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    IGBT 500V 5A Search Results

    IGBT 500V 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 500V 5A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PS20351-N

    Abstract: No abstract text available
    Text: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS20351-N PS20351-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS20351-N INTEGRATED POWER FUNCTIONS 500V/3A low-loss 4th generation planar IGBT inverter


    Original     		PS20351-N 00V/3A PS20351-N PDF

    c628 DIODE

    Abstract: IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		IRGB430UD2 O-220AB C-632 c628 DIODE IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode PDF

    C639

    Abstract: transistor C639 transistor C640 c638 transistor c637 transistor transistor C635 transistor C636 c640 transistor transistor C639 w IRGP430UD2
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		IRGP430UD2 O-247AC C-640 C639 transistor C639 transistor C640 c638 transistor c637 transistor transistor C635 transistor C636 c640 transistor transistor C639 w IRGP430UD2 PDF

    transistor C618

    Abstract: c617 transistor transistor C624 C618 transistor c624 DIODE c619 DIODE IRGB420UD2
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		IRGB420UD2 O-220AB C-624 transistor C618 c617 transistor transistor C624 C618 transistor c624 DIODE c619 DIODE IRGB420UD2 PDF

    D-12

    Abstract: IRGB430U
    Text: PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGB430U O-220AB C-586 D-12 IRGB430U PDF

    transistor C632

    Abstract: c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE
    Text: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGB430UD2 O-220AB C-632 transistor C632 c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE PDF

    transistor C639

    Abstract: C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w
    Text: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGP430UD2 O-247AC C-640 transistor C639 C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w PDF

    c638 transistor

    Abstract: C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635
    Text: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGP430UD2 O-247AC C-640 c638 transistor C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635 PDF

    IRGB420U

    Abstract: C-580 D-12 c575 irgb420
    Text: PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGB420U O-220AB C-580 IRGB420U C-580 D-12 c575 irgb420 PDF

    C577

    Abstract: C-580 D-12 IRGB420U
    Text: PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGB420U O-220AB C-580 C577 C-580 D-12 IRGB420U PDF

    IRGB430UD2

    Abstract: diode c631 c627 DIODE c628 DIODE
    Text: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGB430UD2 O-220AB C-632 IRGB430UD2 diode c631 c627 DIODE c628 DIODE PDF

    C583

    Abstract: D-12 IRGB430U C586
    Text: PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGB430U O-220AB C-586 C583 D-12 IRGB430U C586 PDF

    c617 transistor

    Abstract: transistor C618 C618 transistor diode c624 c618 diode IRGB420UD2 c624 DIODE diode C622 transistor C624
    Text: PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating f requency over 5kHz


    Original     		IRGB420UD2 O-220AB C-624 c617 transistor transistor C618 C618 transistor diode c624 c618 diode IRGB420UD2 c624 DIODE diode C622 transistor C624 PDF

    transistor C618

    Abstract: c617 transistor C618 transistor c624 DIODE transistor C624 c623 DIODE diode c624 transistor c620 C620 diode c619 DIODE
    Text: PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating f requency over 5kHz


    Original     		IRGB420UD2 O-220AB C-624 transistor C618 c617 transistor C618 transistor c624 DIODE transistor C624 c623 DIODE diode c624 transistor c620 C620 diode c619 DIODE PDF

    tyco igbt module 25A

    Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
    Text: Power Modules Fast Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power range


    Original     		Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A PDF

    sla6805m

    Abstract: sma6823m washing machine electric circuit siemens bosch sma6822m bosch mp capacitor LG refrigerator whirlpool washing machine circuit lg washing machine control circuit bosch washing machine motor GE Refrigerator Compressor
    Text: Sanken High-Quality, High-Performance Power ICs From Allegro MicroSystems, Inc. Sanken Inverter Power Module Series 2007 September 29, 2007 Introduction of High Voltage IPM for Motor Drive Application ƒ For Small Capacity Use Up to 200W SMA, SLA (“A” and “B” in photo)


    Original     		PDF

    600V igbt dc to dc boost converter

    Abstract: IR mosfets IR power mosfet switching power supply welding rectifier circuit board MOSFET FOR 100khz SWITCHING APPLICATIONS IRFP450 igbts IGBT gate drive for a boost converter 3 watt smps circuit comparison of IGBT and MOSFET
    Text: INTERNATIONAL RECTIFIER CORPORATION 100 North Sepulveda Boulevard, 8th Floor, El Segundo, California 90245 Phone: 310-726-8622 Fax: 310-252-7167 WARP SpeedTM IGBTs - Fast Enough To Replace Power MOSFETs in Switching Power Supplies at over 100 kHz Chris Ambarian - Director of Switch Strategic Marketing Chesley Chao - Strategic Marketing


    Original     		O-220 O-247 IRG4PC30W IRFP450) 600V igbt dc to dc boost converter IR mosfets IR power mosfet switching power supply welding rectifier circuit board MOSFET FOR 100khz SWITCHING APPLICATIONS IRFP450 igbts IGBT gate drive for a boost converter 3 watt smps circuit comparison of IGBT and MOSFET PDF

    stepper motor driver full bridge 6A

    Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
    Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx


    Original     		BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    irf840 pwm ac motor

    Abstract: transistor irf840 frequency range irf840 mosfet TRANSISTOR mosfet IRF840 inverter irf840 pwm for dc to dc chopper using igbt 200v dc motor igbt switched reluctance motor IGBT pwm ac chopper control of single phase induction STGP10N50
    Text: APPLICATION NOTE COMPARISON OF MOSFET AND IGBT TRANSISTORS IN MOTOR DRIVE APPLICATIONS by B. Maurice, G. Izzo, T. Castagnet 1. INTRODUCTION 3.1 Single Transistor Chopper The increase of the switching frequency and the reduction of the power transistors losses are always


    Original     		PDF

    24v 2a smps

    Abstract: smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R
    Text: C O M M U N I C A T I O N S P O W E R Taking Charge Batteries, Chargers and Chemistry Evolution in Communications by Tara Lynn Macdonald W HILE THERE ARE MANY alternative rechargeable systems, lead-acid batteries are still the primary choice. Compared with alternative solutions,


    Original     		95Vac 264Vac 1500-AEQ 144Vdc/10A. 138Vdc 60-cell, 24v 2a smps smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R PDF

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V PDF

    Untitled

    Abstract: No abstract text available
    Text: i l i H a r r is uu semiconductor 2N6975, 2N6976 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs December 1993 Package Features JEDEC T0-204AA BOTTOM VIEW • SA, 400V and 500V • V CE ON 2V • Tp! 1^8, 0.5ns EMITTER • Low On-State Voltage • Fast Switching Speeds


    OCR Scan     		2N6975, 2N6976 2N6977, 2N6978 T0-204AA 2N6976, 2N6977 2N6978 PDF

    10N40F1D

    Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
    Text: HGTP10N40F1D, HGTP10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS


    OCR Scan     		HGTP10N40F1D, HGTP10N50F1D O-220AB HGTP10N50F1D 00A/U9 10N40F1D 10N50F1D GE 639 transistor 10n50 10N50F1 GEP diode RN2512 PDF