SCR Inverter
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.
|
Original
|
SPM1003
SCR Inverter
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
|
Original
|
FS200R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
|
Original
|
FS100R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
|
PDF
|
6A243
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS150R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
|
Original
|
FS150R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
6A243
|
PDF
|
IGPT CIRCUIT
Abstract: IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT HCPL-3160
Text: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback
|
Original
|
HCPL-3160
HCPL-3160
SO-16
IGPT CIRCUIT
IGBT Gate Drive Optocoupler
IGBT desaturation
IC 3160
hcpl 3160
power electronic transistor IGPT
|
PDF
|
IGBT Gate Drive Optocoupler
Abstract: IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL-3160 HCPL316
Text: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback
|
Original
|
HCPL-3160
HCPL-3160
SO-16
IGBT Gate Drive Optocoupler
IGPT CIRCUIT
controller for PWM with IGBT
IGBT desaturation
HCPL316
|
PDF
|
M57962AL
Abstract: DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER
Text: QC962 Hybrid Integrated IGBT Driver QC962 is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output with the opto-coupler.
|
Original
|
QC962
QC962
pin13
pin14
3300pF
51MAX
10MAX
M57962AL
DATA SHEET OF IGBT
IGBT control circuit
igbt welding
igbt wiring
Igbt 15kV 600A
M57962
"IGBT Driver"
IGBT with V-I characteristics
OPTO COUPLER
|
PDF
|
sic marking e6
Abstract: sic marking e7
Text: SENSITRON SEMICONDUCTOR SPM1002 Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE FAST SWITCHING 3RD GENERATION IGBT
|
Original
|
SPM1002
-700C
2000C
58iconductor.
sic marking e6
sic marking e7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G180-060D TECHNICAL DATA DATASHEET 4245, REV - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 180 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
|
Original
|
SPM6G180-060D
/-20V
125oC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
|
Original
|
SPM6G060-120D
/-20V
|
PDF
|
IGBT 48V 200A
Abstract: No abstract text available
Text: SPM6G50-60 SENSITRON SEMICONDUCTOR TECHNICAL DATA Custom Power Hybrid Three-Phase IGBT BRIDGE, 600 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage
|
Original
|
SPM6G50-60
/-20V
125oC
IGBT 48V 200A
|
PDF
|
SCR 100A
Abstract: SCR gate Control IC Full-bridge forward inverter scr inverter SCR Gate Drive turn off SCR 600V GE SCR SCR 50A SCR Inverter datasheet GE power SCR datasheet
Text: QIA0620004 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an
|
Original
|
QIA0620004
MIL-PRF-38534
-400A/
SCR 100A
SCR gate Control IC
Full-bridge forward inverter
scr inverter
SCR Gate Drive turn off
SCR 600V
GE SCR
SCR 50A
SCR Inverter datasheet
GE power SCR datasheet
|
PDF
|
Full-bridge inverter
Abstract: SCR gate Control IC scr dc motor forward reverse control SCR 100A
Text: QIA0620004 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an
|
Original
|
QIA0620004
MIL-PRF-38534
-400A/S
Full-bridge inverter
SCR gate Control IC
scr dc motor forward reverse control
SCR 100A
|
PDF
|
LIN opto isolator
Abstract: SPM6G080-060D IC 4098
Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
|
Original
|
SPM6G080-060D
/-20V
LIN opto isolator
SPM6G080-060D
IC 4098
|
PDF
|
|
|
150A SCR
Abstract: Full-bridge inverter QIA0615007 class C inverter SCR 7pack igbt module SCR 50A Full-bridge forward inverter SCR gate Control IC SCR 100A SCR Gate Drive turn off
Text: QIA0615007 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 150 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an
|
Original
|
QIA0615007
MIL-PRF-38534
-300A/S
150A SCR
Full-bridge inverter
QIA0615007
class C inverter SCR
7pack igbt module
SCR 50A
Full-bridge forward inverter
SCR gate Control IC
SCR 100A
SCR Gate Drive turn off
|
PDF
|
IGBT desaturation
Abstract: SPM6G060-120D IGBT 50 amp 1200 volt
Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
|
Original
|
SPM6G060-120D
/-20V
IGBT desaturation
SPM6G060-120D
IGBT 50 amp 1200 volt
|
PDF
|
d2 diode series
Abstract: DIODE D2 diode Vfm igbt module QIQ0660001 diode 600a
Text: QIQ0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 IGBT H-Series Chopper Hermetic Module 600 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors
|
Original
|
QIQ0660001
Amperes/600
d2 diode series
DIODE D2
diode Vfm
igbt module
QIQ0660001
diode 600a
|
PDF
|
IGBT 600a
Abstract: QIS0660001 IC600A igbt 600a output ac
Text: QIS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single IGBT H-Series Hermetic Module 600 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors
|
Original
|
QIS0660001
Amperes/600
2025kHz)
IGBT 600a
QIS0660001
IC600A
igbt 600a output ac
|
PDF
|
igbt control servo motor
Abstract: No abstract text available
Text: QIR0620001 Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 724 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT
|
Original
|
QIR0620001
Amperes/600
2025kHz)
igbt control servo motor
|
PDF
|
IC53A
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
|
Original
|
SPM6G060-120D
IC53A
|
PDF
|
LIN opto isolator
Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
Text: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
|
Original
|
SPM6G080-120D
/-20V
LIN opto isolator
diode piv 800 50A
IGBT desaturation
SPM6G080-120D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
|
OCR Scan
|
MGP20N35CL
-220A
|
PDF
|
GP20N
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)
|
OCR Scan
|
MGP20N40CL
21A-09
O-220AB
GP20N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI HYBRID ICs M57957L HYBRID 1C FOR DRIVING IGBT MODULES Hybrid Integrated Circuit For Driving IGBT Modules Description: M57957L is a hybrid integrated cir cuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates
|
OCR Scan
|
M57957L
M57957L
30kHz,
|
PDF
|
