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    IGBT 5J301 EQUIVALENT IGBT Search Results

    IGBT 5J301 EQUIVALENT IGBT Result Highlights (5)

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    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 5J301 EQUIVALENT IGBT Datasheets Context Search

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    2-10R1C

    Abstract: 5J301 GT5J301 Toshiba c
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage


    Original     		GT5J301 2-10R1C 5J301 GT5J301 Toshiba c PDF

    2-10R1C

    Abstract: GT5J301 IGBT 5j301 equivalent IGBT
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s Max. (IC = 5A) z Low saturation voltage


    Original     		GT5J301 2-10R1C GT5J301 IGBT 5j301 equivalent IGBT PDF

    5J301

    Abstract: 2-10R1C
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. (IC = 5A) z Low saturation voltage


    Original     		GT5J301 5J301 2-10R1C PDF