Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBT 100W Search Results

    IGBT 100W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 100W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smps 500W

    Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
    Text: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT


    Original     		PDF 100kHz 100kHz HGTG12N60A4 O-252AA O-220AB T0-263AB O-268 Breakdown/10 100ns 200ns smps 500W smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT

    DM2G75SH6N

    Abstract: cvcf
    Text: DM2G75SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DM2G75SH6N Fig14. DM2G75SH6N cvcf

    DL2G75SH6N

    Abstract: dawin
    Text: DL2G75SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		PDF DL2G75SH6N Fig14. DL2G75SH6N dawin

    FMG2G75US60

    Abstract: No abstract text available
    Text: IGBT FMG2G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		PDF FMG2G75US60 E209204 FMG2G75US60

    FMG2G75US60

    Abstract: No abstract text available
    Text: IGBT FMG2G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		PDF FMG2G75US60 E209204 FMG2G75US60

    IHW30N90R

    Abstract: H30R90
    Text: Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior


    Original     		PDF IHW30N90R PG-TO-247-3 IHW30N90R H30R90

    CIRCUIT DIAGRAM UPS

    Abstract: dc servo igbt diagram FMG2G75US60
    Text: IGBT FMG2G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		PDF FMG2G75US60 E209204 CIRCUIT DIAGRAM UPS dc servo igbt diagram FMG2G75US60

    h30r90

    Abstract: 1202-9 diode IGBT K 40 T 1202 IHW30N90R 600v 30a IGBT igbt to247 PG-TO-247-3-21
    Text: Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior


    Original     		PDF IHW30N90R PG-TO-247-3-21 h30r90 1202-9 diode IGBT K 40 T 1202 IHW30N90R 600v 30a IGBT igbt to247 PG-TO-247-3-21

    FMBH1G75US60

    Abstract: No abstract text available
    Text: IGBT FMBH1G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		PDF FMBH1G75US60 E209204 FMBH1G75US60

    Untitled

    Abstract: No abstract text available
    Text: IGBT FMG1G75US60L Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		PDF FMG1G75US60L E209204

    FMBL1G75US60

    Abstract: Diode 1e3
    Text: IGBT FMBL1G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		PDF FMBL1G75US60 E209204 FMBL1G75US60 Diode 1e3

    PG-TO-247-3

    Abstract: h30r90
    Text: Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior


    Original     		PDF IHW30N90R H30R90 PG-TO-247-3 PG-TO-247-3

    Untitled

    Abstract: No abstract text available
    Text: IGBT FMG1G75US60H Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


    Original     		PDF FMG1G75US60H E209204

    h30r90

    Abstract: PG-TO-247-3 1202-9 diode IGBT 900v 60a IHW30N90R Ir 900v 60a
    Text: Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior


    Original     		PDF IHW30N90R PG-TO-247-3 30tances. h30r90 PG-TO-247-3 1202-9 diode IGBT 900v 60a IHW30N90R Ir 900v 60a

    h30r90

    Abstract: IHW30N90R
    Text: Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • TrenchStop and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior


    Original     		PDF IHW30N90R H30R90 PG-TO-247-3-21 PG-TO-247-3-21

    FGL40N120AND

    Abstract: 100W UPS FGL40N120AN IH 001
    Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor


    Original     		PDF FGL40N120AN O-264 FGL40N120AND FGL40N120AND 100W UPS FGL40N120AN IH 001

    Untitled

    Abstract: No abstract text available
    Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor


    Original     		PDF FGL40N120AN FGL40N120AN O-264

    Untitled

    Abstract: No abstract text available
    Text: IGBT FGH40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor


    Original     		PDF FGH40N120AN FGH40N120AN

    Untitled

    Abstract: No abstract text available
    Text: IGP50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters


    Original     		PDF IGP50N60T

    FAIRCHILD FGL40N120AN

    Abstract: FGL40N120AN
    Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor


    Original     		PDF FGL40N120AN O-264 FAIRCHILD FGL40N120AN FGL40N120AN

    FGL40N120

    Abstract: FGL40N120ANTU FAIRCHILD FGL40N120AN
    Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor


    Original     		PDF FGL40N120AN FGL40N120AN O-264 FGL40N120ANTU FGL40N120 FAIRCHILD FGL40N120AN

    h30r90

    Abstract: No abstract text available
    Text: Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • TrenchStop and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior


    Original     		PDF IHW30N90R H30R90 PG-TO-247-3-21 PG-TO-247-3-21

    Untitled

    Abstract: No abstract text available
    Text: IGW50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters


    Original     		PDF IGW50N60T

    FM2G75US60

    Abstract: No abstract text available
    Text: IGBT FM2G75US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is


    Original     		PDF FM2G75US60 FM2G75US60