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    IGBT 200V 20A Search Results

    IGBT 200V 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 200V 20A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA90N33AT tm 330V, 90A PDP Trench IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.1V @ IC = 20A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


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    FGA90N33AT FGA90N33AT PDF

    SGH40N60UFD

    Abstract: No abstract text available
    Text: N-CHANNEL IGBT SGH40N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls


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    SGH40N60UFD SGH40N60UFD PDF

    SGH20N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls


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    SGH20N60RUFD 25duct SGH20N60RUFD PDF

    200v dc motor igbt

    Abstract: SGF40N60UFD
    Text: CO-PAK IGBT SGF40N60UFD FEATURES TO-3PF * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls


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    SGF40N60UFD 200v dc motor igbt SGF40N60UFD PDF

    SGL20N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGL20N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls


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    SGL20N60RUFD O-264 SGL20N60RUFD PDF

    DC Motor control IGBT FUJI ELECTRIC

    Abstract: 1MBH20D-060 fuji electric fuji igbt fuji servo drive fuji igbt 300v 20a igbt 600v 20a igbt catalog FUJI
    Text: 1MBH20D-060 Molded IGBT 600V / 20A Molded Package Features ・Small molded package ・Low power loss ・Soft switching with low switching surge and noise ・High reliability, high ruggedness RBSOA, SCSOA etc. ・Comprehensive line-up Applications ・Inverter for Motor drive


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    1MBH20D-060 Ic110 DC Motor control IGBT FUJI ELECTRIC 1MBH20D-060 fuji electric fuji igbt fuji servo drive fuji igbt 300v 20a igbt 600v 20a igbt catalog FUJI PDF

    tc122 25

    Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060


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    1MBG05D-060 1MBC05-060 1MBC05D-060 1MBH05D-060 1MBG10D-060 1MBC10-060 1MBC10D-060 1MBH10D-060 1MBC15-060 1MB15D-060 tc122 25 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060 PDF

    igbt 200v 20a

    Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900


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    1MBH60D-090A 1MBH65D-090A ERW01-060 ERW02-060 ERW03-060 ERW04-060 ERW05-060 ERW06-060 ERW07-120 O-220AB igbt 200v 20a tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060 PDF

    Mitsubishi IPM 20A

    Abstract: Mitsubishi IPM module ELECTROLYTIC capacitor, 1000 uF 300V PM52AUBW060 PM52AUB PM52A PWM DRIVE control 100V 20A
    Text: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Active <Active Filter Filter Intelligent Intelligent Power Power Module> Module> PM52AUBW060 PM52AUBW060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM52AUBW060 OUTLINE AND RATING • A/F IPM Input Current Rating Ii: 100% load: 20A rms


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    PM52AUBW060 Mitsubishi IPM 20A Mitsubishi IPM module ELECTROLYTIC capacitor, 1000 uF 300V PM52AUBW060 PM52AUB PM52A PWM DRIVE control 100V 20A PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.


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    FGA180N30D FGA180N30D FGA180N30DTU PDF

    igbt 300V 10A datasheet

    Abstract: FGA180N30D IGBT 40A
    Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.


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    FGA180N30D FGA180N30D igbt 300V 10A datasheet IGBT 40A PDF

    igbt 300V 10A datasheet

    Abstract: c3228 FGA180N30D
    Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.


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    FGA180N30D FGA180N30D igbt 300V 10A datasheet c3228 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.


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    FGA180N30D FGA180N30D PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    VQE 22

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V


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    IRGPH40S O-247AC VQE 22 PDF

    C1030 transistor

    Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
    Text: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses


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    IRGPH50KD2 -10jjs C-1035 O-247AC C-1036 C1030 transistor c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1032 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGH20N60RUFD CO-PAK IGBT FEATURES TO-3P * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) 1 APPLICATIONS * AC & DC Motor controls


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    SGH20N60RUFD PDF

    igbt 45 f 122

    Abstract: igbt 200v 20a 200v dc motor igbt
    Text: SGH40N60UFD N-CHANNEL IGBT FEATURES TO-3P * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) # APPLICATIONS 0 C * AC & DC Motor controls * General Purpose Inverters


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    SGH40N60UFD igbt 45 f 122 igbt 200v 20a 200v dc motor igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGL20N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) APPLICATIONS * * * * * AC & DC Motor controls


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    SGL20N60RUFD O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGL20N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr= 50nS (Typ) APPLICATIONS * AC & DC Motor controls


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    SGL20N60RUFD PDF

    Untitled

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGF40N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls


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    SGF40N60UFD PowGF40N60UFD PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL IGBT SGH40N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls


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    SGH40N60UFD PDF

    Untitled

    Abstract: No abstract text available
    Text: SGH20N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10|is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) APPLICATIONS * * * * * AC & DC Motor controls


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    SGH20N60RUFD 220arge PDF

    SGH40N60UFD

    Abstract: igbt for induction heating
    Text: SGH40N60UFD IGBT CO-PAK FEATURES TO-3P ^ * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance * CO-PAK, IGBT with FRD :Trr = 42nS (Typ) \\ 1 APPLICATIONS AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls


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    SGH40N60UFD O-220-F-4L DD3b33E 003b333 SGH40N60UFD igbt for induction heating PDF