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    IGBT, PASSIVATION Search Results

    IGBT, PASSIVATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    GCM033C70J104KE02J Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 6.3Vdc 0.1μF±10% Visit Murata Manufacturing Co Ltd
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    IGBT, PASSIVATION Price and Stock

    Abracon Corporation ABM3B-138-24.000MHZ-T

    Passive Components, Crystals
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    Onlinecomponents.com ABM3B-138-24.000MHZ-T 10,000
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    TE Connectivity D-SCE-1K-3.2-50-3-CS8766

    Heat Sink Passive
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    Onlinecomponents.com D-SCE-1K-3.2-50-3-CS8766 2,000
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    Staffall 460S-9404-PASSIVATED

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 460S-9404-PASSIVATED 750
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    Staffall 4538-632-SS-20

    Hex Standoff, #6-32 Thrd Sz, 1/4 in Thrd L Stainless Steel Passivated, 1/4" Hex W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 4538-632-SS-20 675
    • 1 $2.78
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    CTS Corporation CHT70C0183MLT

    High temperature HCMOS Clock - 1.8 MHz - ±50ppm Frequency Stability - +3.3Vdc Supply - Ceramic Surface Mount Package - 1k Pcs./Reel.
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    Onlinecomponents.com CHT70C0183MLT 50
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    Find more IGBT, PASSIVATION price and stock on Findchips.com

    IGBT, PASSIVATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT120GR120D APT120GR120D 1200V, 120A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT Die The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and


    Original     		APT120GR120D PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12K1721 CH-5600 12K1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12M1730 CH-5600 PDF

    5SMY 12J1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-02 11 02 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12J1721 CH-5600 12J1721 5SMY 12J1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-02 11 02 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12G1721 CH-5600 12G1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1318-01 11 06 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: alpha-Si and Silicon Nitride plus Polyimide Maximum rated values Parameter


    Original     		12M1721 CH-5600 PDF

    169800

    Abstract: 12M6501
    Text: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12M6501 CH-5600 169800 PDF

    12M1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original     		12M1721 CH-5600 12M1721 PDF

    5SMY 12J1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12J1721 CH-5600 5SMY 12J1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12K1721 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-01 12 01 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12G1721 CH-5600 PDF

    5SMY 86G1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1324-03 04 14 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12G1721 CH-5600 5SMY 86G1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-01 12 01 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12M1721 CH-5600 PDF

    5SMY 86M1730

    Abstract: ac130
    Text: Data Sheet, Doc. No. 5SYA 1695-03 04 14 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12M1730 CH-5600 5SMY 86M1730 ac130 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12M1721 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1325-03 04 14 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original     		12J1721 CH-5600 PDF

    12K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12K1280 CH-5600 12K1280 PDF

    132102

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12J1280 CH-5600 132102 PDF

    12M1280

    Abstract: 5SMY12M1280
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12M1280 CH-5600 12M1280 5SMY12M1280 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12J1280 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12M1280 CH-5600 PDF

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original     		12N4501 CH-5600 abb press-pack igbt PDF

    76K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12K1280 CH-5600 76K1280 PDF

    MJ86

    Abstract: 57 A
    Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12H1280 CH-5600 MJ86 57 A PDF