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    IGBT FAILURE FIT Search Results

    IGBT FAILURE FIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT FAILURE FIT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    OF IGBT

    Abstract: IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 reliability report and tests for failure rate how can test igbt siemens igbt BSM 75 gb 100 Siemens BSM 50 GB 100 DN1
    Text: Status Report for the Improvement Programme for Siemens IGBT Modules Contents: 1. Scope and Reliability requirements 2. Investigations regarding Temperature Cycling and Power Cycling 3. Results of Temperature and Power Cycling tests 4. Figures on Lifetime and Failure Rate


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    t1/10 10sec. OF IGBT IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 reliability report and tests for failure rate how can test igbt siemens igbt BSM 75 gb 100 Siemens BSM 50 GB 100 DN1 PDF

    GT 1081

    Abstract: MAS 10 RCD IGBT GT 1081 igbt 3 KA transistor GT 1081 T1791 rcd 103 35d56 DS30 GS11
    Text: Click on outline no. IGBT and GCT - Freewheeling Diodes Type V DRM V D 1031 SH D 1331 SH D 1641 SX D 1181 SX D 1441 SX D 931 SH D 1131 SH *) 4500 4500 4500 6000 6000 6500 6500 estimate failure rate λ ~ 100 fit V(D)D *) I(FSM) ∫i2dt V(F)/I(FM) kV kA A²s


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    infineon mtbf

    Abstract: MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate
    Text: APPLICATION NOTE Page 1 von 2 Definition of FIT and MTBF A failure rate λ=is defined by the number of failures r during a specific test time t of n components: λ= r n ⋅t The unit for failure rates is 1 fit failures in time = 1*10-9h-1, meaning one failure in 109 operation hours of the device.


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    10-9h-1, 5000h infineon mtbf MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate PDF

    powerful welding inverter

    Abstract: ULTRASONIC MODULE us Econo flexible neon 3 phase IGBT inverter design Ultrasonic welding driver igbt inverter design 300A 1200V IGBT infineon rectifier three phase 100a igbt 1600v 100A
    Text: Product Brief EconoPACK 4 Main Features • The new world standard ■ EconoPACK™ 4 perfectly fits into the well-known Econo range. EconoPACK™ 4 features screw power terminals providing excellent electric connection. DC and AC link are separated and distinguishable at one glance for ease of use.


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    Industrial Drives

    Abstract: V23990-P849-A48-PM P849A
    Text: V23990-P849-*4*-PM datasheet flow PIM 0 3rdgen 1200 V / 8 A flow PIM 0 3rdgen Features ● 2 Clips housing in 12 and 17mm height ● Trench Fieldstop Technology IGBT4 ● Optional w/o BRC Target Applications 12mm Press-fit pins 12mm Solder pins 17mm Press-fit pins


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    V23990-P849- V23990-P849-A48 V23990-P849-A49 V23990-P849-C48 V23990-P849-C49 Industrial Drives V23990-P849-A48-PM P849A PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y target datasheet flowNPC 0 600V/75A & 99mΩ PS* Features flow0 12mm flow0 Press-fit ● PS*: parallel switch for high speed and efficiency ● neutral point clamped inverter ● reactive power and LVRT capability


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    10-FZ06NRA084FP02-P969F68 10-PZ06NRA084FP02-P969F68Y 00V/75A PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NRA069FP02-P967F68 10-PZ06NRA069FP02-P967F68Y target datasheet flowNPC 0 600V/60A & 99mΩ PS* Features flow0 12mm flow0 Press-fit ● PS*: parallel switch for high speed and efficiency ● neutral point clamped inverter ● reactive power and LVRT capability


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    10-FZ06NRA069FP02-P967F68 10-PZ06NRA069FP02-P967F68Y 00V/60A PDF

    T0340VB

    Abstract: d686* transistor transistor c 2060 T0340VB45G 2008AN01 Westcode Semiconductors transistor 2060A D-68623 westcode igbt
    Text: WESTCODE An Date:- 2 Dec, 2010 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T0340VB45G T0340VB45G T0340VB d686* transistor transistor c 2060 2008AN01 Westcode Semiconductors transistor 2060A D-68623 westcode igbt PDF

    T1600GB45G

    Abstract: T1600 IC 7418 datasheet transistor polar D-68623 ixys application note igbt 3 KA transistor 1GE
    Text: WESTCODE An Date:- 3 Dec, 2010 Data Sheet Issue:- 1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T1600GB45G T1600GB45G T1600 IC 7418 datasheet transistor polar D-68623 ixys application note igbt 3 KA transistor 1GE PDF

    T0800EB

    Abstract: 2008AN01 T0800 transistor P1 P 12 T0800EB45G MAR 208 transistor
    Text: WESTCODE An Date:- 23 Dec, 2010 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T0800EB45G T0800EB45G T0800EB 2008AN01 T0800 transistor P1 P 12 MAR 208 transistor PDF

    T0850VB

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T0850VB25E T0850VB25E T0850VB PDF

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T0850VB25E T0850VB25E PDF

    T1200EA45E

    Abstract: transistor polar D-68623 T1200
    Text: Date:- 21 Nov, 2005 Provisional Data  Data Sheet Issue:- 3 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T1200EA45E MAXIMUM LIMITS UNITS Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


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    T1200EA45E T1200EA45E transistor polar D-68623 T1200 PDF

    T2400GA45E

    Abstract: MJ6000 T2400
    Text: Date:- 22 Nov, 2005 Data Sheet Issue:- 1 Prospective Data    Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


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    T2400GA45E VCES/100 T2400GA45E MJ6000 T2400 PDF

    T0500NB25E

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 5 Sep, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0500NB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T0500NB25E rang562) T0500NB25E PDF

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 25 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T2250AB25E T2250AB25E PDF

    T2250AB

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 25 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T2250AB25E T2250AB25E T2250AB PDF

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT PDF

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U PDF

    MJ 5030

    Abstract: T0900TA52E
    Text: Date:- 17 Jun, 2003 Provisional Data  Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0900TA52E MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T0900TA52E T0900TA52E MJ 5030 PDF

    T2400GA45E

    Abstract: T2400 D-68623
    Text: Date:- 5 March, 2007 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


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    T2400GA45E T2400GA45E T2400 D-68623 PDF

    T0800TB45E

    Abstract: T0800 D-68623 S200N d686 IGBT 800 cr 406 transistor E0900NC45C
    Text: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    T0800TB45E T0800TB45E T0800 D-68623 S200N d686 IGBT 800 cr 406 transistor E0900NC45C PDF

    Untitled

    Abstract: No abstract text available
    Text: Date:- 1 April, 2011 Data Sheet Issue:- A2 Advance Data Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


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    T2400GB45E T2400GB45E PDF

    Mitsubishi Electric IGBT MODULES

    Abstract: transistor free CM600DY-24NF mitsubishi j 170 a ignition module igbt welding machine scheme 37Kw motor CM600DU-12F CM600DY-24A calculation of IGBT snubber CM300DY-24NF
    Text: IGBT Modules Application Note The 5 t h Generation [ CSTBT TM ] IGBT C hip use 12NF/24NF/24A series  Dec. 2007  Notice for Safe Designs •Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is


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    12NF/24NF/24A 10kHz. Mitsubishi Electric IGBT MODULES transistor free CM600DY-24NF mitsubishi j 170 a ignition module igbt welding machine scheme 37Kw motor CM600DU-12F CM600DY-24A calculation of IGBT snubber CM300DY-24NF PDF