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    IGBT 500A 1200V Search Results

    IGBT 500A 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 500A 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIM500GCM33-TS000

    Abstract: DIM500GCM33-TS
    Text: DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-2 DS6098-3 September 2014 LN31960 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM500GCM33-TS000 DS6098-2 DS6098-3 LN31960) 65ames DIM500GCM33-TS000 DIM500GCM33-TS

    Untitled

    Abstract: No abstract text available
    Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DIM500GCM33-TS000 DS6098-1 LN30465) 2400ames

    DIM500GCM33-TL000

    Abstract: DIM500GCM33-TL
    Text: DIM500GCM33-TL000 IGBT Chopper Module Replaces DS6114-1 DS6114-2 January 2014 LN31264 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		PDF DIM500GCM33-TL000 DS6114-1 DS6114-2 LN31264) DIM500GCM33-TL000 DIM500GCM33-TL

    Untitled

    Abstract: No abstract text available
    Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DIM500GCM33-TS000 DS6098-1 LN30465) 2400ames

    Untitled

    Abstract: No abstract text available
    Text: DIM500GCM33-TL000 IGBT Chopper Module DS6114-1 July 2013 LN30663 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		PDF DIM500GCM33-TL000 DS6114-1 LN30663)

    68nF

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF

    68nf

    Abstract: diode 500A IGBT FF 300 IC800
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF

    DIM500GDM33-TS000

    Abstract: DIM500GDM33-TS
    Text: DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-2 DS6097-3 September 2014 LN31961 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC


    Original     		PDF DIM500GDM33-TS000 DS6097-2 DS6097-3 LN31961) DIM500GDM33-TS000 DIM500GDM33-TS

    Untitled

    Abstract: No abstract text available
    Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DIM500GDM33-TS000 DS6097-1 LN30461)

    Untitled

    Abstract: No abstract text available
    Text: DIM500GDM33-TL000 Dual Switch IGBT Module DS6113-1 July 2013 LN30662 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		PDF DIM500GDM33-TL000 DS6113-1 LN30662)

    DIM500GDM33-TL000

    Abstract: DIM500GDM33-TL DS61132
    Text: DIM500GDM33-TL000 Dual Switch IGBT Module Replaces DS6113-1 DS6113-2 January 2014 LN31251 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 


    Original     		PDF DIM500GDM33-TL000 DS6113-1 DS6113-2 LN31251) DIM500GDM33-TL000 DIM500GDM33-TL DS61132

    Untitled

    Abstract: No abstract text available
    Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DIM500GDM33-TS000 DS6097-1 LN30461)

    LM 949

    Abstract: DIM500BSS12-H000 transistor 600v 500a
    Text: DIM500BSS12-H000 DIM500BSS12-H000 Fast Single Switch IGBT Module Target Infomation DS5643-1.2 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) † (max) IC


    Original     		PDF DIM500BSS12-H000 DS5643-1 20kHz DIM500BSS12-H000 LM 949 transistor 600v 500a

    IC LM 2003

    Abstract: No abstract text available
    Text: DIM500BSS12-H000 DIM500BSS12-H000 Fast Single Switch IGBT Module Target Infomation DS5643-2.0 September 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) † (max)


    Original     		PDF DIM500BSS12-H000 DS5643-2 20kHz DIM500BSS12-H000 IC LM 2003

    K30120G3

    Abstract: ISL9K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps
    Text: ISL9K30120G3 30A, 1200V Stealth Dual Diode General Description Features The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current


    Original     		PDF ISL9K30120G3 ISL9K30120G3 K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps

    diode 500A

    Abstract: diode 500A 1200v
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical


    Original     		PDF ISL9R30120G2 ISL9R30120G2 120lopment.

    diode 500A

    Abstract: IGBT 500A 1200V FF51
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage


    Original     		PDF

    SKIIP DRIVER

    Abstract: No abstract text available
    Text: SKiiP 592 GH 170 - 2*271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT


    Original     		PDF

    diode b73

    Abstract: No abstract text available
    Text: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM


    Original     		PDF

    semikron skiip 3

    Abstract: semikron skiip 10 diode b73
    Text: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 592 GH 170 - 2*271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET NO. PD-9.802 International S ] Rectifier IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency • Switching-loss rating includes


    OCR Scan     		PDF IRGPC50UD2 Liguna49 00220b3