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    IGBT 300V 10A DATASHEET Search Results

    IGBT 300V 10A DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 300V 10A DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SME6G10US60 IGBT

    Abstract: igbt 300V 10A datasheet SME6G10US60
    Text: Preliminary SME6G10US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.1 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * General Purpose Inverters * UPS, CVCF * Robotics , Servo Controls


    Original     		PDF SME6G10US60 17-PM-BA SME6G10US60 IGBT igbt 300V 10A datasheet SME6G10US60

    SGL10N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGL10N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 1.95 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		PDF SGL10N60RUFD O-264 SGL10N60RUFD

    SGH10N60RUFD

    Abstract: No abstract text available
    Text: CO-PAK IGBT SGH10N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 1.95 V @ IC=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42ns (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		PDF SGH10N60RUFD SGH10N60RUFD

    SGS10N60RUFD

    Abstract: 200v dc motor igbt
    Text: CO-PAK IGBT SGS10N60RUFD FEATURES TO-220F * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V @ IC=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls


    Original     		PDF SGS10N60RUFD O-220F SGS10N60RUFD 200v dc motor igbt

    SGP10N60RUF

    Abstract: No abstract text available
    Text: SGP10N60RUF FEATURES N-CHANNEL IGBT TO-220 * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 1.95 V @ IC=10A * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls


    Original     		PDF SGP10N60RUF O-220 SGP10N60RUF

    igbt 300V 30A

    Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
    Text: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


    Original     		PDF FGPF30N30TD O-220F FGPF30N30TD igbt 300V 30A igbt 300V 10A datasheet igbt 200v 20a

    igbt 300V 10A datasheet

    Abstract: igbt 200v 20a FGFP30N30DTU FGPF30N30D RG601 igbt 200v 30a
    Text: FGPF30N30D 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential.


    Original     		PDF FGPF30N30D O-220F igbt 300V 10A datasheet igbt 200v 20a FGFP30N30DTU FGPF30N30D RG601 igbt 200v 30a

    Untitled

    Abstract: No abstract text available
    Text: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGA90N30D FGA90N30D FGA90N30DTU

    FGA90N30D

    Abstract: No abstract text available
    Text: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGA90N30D FGA90N30D

    igbt 300V 10A datasheet

    Abstract: FGA90N30D
    Text: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGA90N30D FGA90N30D igbt 300V 10A datasheet

    Untitled

    Abstract: No abstract text available
    Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGA180N30D FGA180N30D FGA180N30DTU

    IHCS22R60CE

    Abstract: IGBT DRIVER SCHEMATIC 3 PHASE
    Text: Data sheet, May 2009 Control integrated Power System CIPOS IHCS22R60CE Two Phase Switched Reluctance Drives Power Management & Drives N e v e r s t o p t h i n k i n g . CIPOS™ IHCS22R60CE Control integrated Power System (CIPOS™) Revision History:


    Original     		PDF IHCS22R60CE IHCS22R60CE IGBT DRIVER SCHEMATIC 3 PHASE

    FGA70N30TD

    Abstract: No abstract text available
    Text: FGA70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


    Original     		PDF FGA70N30TD FGA70N30TD

    IHCS22R60CE

    Abstract: No abstract text available
    Text: Data sheet, November 2008 Control integrated Power System CIPOS IHCS22R60CE Two Phase Switched Reluctance Drives Po we r Ma n a g e me n t & Dri ve s N e v e r s t o p t h i n k i n g . CIPOS™ IHCS22R60CE Control integrated Power System (CIPOS™) Revision History:


    Original     		PDF IHCS22R60CE IHCS22R60CE

    Untitled

    Abstract: No abstract text available
    Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGA180N30D FGA180N30D

    igbt 300V 10A datasheet

    Abstract: FGA180N30D IGBT 40A
    Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGA180N30D FGA180N30D igbt 300V 10A datasheet IGBT 40A

    igbt 300V 10A datasheet

    Abstract: c3228 FGA180N30D
    Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGA180N30D FGA180N30D igbt 300V 10A datasheet c3228

    igbt 300V 10A datasheet

    Abstract: SMC6G10US60 diode code GW 17
    Text: Preliminary SMC6G10US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in 3 Rectifier Circuit & k Package code : 21-PM-AA


    Original     		PDF SMC6G10US60 21-PM-AA igbt 300V 10A datasheet SMC6G10US60 diode code GW 17

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SMC7G10US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit


    Original     		PDF SMC7G10US60 21-PM-AA 20oduct

    fga120n30d

    Abstract: No abstract text available
    Text: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGA120N30D FGA120N30D 40ild FGA120N30DTU

    igbt 300V 10A datasheet

    Abstract: SMC7G10US60 MJ 800
    Text: Preliminary SMC7G10US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit


    Original     		PDF SMC7G10US60 21-PM-AA igbt 300V 10A datasheet SMC7G10US60 MJ 800

    FGPF70N30TD

    Abstract: igbt 300V 10A datasheet
    Text: FGPF70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


    Original     		PDF FGPF70N30TD O-220F FGPF70N30TD igbt 300V 10A datasheet

    FGPF30N30

    Abstract: No abstract text available
    Text: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution


    Original     		PDF FGPF30N30 FGPF30N30 O-220F

    C1220A

    Abstract: igbt 300V 10A datasheet FGPF30N30
    Text: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution


    Original     		PDF FGPF30N30 FGPF30N30 O-220F 100oC C1220A igbt 300V 10A datasheet