7MBP25TEA120
Abstract: AC200V AC2500
Text: 7MBP25TEA120 1200V / 25A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
|
Original
|
7MBP25TEA120
7MBP25TEA120
AC200V
AC2500
|
PDF
|
7MBP50TEA120
Abstract: AC200V AC2500 zener diode 5v with reverse recovery time 1us
Text: 7MBP50TEA120 1200V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
|
Original
|
7MBP50TEA120
7MBP50TEA120
AC200V
AC2500
zener diode 5v with reverse recovery time 1us
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di
|
OCR Scan
|
CM100E3U-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di
|
OCR Scan
|
CM50E3U-24H
|
PDF
|
CM75E3U-24H
Abstract: Mitsubishi Electric IGBT MODULES IGBT die mitsubishi MITSUBISHI IGBT VQE21 mitsubishi electric igbt module
Text: MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di
|
OCR Scan
|
CM75E3U-24H
-150A/
Mitsubishi Electric IGBT MODULES
IGBT die mitsubishi
MITSUBISHI IGBT
VQE21
mitsubishi electric igbt module
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: M itsubishi IGBT M odules are de signed fo r use in switching applica tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di
|
OCR Scan
|
CM50E3U-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
|
OCR Scan
|
CM100DU-24H
-200A/
|
PDF
|
100E3U-24H
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e signed fo r use in switching applica tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di
|
OCR Scan
|
CM100E3U-24H
-200A/
100E3U-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
|
OCR Scan
|
CM50DU-24H
|
PDF
|
FW 3.7
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e signed fo r use in switching applica tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di
|
OCR Scan
|
CM75E3U-24H
FW 3.7
|
PDF
|
IRGRDN400M12
Abstract: LF400A
Text: Provisional Data Sheet PD-9.1204 IRGDDN400M12 ir g r d n 4Q0M12 goRjHecnner "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 400A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated
|
OCR Scan
|
IRGDDN400M12
4Q0M12
C-562
IRGRDN400M12
LF400A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE . . Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of one IGBT in a single configuration with a reverse-connected super
|
OCR Scan
|
CM1000HA-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of one IGBT in a single configuration w ith a reverse-connected s u pe r
|
OCR Scan
|
CM1000HA-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura tion with a reverse-connected su per-fast recovery free-wheel diode.
|
OCR Scan
|
CM300HA-24H
|
PDF
|
|
|
CRD Diode B
Abstract: No abstract text available
Text: International ^Rectifier PM1161 IRGKIN075M12 "CHOPPER LOW SIDE SWITCH" IGBTINT-A-PAK Low conduction loss IGBT Low Side Switch V CE= 1200V lc = 7 5 A • Rugged Design •Simple gate-drive •Switching-Loss Rating Includes all "tail" losses •Short circuit rated
|
OCR Scan
|
IRGKIN075M12
C-506
CRD Diode B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura tion with a reverse-connected su per-fast recovery free-wheel diode.
|
OCR Scan
|
CM600HA-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module con sists of one IGBT in a single con figuration with a reverseconnected super-fast recovery
|
OCR Scan
|
CM200HA-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
|
OCR Scan
|
CM150DY-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of two IGBTs in a half bridge configu ration with each transistor having
|
OCR Scan
|
CM75DY-24H
|
PDF
|
diod m4
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching a pplications. Each m odule consists of one IGBT in a single co nfig ura tion w ith a reverse-connected super-fast recovery free-w heel diode.
|
OCR Scan
|
CM300HA-24H
diod m4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor
|
OCR Scan
|
CM100TF-24H
|
PDF
|
diode bridge LT 402
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor
|
OCR Scan
|
CM100TF-24H
diode bridge LT 402
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge con figuration, with each transistor hav
|
OCR Scan
|
CM75TF-24H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co n fig u ra tion w ith a reverse-connected super-fast recovery free-w heel diode.
|
OCR Scan
|
CM600HA-24H
|
PDF
|
