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    IGBT 200 A Search Results

    IGBT 200 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP65S08DWA-00#W0 Renesas Electronics Corporation IGBT 650V 200A Wafer Visit Renesas Electronics Corporation
    RJP65S08DWT-00#X0 Renesas Electronics Corporation IGBT 650V 200A Chip Visit Renesas Electronics Corporation
    RJP65S08DWT-80#X0 Renesas Electronics Corporation IGBT 650V 200A Chip Visit Renesas Electronics Corporation
    RJP1CS08DWT-80#X0 Renesas Electronics Corporation IGBT 1250V 200A Chip Visit Renesas Electronics Corporation
    RJP1CS08DWS-80#W0 Renesas Electronics Corporation IGBT 1250V 200A Sawn Visit Renesas Electronics Corporation

    IGBT 200 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Full-bridge forward inverter

    Abstract: SCR gate Control IC SCR 100A
    Text: QIA0620004 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an additional SCR. The Aluminum Silicon


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    PDF QIA0620004 MIL-PRF-38534 -400A/ Full-bridge forward inverter SCR gate Control IC SCR 100A

    E78996 datasheet bridge

    Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    PDF GA200TS60UPbF E78996 2002/95/EC 18-Jul-08 E78996 datasheet bridge E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF

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    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    PDF GA200TS60UPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    E78996 diode

    Abstract: No abstract text available
    Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    PDF GA200TS60UPbF E78996 2002/95/EC 11-Mar-11 E78996 diode

    SCR 100A

    Abstract: SCR gate Control IC Full-bridge forward inverter scr inverter SCR Gate Drive turn off SCR 600V GE SCR SCR 50A SCR Inverter datasheet GE power SCR datasheet
    Text: QIA0620004 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an


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    PDF QIA0620004 MIL-PRF-38534 -400A/ SCR 100A SCR gate Control IC Full-bridge forward inverter scr inverter SCR Gate Drive turn off SCR 600V GE SCR SCR 50A SCR Inverter datasheet GE power SCR datasheet

    Full-bridge inverter

    Abstract: SCR gate Control IC scr dc motor forward reverse control SCR 100A
    Text: QIA0620004 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an


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    PDF QIA0620004 MIL-PRF-38534 -400A/S Full-bridge inverter SCR gate Control IC scr dc motor forward reverse control SCR 100A

    igbt control servo motor

    Abstract: No abstract text available
    Text: QIR0620001 Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 724 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT


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    PDF QIR0620001 Amperes/600 2025kHz) igbt control servo motor

    DIODE i2t

    Abstract: QIQ0645001 48025f
    Text: QIQ0645001 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy


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    PDF QIQ0645001 DIODE i2t QIQ0645001 48025f

    Untitled

    Abstract: No abstract text available
    Text: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package


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    PDF GA200HS60S1PbF E78996 2002/95/EC 11-Mar-11

    VS-GA200HS60S1PBF

    Abstract: No abstract text available
    Text: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package


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    PDF VS-GA200HS60S1PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA200HS60S1PBF

    Untitled

    Abstract: No abstract text available
    Text: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package


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    PDF GA200HS60S1PbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF I27243 GA100TS120UPbF GA100TS120UPBF

    E78996

    Abstract: GA200HS60S1PBF E78996 datasheet bridge GA200HS60S1 tig welding machine tig welding 30EPH06 e78996 italy tig welding half bridge
    Text: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package


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    PDF GA200HS60S1PbF E78996 2002/95/EC 18-Jul-08 E78996 GA200HS60S1PBF E78996 datasheet bridge GA200HS60S1 tig welding machine tig welding 30EPH06 e78996 italy tig welding half bridge

    GA400TD60U

    Abstract: No abstract text available
    Text: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Feature Featuress VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF GA400TD60U GA400TD60U

    GA100TS120U

    Abstract: No abstract text available
    Text: PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    PDF 50060B GA100TS120U T52-7105 GA100TS120U

    GA100TS120U

    Abstract: 18672
    Text: PD - 5.060 PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    PDF GA100TS120U GA100TS120U 18672

    GA200TD120U

    Abstract: No abstract text available
    Text: PD - 50061D GA200TD120U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    PDF 50061D GA200TD120U GA200TD120U

    Untitled

    Abstract: No abstract text available
    Text: International I , i • I M R Rectifier PD -5.058B p r e l im in a r y "HALF-BRIDGE" IGBT INT-A-PAK GA 200 T S 60 U Ultra-Fast Speed IGBT Feat ures V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    Untitled

    Abstract: No abstract text available
    Text: International lORRectifi G f PD - 5.047B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Features V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200


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    PDF GA250TS60U

    Untitled

    Abstract: No abstract text available
    Text: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    PDF GA500TD60U

    GA150TS60U

    Abstract: 150TS60U
    Text: International 3BSR Rectifi6r preliminary "HALF-BRIDGE" IGBT INT-A-PAK PD'5056 G A 150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    PDF 150TS60U GA150TS60U 150TS60U

    irf p 1806

    Abstract: No abstract text available
    Text: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    PDF GA400TD60U irf p 1806

    iu728

    Abstract: No abstract text available
    Text: International ISgR Rectifier preliminary "HALF-BRIDGE" IGBT INT-A-PAK PD'5047A GA250TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V c e s = 60 0V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    PDF GA250TS60U iu728

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier PD - 5.047B PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Fe at ur es • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    PDF GA250TS60U