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    IGBT ELECTROSTATIC HANDLING PRECAUTIONS Search Results

    IGBT ELECTROSTATIC HANDLING PRECAUTIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT ELECTROSTATIC HANDLING PRECAUTIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT Electrostatic Handling Precautions

    Abstract: AN4502 Dynex Semiconductor BSI 208
    Text: AN4502 Application Note AN4502 IGBT Electrostatic Handling Precautions Application Note Replaces September 2000 version, AN4502-3.0 AN4502-3.1 July 2002 The IGBT has been developed to combine the properties of both MOSFET and Bipolar devices. This overcomes some of the


    Original     		PDF AN4502 AN4502 AN4502-3 IGBT Electrostatic Handling Precautions Dynex Semiconductor BSI 208

    igbt v1

    Abstract: No abstract text available
    Text: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Preliminary Information DS5491-1.1 September 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		PDF DIM600DCM17-A000 DS5491-1 DIM600DCM17-A000 igbt v1

    DIODE i2t

    Abstract: DS5490-1 DIM400DCM17-A000 DS5490
    Text: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Replaces September 2001, version DS5490-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5490-2.0 March 2002


    Original     		PDF DIM400DCM17-A000 DS5490-1 DS5490-2 DIM400DCM17-A000 DIODE i2t DS5490

    DIM600DCM17-A000

    Abstract: 256068
    Text: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces September 2001, version DS5491-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5491-2.0 March 2002


    Original     		PDF DIM600DCM17-A000 DS5491-1 DS5491-2 DIM600DCM17-A000 256068

    DIODE i2t

    Abstract: No abstract text available
    Text: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Preliminary Information DS5490-1.1 September 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		PDF DIM400DCM17-A000 DS5490-1 DIM400DCM17-A000 DIODE i2t

    DIODE i2t

    Abstract: DIM400DCM17-A000
    Text: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5490-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5490-3.1 July 2002


    Original     		PDF DIM400DCM17-A000 DS5490-2 DS5490-3 DIM400DCarantee DIODE i2t DIM400DCM17-A000

    DIM400DCM17-A000

    Abstract: No abstract text available
    Text: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5490-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5490-3.1 July 2002


    Original     		PDF DIM400DCM17-A000 DS5490-2 DS5490-3 DIM400DCarantee DIM400DCM17-A000

    DIM400DCM17-A000

    Abstract: DIM400DCS17-A000
    Text: DIM400DCM17-A000 DIM400DCS17-A000 IGBT Chopper Module DS5880-1.0 February 2006 LN24476 FEATURES • 10µs Short Circuit Withstand ■ Lead Free Construction ■ Non Punch Through Silicon ■ Isolated Copper Base KEY PARAMETERS VCES (typ) VCE(sat) * (max)


    Original     		PDF DIM400DCM17-A000 DIM400DCS17-A000 DS5880-1 LN24476) DIM400DCS17-A000 DIM400DCM17-A000

    DIODE i2t

    Abstract: arm ic bi-directional switches IGBT dc to dc chopper using igbt DIM400DCM17-A000
    Text: DIM400DCM17-A000 DIM400DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5490-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5490-3.1 July 2002


    Original     		PDF DIM400DCM17-A000 DS5490-2 DS5490-3 DIM400DCarantee DIODE i2t arm ic bi-directional switches IGBT dc to dc chopper using igbt DIM400DCM17-A000

    DIM600DCM17-A000

    Abstract: lm411
    Text: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5491-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5491-3.1 Octtober 2002


    Original     		PDF DIM600DCM17-A000 DS5491-2 DS5491-3 DIM600DCM17-A00arantee DIM600DCM17-A000 lm411

    Untitled

    Abstract: No abstract text available
    Text: DIM600DCM17-A000 IGBT Chopper Module DS5607- 4.1 March 2007 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AIN substrate High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max)


    Original     		PDF DIM600DCM17-A000 DS5607- LN25194) DIM600DCM17-A000

    DIODE i2t

    Abstract: heat sink design guide, IGBT DIM600DCM17-A000
    Text: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module DS5491-4.0 April 2003 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF DIM600DCM17-A000 DS5491-4 DIM600DCM17-A000 DIODE i2t heat sink design guide, IGBT

    DIM600DCM17-A000

    Abstract: DIM600DCM17
    Text: DIM600DCM17-A000 IGBT Chopper Module DS5491- 4.2 May 2007 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AIN substrate • High Thermal Cycling Capability • Lead Free construction KEY PARAMETERS


    Original     		PDF DIM600DCM17-A000 DS5491- LN25348) DIM600DCM17-A000 170ty DIM600DCM17

    DIM600DCS17-A000

    Abstract: No abstract text available
    Text: DIM600DCS17-A000 IGBT Chopper Module DS5607- 2.1 March 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24484)


    Original     		PDF DIM600DCS17-A000 DS5607- LN24484) DIM600DCS17-A000

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 LN28672 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)


    Original     		PDF DIM1600ECM17-A000 DS6069-1 LN28672) DIM1600ECM17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM800ECM33-F000 IGBT Chopper Module Replaces DS5815-1.2 DS5815-3 September 2012 LN29759 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)


    Original     		PDF DIM800ECM33-F000 DS5815-1 DS5815-3 LN29759) DIM800ECM33-F000

    AN4502

    Abstract: No abstract text available
    Text: TGD-1X AN4502 Electrostatic Handling Precautions Application Note Supersedes July 1996 version, AN4502 - 1.1 AN4502 - 1.2 March 1998 individual should take the precaution of discharging themselves to earth via a high value resistor typically 2 to 4MΩ or preferably be earthed via a wrist strap. The conductive


    Original     		PDF AN4502 AN4502

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM18
    Text: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF GP2400ESM18 DS5406-1 GP2400ESM18 AN4502 AN4503 AN4505 AN4506

    DIM800DCS12-A000

    Abstract: No abstract text available
    Text: DIM800DCS12-A000 IGBT Chopper Module DS5839- 1.1 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24042)


    Original     		PDF DIM800DCS12-A000 DS5839- LN24042) DIM800DCS12-A000

    bi-directional switches IGBT

    Abstract: DIM800DCS17-A000
    Text: DIM800DCS17-A000 IGBT Chopper Module DS5843- 1.1 MAY 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24611)


    Original     		PDF DIM800DCS17-A000 DS5843- LN24611) DIM800DCS17-A000 bi-directional switches IGBT

    DIM800DCM17-A000

    Abstract: No abstract text available
    Text: DIM800DCM17-A000 IGBT Chopper Module DS5444- 4.2 May 2006 LN24610 FEATURES • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Non Punch Through Silicon • Isolated MMC Base with AIN Substrate KEY PARAMETERS VCES VCE (sat)* (typ) IC


    Original     		PDF DIM800DCM17-A000 DS5444- LN24610) DIM800DCM17-A000

    DIM600DDS17-A000

    Abstract: No abstract text available
    Text: DIM600DDS17-A000 Dual Switch IGBT Module DS5842-1.2 MAY 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN24613)


    Original     		PDF DIM600DDS17-A000 DS5842-1 LN24613) DIM600DDS17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM400DCM17-A000 IGBT Chopper Module Replaces DS5490-4 FEATURES • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon  Isolated AlSiC Base with AlN Substrates  Lead Free Construction APPLICATIONS  High Reliability Inverters


    Original     		PDF DIM400DCM17-A000 DS5490-4 DS5490-5 LN28169)

    DIM400DCM17-A000

    Abstract: DIM400DCM17-A
    Text: 16 3 DS5490-5 March 2011 LN28169 14 ±0.2 ±0.2 Replaces DS5490-4 IGBT Chopper Module 11.5 DIM400DCM17-A000 ±0.2 FEATURES • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DS5490-5 LN28169) DS5490-4 DIM400DCM17-A000 DIM400DCM17-A000 DIM400DCM17-A