IFM VS 0100
Abstract: schema relais sonde ifm VS 0200 relais schema de branchement relais schema data book electronique transistor BU 110 BK-5 SCHEMA BK relay
Text: R Strömungssensoren für den Anschluß an Verstärker SN 0100 4,5 1,5 110 6,9 55 35,5 75 VS 0200 61,2 Auswerteelektronik Anschluß: 1 Sensor 37,5 Klemmschienengehäuse Einsatzbereich Elektrische Ausführung 8,75 Strömungsüberwachung AC Betriebsspannung
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\DATEN\300\DB-FORM--PZD/01/09/94
IFM VS 0100
schema relais sonde
ifm VS 0200
relais schema de branchement
relais schema
data book electronique
transistor BU 110
BK-5
SCHEMA
BK relay
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diode A26C
Abstract: schottky barrier type rectifier 30v 3a EP05Q04 xl marking sod-123 i50112
Text: SILICON RECTIFIER DIODE EClODSl EClODS2 EClODS4 EClODS6 lA/lOO-600V FEATURES Surface Mount Device 0 Miniature Size, thigh Surge Capability OLOW Forward Voltage Drop OLOW Reverse Leakage Current ~Packagedin 12mm Tape and Reel oNot Rolling During Assembly Dimensions
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lA/lOO-600V
EC15QS03
EC15QS04
diode A26C
schottky barrier type rectifier 30v 3a
EP05Q04
xl marking sod-123
i50112
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IGBT abb
Abstract: abb 5sns 0100w120000 IGBT abb datasheets 5SNS 0100W120000 ABB IGBT
Text: VCE IC = = 1200 V 100 A IGBT Module LoPak3 NPT 5SNS 0100W120000 • • • • • Doc. No. 5SYA1511-00 May. 01 Low-loss, rugged IGBT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package Industry standard package
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0100W120000
5SYA1511-00
E63532
swW120000
CH-5600
IGBT abb
abb 5sns 0100w120000
IGBT abb datasheets
5SNS 0100W120000
ABB IGBT
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5SNS 0100W120000
Abstract: abb 5sns 0100w120000
Text: VCE IC = = 1200 V 100 A IGBT Module LoPak3 NPT 5SNS 0100W120000 PRELIMINARY • • • • • Doc. No. 5SYA1511-00 Aug. 00 Low-loss, rugged IGBT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package
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0100W120000
5SYA1511-00
E63532
CH-5600
5SNS 0100W120000
abb 5sns 0100w120000
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PDF
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5SNS0100W120100
Abstract: 5SNS 0100W120100 0100W
Text: VCE IC = = 1200 V 100 A IGBT Module LoPak3 SPT 5SNS 0100W120100 PRELIMINARY • • • • • Doc. No. 5SYA1522-01 May. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package
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0100W120100
5SYA1522-01
E63532
Pt100W120100
CH-5600
5SNS0100W120100
5SNS 0100W120100
0100W
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PDF
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5SNS 0100W120100
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT Module LoPak3 SPT 5SNS 0100W120100 • • • • • Doc. No. 5SYA1522-02 May 02 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package Industry standard package
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0100W120100
5SYA1522-02
E63532
CH-5600
5SNS 0100W120100
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PDF
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HRU0103C
Abstract: No abstract text available
Text: HRU0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0071-0100Z Rev.1.00 Aug.29.2003 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information
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HRU0103C
REJ03G0071-0100Z
HRU0103C
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HRC0103C
Abstract: No abstract text available
Text: HRC0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0069-0100Z Previous: ADE-208-1598 Rev.1.00 Aug.29.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design.
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HRC0103C
REJ03G0069-0100Z
ADE-208-1598)
HRC0103C
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HRD0103C
Abstract: No abstract text available
Text: HRD0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0070-0100Z Previous: ADE-208-1614 Rev.1.00 Aug.29.2003 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Super small Flat Package (SFP) is suitable for surface mount design.
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HRD0103C
REJ03G0070-0100Z
ADE-208-1614)
300prior
HRD0103C
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HRC0201A
Abstract: No abstract text available
Text: HRC0201A Silicon Schottky Barrier Diode for Rectifying REJ03G0618-0100 Previous: ADE-208-1559 Rev.1.00 May 17, 2005 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
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HRC0201A
REJ03G0618-0100
ADE-208-1559)
PWSF0002ZA-A
pe5-900
Unit2607
HRC0201A
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HRL0103C
Abstract: hrl0103
Text: HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0100 Rev.1.00 Aug 19, 2004 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Extremely small Flat Package EFP is suitable for surface mount design.
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HRL0103C
REJ03G0367-0100
HRL0103C
hrl0103
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HSB278S
Abstract: MARK S2
Text: HSB278S Silicon Schottky Barrier Diode for Detector REJ03G0596-0100 Previous: ADE-208-1383 Rev.1.00 Apr 12, 2005 Features • Low forward voltage, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information
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HSB278S
REJ03G0596-0100
ADE-208-1383)
PTSP0003ZB-A
temperat5-900
Unit2607
HSB278S
MARK S2
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HSU119
Abstract: No abstract text available
Text: HSU119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0190-0100Z Previous: ADE-208-444 Rev.1.00 Mar.22.2004 Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr =3.0 ns max) • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
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HSU119
REJ03G0190-0100Z
ADE-208-444)
HSU119
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HSS4148
Abstract: No abstract text available
Text: HSS4148 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator REJ03G0404-0100 Rev.1.00 Sep 17, 2004 Features • Low capacitance. C = 4.0 pF max • Short reverse recovery time. (trr = 4.0 ns max) • Suitable for 5mm-pitch high speed automatic insertion.
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HSS4148
REJ03G0404-0100
peak-900
Unit2607
HSS4148
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HSB83YP
Abstract: PTSP0004ZB-A SC-82
Text: HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0545-0100 Previous: ADE-208-843 Rev.1.00 Mar 04, 2005 Features • High reverse voltage. (VR = 250 V) • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting.
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HSB83YP
REJ03G0545-0100
ADE-208-843)
PTSP0004ZB-A
for5-900
Unit2607
HSB83YP
PTSP0004ZB-A
SC-82
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HSC119
Abstract: No abstract text available
Text: HSC119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0188-0100Z Previous: ADE-208-615 Rev.1.00 Mar.22.2004 Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr = 3.0 ns max) • Ultra small Flat Package (UFP) is suitable for surface mount design.
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HSC119
REJ03G0188-0100Z
ADE-208-615)
HSC119
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6887
Abstract: HSD119 PUSF0002ZB-A
Text: HSD119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G1309-0100 Rev.1.00 Oct 27, 2005 Features • Low capacitance. C = 2.0 pF max • Short reverse recovery time. (trr = 3.0 ns max) • Super small Flat Lead Package (SFP) is suitable for surface mount design.
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HSD119
REJ03G1309-0100
PUSF0002ZB-A
6887
HSD119
PUSF0002ZB-A
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HSN278WK
Abstract: PUSF0003ZA-A SC-89
Text: HSN278WK Silicon Epitaxial Schottky Barrier Diode for Detector REJ03G0611-0100 Previous: ADE-208-1524 Rev.1.00 Sep 13, 2005 Features • Low forward voltage, Low capacitance. • Miniature Flat Lead Package (MFPAK) is suitable for surface mount design. Ordering Information
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HSN278WK
REJ03G0611-0100
ADE-208-1524)
PUSF0003ZA-A
HSN278WK
PUSF0003ZA-A
SC-89
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HSM122
Abstract: SC-59A
Text: HSM122 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G1299-0100 Rev.1.00 Oct 27, 2005 Features • High reverse voltage. VR = 400 V • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information
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HSM122
REJ03G1299-0100
PLSP0003ZC-A
HSM122
SC-59A
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PTSP0002ZA-A
Abstract: RKS101KG
Text: RKS101KG Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G1758-0100 Rev.1.00 Nov 28, 2008 Features • Short reverse recovery time enable fast switching. • Ultra small Resin Package URP is suitable for compact and high-density surface mount design.
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RKS101KG
REJ03G1758-0100
REJ03G1758-0100
PTSP0002ZA-A
PTSP0002ZA-A
RKS101KG
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gmZ2A
Abstract: Genesis gmZ2A DAT-0007-B Tvga gmFC1A gmz2 Genesis Microchip osd GENESIS
Text: DATA SHEET gmZ2A DAT-0007-B June 1999 Genesis Microchip 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 1871 Landings Drive •Mountain View •CA •USA •94043 •Tel: (650) 428-4277 •Fax: (650) 428-4288
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DAT-0007-B
DAT-0007-A
DAT-0007-B
rgb10
rgb11
208-pin
gmZ2A
Genesis gmZ2A
Tvga
gmFC1A
gmz2
Genesis Microchip osd
GENESIS
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SHARP gl5
Abstract: A25X1
Text: SHARP LED Lamps 51E P 01007114 • GL5 CORP OOOb^MT G L5DD49 6D b 49 Series I Model No. Series ■ SRPJ 05mm T-1% Cylinder Type LED Lamps j - t + i - 2- l ■ Outline Dimensions (Unit: mm) GL5LR49 Red (High-luminosity) GaAlAs/GaAs GL5EG49 Yellow-green GaP
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OCR Scan
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L5DD49
GL5LR49
GL5EG49
110X110
150X150
180X180
200X200
SHARP gl5
A25X1
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circuit diagram for photointerrupter
Abstract: GP1S53 s53 photo T-41-73 Photointerrupter tr Sharp S53 4173 S53 Sharp
Text: SHARP ELEK/ M ELEC O IV iS E D | ä lflO T T a Photointerrupter _ GP1S53 G0G323S T-41-73 GP1S53 Compact PotointerruDter Fe a tu re s • O u tlin e D im e n s io n s 1. Compact type 2. High sensing accuracy Slilt width: 0.5mm
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OCR Scan
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Q00323S
GP1S53
T-41-73
circuit diagram for photointerrupter
GP1S53
s53 photo
T-41-73
Photointerrupter tr
Sharp S53
4173
S53 Sharp
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SHARP EL
Abstract: sharp gp1s53 GP1S53
Text: SHARP ELEK/ M ELEC O IV iS E D | 61307=13 QDQ323S T | Photointerrupter GP1S53 _ GP1S53 • T -4 1 -7 3 _ Compact PotointerruDter F e a tu re s ■ O u t lin e D im e n s io n s U n it: mm 1. Compact type
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OCR Scan
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QDQ323S
GP1S53
SHARP EL
sharp gp1s53
GP1S53
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