DA QG
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power Mosfet FMM 75-01F ID25 VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 75 A = 100 V = 25 mW 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25
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75-01F
75-01F
DA QG
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Untitled
Abstract: No abstract text available
Text: VWM 270-0075X2 Three phase full bridge with Trench MOSFETs VDSS = 75 V ID25 = 270 A RDS on = 2.1 mΩ L+ T1 G1 G3 T3 S3 G5 T5 S5 S1 L1 L2 L3 T2 G2 G4 T4 S4 G6 T6 S6 S2 L- Applications t MOSFET T1 - T6 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C IF25
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270-0075X2
20110321a
14Typ.
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Untitled
Abstract: No abstract text available
Text: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C
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24N100
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VUM33-06PH
Abstract: 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 mΩ Part name (Marking on product)
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33-06PH
VUM33-06PH
20100921b
VUM33-06PH
33-06PH
vum33
Fast Recovery Bridge Rectifier, 60A, 600V
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Untitled
Abstract: No abstract text available
Text: FMK 75-01F HiPerFETTM Power MOSFET = 75 A ID25 = 100 V VDSS Ω RDSon typ. = 18 mΩ Common Source Topology in ISOPLUS i4-PACTM 4 Preliminary data 5 T1 3 1 1 T2 2 5 Features Maximum Ratings VDSS TVJ = 25°C to 150°C 100 VGS TC = 25°C TC = 90°C IF25 IF90
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75-01F
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1500-0075X2
Abstract: No abstract text available
Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 11 VDSS TVJ = 25°C to 150°C Maximum Ratings 75 V ± 20 V u VGS TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j TC = 80°C (diode) j
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1500-0075X2
20100629a
1500-0075X2
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number 820-IF252.5M-30A Product Description 252.5 MHz IF SAW Filter 30.21 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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820-IF252
5M-30A
J-STD-020C
2002/95/EC
52MHz
SAW Filter
IF SAW Filter
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF255.0M-29A 255.0 MHz IF SAW Filter 29.66 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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821-IF255
0M-29A
J-STD-020C
2002/95/EC
32MHz
SAW Filter
IF SAW Filter
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF255.0M-29C 255.0 MHz IF SAW Filter 29.18 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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813-IF255
0M-29C
J-STD-020C
2002/95/EC
SAW Filter
IF SAW Filter
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DIN970
Abstract: ZY180L ZY180R
Text: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 11 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j
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1500-0075X2
20100629a
DIN970
ZY180L
ZY180R
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ZY180R
Abstract: UL758 ZY180L C 12 PH diode 1000-01P
Text: VMM 1000-01P VDSS = 100 V ID25 = 1000 A Ω RDS on = 0.75 mΩ Dual Trench MOSFET Module Phaseleg Configuration Preliminary data 3 8 9 1 11 10 2 Features MOSFET T1 + T2 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C ① ① IF25 IF80 (diode) TC = 25°C
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1000-01P
ZY180L
350mm
ZY180R
UL758,
UL758
C 12 PH diode
1000-01P
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smd diode code SL
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Text: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055P3
smd diode code SL
smd diode g6 DIODE S4 39 smd diode
smd diode code g3
SMD mosfet MARKING code TC
S4 SMD Marking Code
SMD MARKING CODE s4
smd diode code g4
smd diode code s3
smd diode marking s4
smd diode S6
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Untitled
Abstract: No abstract text available
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)
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33-06PH
VUM33-06PH
20100921b
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SAW Filter
Abstract: IF SAW Filter
Text: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 821-IF255.0M-29B 255.0 MHz IF SAW Filter 29.66 MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit
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821-IF255
0M-29B
J-STD-020C
2002/95/EC
32MHz
SAW Filter
IF SAW Filter
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Untitled
Abstract: No abstract text available
Text: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 1.9 V RDS(on) = 120 mΩ Part name (Marking on product)
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33-06PH
VUM33-06PH
20100611a
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IF2512-GCB
Abstract: No abstract text available
Text: IF2512-GCB INTERFACE BOARD TECHNICAL GUIDE
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IF2512-GCB
IF2512-GCB
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isoplus mosfet
Abstract: 12V 200A Relay DA QG solar inverter solar inverter circuit starter/generator
Text: FMM 300-0055P ID25 = 300 A = 55 V VDSS Ω RDSon typ. = 2.7 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data T1 5 4 1 1 T2 2 5 Features TVJ = 25°C to TVJmax 55 VGS TC = 25°C TC = 90°C IF25 IF90 body diode TC = 25°C (body diode) TC = 90°C
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300-0055P
isoplus mosfet
12V 200A Relay
DA QG
solar inverter
solar inverter circuit
starter/generator
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1600-02P
Abstract: 1600 v mosfet VMO 1600-02P
Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 200 V ± 20 V 1900 1600 A A ID25 ID80 TC = 25°C TC = 80°C IF25
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1600-02P
14Source
20100302b
1600-02P
1600 v mosfet
VMO 1600-02P
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Untitled
Abstract: No abstract text available
Text: VMM 1500-0075X2 VDSS = 75 V ID25 = 1560 A RDS on = 0.38 mΩ Dual Power MOSFET Module Phaseleg Coniguration 8 9 1 11 10 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j
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1500-0075X2
20100629a
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055P3
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Untitled
Abstract: No abstract text available
Text: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features Maximum Ratings VDSS TVJ = 25°C to 150°C 1000 V VGS TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C (diode) TC = 90°C
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24N100
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35N120D1
Abstract: D-68623 IXER 35N120D1
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
D-68623
IXER 35N120D1
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Untitled
Abstract: No abstract text available
Text: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C
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NTC 303
Abstract: robot control PS18 SV18
Text: VDI 130-06P1 VII 130-06P1 VID 130-06P1 VIO 130-06P1 IC25 = 121 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 B3 PS18 X15 L9 VX18 LMN
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130-06P1
130-06P1
NTC 303
robot control
PS18
SV18
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