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Abstract: No abstract text available
Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and
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FGL60N100BNTD
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Untitled
Abstract: No abstract text available
Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and
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FGL60N100BNTD
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Untitled
Abstract: No abstract text available
Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers
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FGA50N100BNTD
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RG 2006 10A 600V
Abstract: ups active power easy 600 igbt 1000v 10A FGA50N100BN
Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers
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FGA50N100BNTD
FGA50N100BNTD
RG 2006 10A 600V
ups active power easy 600
igbt 1000v 10A
FGA50N100BN
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Untitled
Abstract: No abstract text available
Text: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,
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FGH40T100SMD
25oductor
FGH40T100SMD
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FGH40T100SMD
Abstract: fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE
Text: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,
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FGH40T100SMD
FGH40T100SMD
fgh40t100
W10K
AC welder IGBT circuit
IGBT 1000V .200A
igbt 1000v 80a
DBVCE
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igbt induction cooker
Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for
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FGA50N100BNTD
FGA50N100BNTD
FGA50N100BNTDTU
igbt induction cooker
FGA50N100
"induction cooker" circuit
induction cooker circuit with IGBT
induction heating cooker
IC for induction cooker
IGBT 600V 30A TO-3P
IGBT 1000V 60A
BNTD
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igbt induction cooker
Abstract: induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A
Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for
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FGA50N100BNTD
igbt induction cooker
induction cooker
igbt 1000v 30a
induction cooker circuit with IGBT
IGBT 1000V .50A
induction heating cooker
fairchild induction cooker
igbt for induction cooker
FGA50N100BNTDTU
IGBT 60A
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fairchild induction cooker
Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for
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FGA50N100BNTD
FGA50N100BNTD
fairchild induction cooker
induction cooker circuit with IGBT
igbt induction cooker
FGA50N100BNTDTU
igbt 1000v 30a
induction cooker
IC for induction cooker
FGA50N100BN
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RURG80100
Abstract: No abstract text available
Text: RURG80100 Data Sheet January 2000 File Number 3371.3 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG80100
RURG80100
125ns)
125ns
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RURU80100
Abstract: No abstract text available
Text: RURU80100 Data Sheet January 2000 File Number 3375.3 80A, 1000V Ultrafast Diode Features The RURU80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU80100
RURU80100
125ns)
125ns
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CM200DY-34A
Abstract: CM-200 IGBT 1000V .200A application note
Text: MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC . 200A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
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CM200DY-34A
CM200DY-34A
CM-200
IGBT 1000V .200A application note
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cm200dy-34a
Abstract: IGBT 1000V .200A
Text: MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC . 200A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
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CM200DY-34A
063K/W
cm200dy-34a
IGBT 1000V .200A
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RURG80100
Abstract: No abstract text available
Text: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG80100
125ns)
125ns
175oC
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RURU80100
Abstract: No abstract text available
Text: RURU80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURU80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU80100
RURU80100
125ns)
125ns
175oC
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Untitled
Abstract: No abstract text available
Text: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG80100
RURG80100
125ns)
125ns
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RURG80100
Abstract: No abstract text available
Text: RURG80100 Data Sheet January 2000 File Number 3371.3 80A, 1000V Ultrafast Diode Features Title UR 010 The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG80100
RURG80100
125ns)
125ns
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CM200DU-34KA
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC . 200A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack
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CM200DU-34KA
CM200DU-34KA
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Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM200DU-34KA ● IC . 200A ● VCES . 1700V
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CM200DU-34KA
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC . 200A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack
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CM200DU-34KA
CM200DU-34KA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM200DU-34KA ● IC . 200A ● VCES . 1700V
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Abstract: No abstract text available
Text: CM200DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 P P Q Description: Powerex IGBTMOD™ Modules
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CM200DY-34A
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CM200DY-34A
Abstract: No abstract text available
Text: CM200DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 P P Q Description: Powerex IGBTMOD™ Modules
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CM200DY-34A
Amperes/1700
CM200DY-34A
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cm200dy-34a
Abstract: No abstract text available
Text: CM200DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 P P Q Description: Powerex IGBTMOD™ Modules
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CM200DY-34A
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cm200dy-34a
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