IGBT 318 Search Results

132-gd

Abstract: 132 gd 120 24v 125A IGBT Igbt 318
Contextual Info: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

132 gd 120

Abstract: skiip gd 120 semikron skiip 33 SKIIP DRIVER GD 132-gd semikron skiip 132 GDL
Contextual Info: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Contextual Info: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.

Contextual Info: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications

Contextual Info: Ordering number : EN*A2308 NGTB30N60L2WG Advance Information http://onsemi.com N-Channel IGBT 600V, 100A, VCE sat ;1.4V TO-247-3L with Low VF Switching Diode Electrical Connection C(2) Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT tf=80ns typ.

Fast Recovery Bridge Rectifier, 60A, 600V

Abstract: APT10035LLL APT64GA90LD30 MIC4452
Contextual Info: APT64GA90LD30 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT64GA90B

Abstract: MIC4452 DIODE 76A
Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT64GA90B

Abstract: MIC4452 DIODE 76A
Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

diode 300v 20a

Abstract: diode 20a 300v
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Abstract: diode 528
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

E3224

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

132-gd

Abstract: TR 132-GD 132 gd 120 132Gd 120 132Gd 132 gd SKIIP GD Igbt 318
Contextual Info: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C

Contextual Info: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: 20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • FRED Pt hyperfast rectifier

IXDD 614

Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Contextual Info: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers

Contextual Info: VS-20MT060KF www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • FRED Pt hyperfast rectifier

Contextual Info: 20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • FRED Pt hyperfast rectifier

E78996 rectifier module

Contextual Info: 20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • FRED Pt hyperfast rectifier

AN-994

Abstract: IRG4RC10S
Contextual Info: PD - 91732A IRG4RC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter