Untitled
Abstract: No abstract text available
Text: 6MBP75RA120 1200V / 75A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection
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6MBP75RA120
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7MBP75TEA
Abstract: No abstract text available
Text: 7MBP75TEA060 600V / 75A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP75TEA060
7MBP75TEA
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FF400R17KF6CB2
Abstract: IGBT FF 300 igbt ff 75 r
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
FF400R17KF6CB2
IGBT FF 300
igbt ff 75 r
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IGBT FF 300
Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: SK 75 GARL 065 E Absolute Maximum Ratings Symbol Conditions IGBT 01 0%1( $ $; # + ,- ./ # + ,- 63 .7 < = 7 # + ,- 63 .7 #> Values Units 233 4 ,3 89 - =-6 =3 : : ! ?3 @@@ A =-3 . =3C 29 ,32 =C6 : : ! ?3 @@@ A =-3
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Untitled
Abstract: No abstract text available
Text: 7MBP50TEA060 600V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP50TEA060
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Untitled
Abstract: No abstract text available
Text: 7MBP150TEA060 600V / 150A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP150TEA060
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7MBP50TEA060
Abstract: AC200V AC2500 high voltage diode 100 kv TRANSISTOR 15kHZ 30A 300V
Text: 7MBP50TEA060 600V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP50TEA060
7MBP50TEA060
AC200V
AC2500
high voltage diode 100 kv
TRANSISTOR 15kHZ 30A 300V
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Untitled
Abstract: No abstract text available
Text: 7MBP50TEA060 600V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP50TEA060
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Untitled
Abstract: No abstract text available
Text: 7MBP150TEA060 600V / 150A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP150TEA060
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Untitled
Abstract: No abstract text available
Text: 6MBP50TEA060 600V / 50A 6 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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6MBP50TEA060
trr125
Irr12
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FZ 77 1000
Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Text: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5
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24v 125A IGBT
Abstract: No abstract text available
Text: s e M IK R O n AC, 1min Operating / stor. tem perature c/ —I vV jso l 4) S’ Conditions1’ o Symbol o— I SKiiP 3-phase bridge Absolute Maximum Ratings Values Units 3000 V -25.+85 °c 1200 V V A IGBT and Inverse Diode VcES Operating DC link voltage
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14N60E
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged
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14N60ED/D
14N60E
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PM75RHA060
Abstract: 2 anode igbt inverter circuit diagram 24 volt dc to 230 volt ac inverter 72T4 BP107 220 Volt dc to ac ups circuit diagram
Text: PO 111ER EX INC _ SIE D • 7 2 R 4 b2 1 O O O S b ^ b T7M H P R X PM 75RHA060 T * 5 7 -2 J Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln tB llim O C f^ ^ -3 M o d u l u s Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e phase + Brake
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72R4b21
PM75RHA060
BP107,
Amperes/110-230
PM75RHA060
2 anode igbt inverter circuit diagram
24 volt dc to 230 volt ac inverter
72T4
BP107
220 Volt dc to ac ups circuit diagram
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IRGKI120F06
Abstract: No abstract text available
Text: International I ®]Rectifier PD-9.966C IRGKI120F06 "CHOPPER" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all "tail” losses
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10KHz
50KHz
IRGKI120F06
C-175
554S2
C-176
IRGKI120F06
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Untitled
Abstract: No abstract text available
Text: International ìor!Rectifier PD - 5.031 CPV362MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features • Short Circuit Rated - 1 0^is @ 125°C, V ge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV362MM
10kHz)
360Vdc
C-416
4A55452
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Untitled
Abstract: No abstract text available
Text: PD - 9.1117 International ¿ r Rectifier IRGPH40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features Fast CoPack IGBT V CES = 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGPH40FD2
10kHz)
O-247AC
C-232
55M52
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP7N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP7N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP7N60E/D
MGP7N60E
21A-09
O-220AB
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n SKiiP 1262 GB 060 - 451 WT/FT Absolute Maximum Ratings Symbol |Conditions 1 V a lu es Units 600 400 1200 2400 40 . + 150 2500 1200 2400 8600 374 V V A A °C V A A A kA2s IGBT & Inverse Diode V ces V c c 10) lc ICM Tj 3) V is o l If Ifm If s m
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000b247
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Untitled
Abstract: No abstract text available
Text: International í«? Rectifier PD-9.967C IRGKI165F06 “CHOPPER" IGBTINT-A-PAK Fast Speed IGBT Vce=600V • Rugged Design • Simple gate-drive • Fast operation up to 10K H z hard switching, or 50 K H z resonant • Switching-Loss Rating includes all "tail"
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IRGKI165F06
C-181
4A554S5
C-182
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imbi300
Abstract: No abstract text available
Text: [ÜT| IGBT mold types • • • • High speed sw itch in g • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w e r drive Su ited fo r high fre q u en cy p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.
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1MBH60-090
1MBH60-10Q
T03PL
1MBH65-090
1MBH65
1MBI600LP-060
1MBI600LN-060
imbi300
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Untitled
Abstract: No abstract text available
Text: PD - 91682 International IQ R Rectifier IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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IRG4PSC71UD
Super-247
O-247
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