Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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bsm 50 gd 120 dlc
Abstract: k 246 transistor Eupec BSM Eupec Power Semiconductors 600v bsm IC-95 BSM 225
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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Eupec BSM
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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Untitled
Abstract: No abstract text available
Text: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X15 F1 NTC Pin arangement see outlines Features Symbol Conditions
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75-12P1
75-12P1
81T120
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Untitled
Abstract: No abstract text available
Text: VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X15 F1 NTC Pin arangement see outlines Features Symbol Conditions
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75-06P1
75-06P1
42T60
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igbt module
Abstract: SII75N06 inverter ls 600
Text: SII75N06 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(75)oC ICRM TC= 75oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter
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SII75N06
150oC
125oC
000A/us
igbt module
SII75N06
inverter ls 600
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PS18
Abstract: SV18
Text: VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IC25 = 92 A = 1200 V VCES VCE sat typ. = 2.7 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 NTC X16 T16 NTC IK10 X16 AC1 F1 Pin arangement see outlines Features
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75-12P1
75-12P1
81T120
PS18
SV18
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7506P
Abstract: PS18 SV18 TF010 diode 407
Text: VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 Pin arangement see outlines Features
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75-06P1
75-06P1
42T60
7506P
PS18
SV18
TF010
diode 407
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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Abstract: No abstract text available
Text: SK 75 GD 066 T power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 2* * *
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VS-GB75DA120UP
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy
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VS-GB90DA120U
VS-GB75DA120UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-GB75DA120UP
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VS-GB75DA120UP
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy
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VS-GB90DA120U
VS-GB75DA120UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-GB75DA120UP
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"IGBT h-bridge"
Abstract: h-bridge ic amp h-bridge gate drive ic QIB0607002 RG83 igbt h bridge application what is fast IGBT transistor 7272 300 amp igbt ups
Text: Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 724 925-7272 QIB0607002 H-BRIDGE 75 Amp/600 Volts Description: Powerex IGBT H-Bridge Module is designed especially for customer applications. Each module consists of four IGBT Transistors in an
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QIB0607002
Amp/600
100ns)
"IGBT h-bridge"
h-bridge ic amp
h-bridge gate drive ic
QIB0607002
RG83
igbt h bridge application
what is fast IGBT transistor
7272
300 amp igbt ups
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A7 DIODE
Abstract: diode a7 75-06A7T
Text: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4
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MWI7506A7
A7 DIODE
diode a7
75-06A7T
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LS183
Abstract: XLS-10 75GB124D
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 100 / 75
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Untitled
Abstract: No abstract text available
Text: FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications
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FGY75N60SMD
O-247D03)
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NTC resistor T5
Abstract: MKI 75-06 A7
Text: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A VCES = 600 V VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T T6 D2 3 11 4 12
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MWI7506A7
NTC resistor T5
MKI 75-06 A7
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VS-GB75SA120UP
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C
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VS-GB90SA120U
VS-GB75SA120UP
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GB75SA120UP
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Untitled
Abstract: No abstract text available
Text: IGBT IGBT + SOFT RECOVERY/ULTRA FAST A.P. RECTIFIER PACKAGE TO-254 TO-258 DEVICE TYPE BVCES VOLTS SNGD20620 600 SNGD20620A tf * l rr * 1 Reverse Diode nsec VCE (sat) VOLTS nsec 20 2.6 570 130 75 600 20 3.1 310 130 75 SNGD20640 600 40 2.0 800 150 125 SNGD20648A
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SNGD20620
SNGD20640
SNGD21034
SNGD20648A
O-258
SNGD20620A
O-254
40A/nsec,
flZS40EE
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Untitled
Abstract: No abstract text available
Text: FU JI 2-Pack IGBT 600 V 75 A 2MBI75N-060 [lILMëüMlE IGBT MODULE N series Outline Drawing • Features • • • • • • Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic M inimized Internal Stray Inductance
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2MBI75N-060
D-60528
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Untitled
Abstract: No abstract text available
Text: Li IXYS Mil 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules lC25 = 90 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t typ. = Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions
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D-68623
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