PDF IJW120R100T1

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT IGW25N120H3 Datasheet IndustrialPowerControl IGW25N120H3 Highspeedswitchingseriesthirdgeneration


    Original     		PDF IDH15S120 IGW25N120H3