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    diagram ic A 7800A

    Abstract: A 7800A DIM1800ESM17-E000
    Text: DIM1800ESM17-E000 DIM1800ESM17-E000 Single Switch IGBT Module PDS5793-1.1 July 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand


    Original     		PDF DIM1800ESM17-E000 PDS5793-1 diagram ic A 7800A A 7800A DIM1800ESM17-E000

    DIM1200FSM12-A000

    Abstract: No abstract text available
    Text: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003


    Original     		PDF DIM1200FSM12-A000 DS5547-2 DS5547-3 DIM1200FSM12-A000

    74188

    Abstract: DIM1200NSM12-E000 IGBT full bridge 1200 28130
    Text: DIM1200NSM12-E000 DIM1200NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5750-1.2 FEATURES PDS5750-2.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) *


    Original     		PDF DIM1200NSM12-E000 PDS5750-1 PDS5750-2 74188 DIM1200NSM12-E000 IGBT full bridge 1200 28130

    160nF

    Abstract: DIM900ESM45-F000
    Text: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability


    Original     		PDF DIM900ESM45-F000 DS5872-1 LN24283) 160nF DIM900ESM45-F000

    DIM200MKS12-A000

    Abstract: DS-5552
    Text: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Replaces November 2002, issue DS5552-1.2 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*


    Original     		PDF DIM200MKS12-A000 DS5552-1 60arantee DIM200MKS12-A000 DS-5552

    DIM400DDM12-A000

    Abstract: DS5532-3
    Text: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5532-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5532-3.0 March 2003


    Original     		PDF DIM400DDM12-A000 DS5532-2 DS5532-3 3300Varantee DIM400DDM12-A000

    4250A

    Abstract: DIM2400NSM12-E000 Partial Discharge Measurements
    Text: DIM2400NSM12-E000 DIM2400NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5758-1.0 FEATURES PDS5758-2.0 April 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ


    Original     		PDF DIM2400NSM12-E000 PDS5758-1 PDS5758-2 4250A DIM2400NSM12-E000 Partial Discharge Measurements

    was dual transistor

    Abstract: DIM200MBS12-A000
    Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM


    Original     		PDF DIM200MBS12-A000 DS5543-1 DS5545-2 DIM200MBS12-A000 was dual transistor

    DIM400GCM33-A000

    Abstract: No abstract text available
    Text: DIM400GCM33-A000 DIM400GCM33-A000 IGBT Chopper Module DS5613-1.1 June 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *


    Original     		PDF DIM400GCM33-A000 DS5613-1 DIM400GCM33-A000

    DFM600XXM45-F000

    Abstract: DS5915-1
    Text: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating


    Original     		PDF DFM600XXM45-F000 DS5915-1 LN25309) DFM600XXM45-F000

    DFM400NXM33-F000

    Abstract: 3300V FRD
    Text: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating


    Original     		PDF DFM400NXM33-F000 DS5910-1 LN25214) DFM400NXM33-F000 3300V FRD

    DFM200PXM33-F000

    Abstract: basic ac motor reverse forward electrical diagram
    Text: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.0 March 2007 LN25211 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF


    Original     		PDF DFM200PXM33-F000 DS5908- LN25211) DFM200PXM33-F000 3300-volt, basic ac motor reverse forward electrical diagram

    DFM600XXM65-K000

    Abstract: DFM600XXXM65-K000
    Text: DFM600XXXM65-K000 Fast Recovery Diode Module DS5807-1.1 July 2007 LN25500 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 1200A Rating


    Original     		PDF DFM600XXXM65-K000 DS5807-1 LN25500) DFM600XXe DFM600XXM65-K000 DFM600XXXM65-K000

    DIM100PHM33-F000

    Abstract: No abstract text available
    Text: DIM100PHM33-F000 DIM100PHM33-F000 Half Bridge IGBT Module DS5764-1.2 June 2008 LN26119 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■


    Original     		PDF DIM100PHM33-F000 DS5764-1 LN26119 DIM100PHM33-F000

    bi-directional switches IGBT

    Abstract: DIM400PBM17-A000
    Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module DS5524-2.3 June 2008 LN26123 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		PDF DIM400PBM17-A000 DS5524-2 LN26123) DIM400PBM17-A000 170arantee bi-directional switches IGBT

    160nF

    Abstract: 4500a u4200 DIM900ESM45-F000
    Text: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25831) 4500V 2.9 V 900A 1800A *(measured at the power busbars and not the auxiliary terminals)


    Original     		PDF DIM900ESM45-F000 DS5872-1 LN25831) DIM900ESM45-F000 450ty 160nF 4500a u4200

    DIM400XCM33-F000

    Abstract: No abstract text available
    Text: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A


    Original     		PDF DIM400XCM33-F000 DS5938-1 LN26594) DIM400XCM33-F000

    data sheet IC 7400

    Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
    Text: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon


    Original     		PDF DIM1600FSM17- DS5455-3 LN26327) data sheet IC 7400 IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000

    DFM900FXM12-A000

    Abstract: No abstract text available
    Text: DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.3 November 2007 LN25316 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 900A 1800A Isolated Copper Base plate


    Original     		PDF DFM900FXM12-A000 DS5479-1 LN25316) DFM900FXM12-A000

    DFM1200EXM12-A000

    Abstract: DFM1200EXM12 DFM1200EXM
    Text: DFM1200EXM12-A000 Fast Recovery Diode Module DS5481-1.4 June 2008 LN26170 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Triple Diodes Can be paralleled for 3600A KEY PARAMETERS


    Original     		PDF DFM1200EXM12-A000 DS5481-1 LN26170) DFM1200EXM12-A000 DFM1200EXM12 DFM1200EXM

    DFM600FXM18-A000

    Abstract: 1050g
    Text: DFM600FXM18-A000 DFM600FXM18-A000 Fast Recovery Diode Module DS5438-1.4 April 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM typ VF (max) IF (max) IFM 1800V 2.0V 600A 1200A ■ Isolated Base


    Original     		PDF DFM600FXM18-A000 DS5438-1 DFM600FXM18-arantee DFM600FXM18-A000 1050g

    DIM200PLM33-F000

    Abstract: No abstract text available
    Text: DIM200PLM33-F000 . IGBT Chopper Module DS5864- 1.1 June 2008 LN26121 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) • High thermal cycling capability


    Original     		PDF DIM200PLM33-F000 DS5864- LN26121) DIM200PLM33-F000

    Untitled

    Abstract: No abstract text available
    Text: DIM150WHS12-E000 DIM150WHS12-E000 Half Bridge IGBT Module PDS5630-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM150WHS12-E000 PDS5630-1 DIM150WHS12-E000

    ALSIC 145

    Abstract: DFM400PXM33-F000
    Text: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.1 May 2008 LN26124 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 400A 800A Isolated AlSiC Base with AlN substrates


    Original     		PDF DFM400PXM33-F000 DS5909- LN26124) DFM400PXM33-F000 3300-volt, ALSIC 145