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    IGBT HITACHI Search Results

    IGBT HITACHI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT HITACHI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igbt inverter welder schematic

    Abstract: inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure
    Text: Ref.No. IGBT-01 Rev.2 Hitachi, Ltd. Power & Industrial Systems Power Semiconductor Dept. Power & Industrial Systems Div. Hitachi IGBT Module Application Manual 1 Introduction to Hitachi IGBT Modules This application manual references specifications of the GS Series AW Version of Hitachi Insulated


    Original     		PDF IGBT-01 UL94VO, igbt inverter welder schematic inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure

    MBM300GR12

    Abstract: IGBT-SP-99025 PC171
    Text: Spec. No. IGBT-SP-99025 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12 [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.


    Original     		PDF IGBT-SP-99025 MBM300GR12 00A/1200V, MBM300GR12 PC171

    mbm150gr12

    Abstract: No abstract text available
    Text: Spec. No. IGBT-SP-99023 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12 [Rated 150A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.


    Original     		PDF IGBT-SP-99023 MBM150GR12 50A/1200V, mbm150gr12

    IGBT-SP-99026

    Abstract: 99026 ETON MBN400GR12
    Text: Spec. No. IGBT-SP-99026 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12 [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.


    Original     		PDF IGBT-SP-99026 MBN400GR12 00A/1200V, 99026 ETON MBN400GR12

    MBM200GR12

    Abstract: IGBT-SP-99024 Hitachi DSA00110
    Text: Spec. No. IGBT-SP-99024 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12 [Rated 200A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.


    Original     		PDF IGBT-SP-99024 MBM200GR12 00A/1200V, MBM200GR12 Hitachi DSA00110

    Untitled

    Abstract: No abstract text available
    Text: Spec. No. IGBT-SP-99022 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12 [Rated 100A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.


    Original     		PDF IGBT-SP-99022 MBM100GR12 00A/1200V,

    MBM400GR6

    Abstract: PDE-M400GR6-0 Hitachi DSA0047 99016
    Text: Spec. No. IGBT-SP-99016 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM400GR6 [Rated 400A/600V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.


    Original     		PDF IGBT-SP-99016 MBM400GR6 00A/600V, MBM400GR6 PDE-M400GR6-0 Hitachi DSA0047 99016

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.


    Original     		PDF IGBT-SP-13012 P1/10 MBN800E33D-AX 000cycles)

    MBN600GR12

    Abstract: IGBT-SP-99034 IGBT 600V 600A
    Text: Spec. No. IGBT-SP-99034 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12 [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING Unit in mm 110 93 4-φ6.5 2-M8 E C E 80 62 40 • Low saturation voltage and high speed. · Low turn-OFF switching loss.


    Original     		PDF IGBT-SP-99034 MBN600GR12 00A/1200V, 36max MBN600GR12 IGBT 600V 600A

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12026 R1 MBN1200F33F Target Specification Silicon N-channel IGBT 3300V F version FEATURES  Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Fine Trench High conductivity IGBT.


    Original     		PDF IGBT-SP-12026 MBN1200F33F 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12026 R4 P1 MBN1200F33F Preliminary Specification Silicon N-channel IGBT 3300V F version FEATURES ∗ Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT.


    Original     		PDF IGBT-SP-12026 MBN1200F33F 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-13008 R2 P1 MBN1800F33F Target Specification Silicon N-channel IGBT 3300V F version FEATURES  Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT.


    Original     		PDF IGBT-SP-13008 MBN1800F33F 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF MBN1200H45E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-10006-R4 MBM600F17D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-05004 MBN1200E33E 000cycles)

    MBN1500E33E2

    Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2 ls290 MBN1500E33E nff 16-102 IC1500 GC 72

    shin-etsu g747

    Abstract: silicon thermal grease g747
    Text: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08038 MBL800E33E 000cycles) shin-etsu g747 silicon thermal grease g747

    Hitachi DSA00281

    Abstract: 330nf 250 v
    Text: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-10002 MBN1500E33E3 000cycles) Hitachi DSA00281 330nf 250 v

    corrosion inhibitor

    Abstract: Hitachi DSA00281
    Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-10006-R2 MBM600F17D 000cycles) 50Hwhole corrosion inhibitor Hitachi DSA00281

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08006 R3 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08006 MBN1000E33E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10002 R5 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-10002 MBN1500E33E3 000cycles)

    silicon thermal grease g747

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08038 MBL800E33E 000cycles) silicon thermal grease g747

    Untitled

    Abstract: No abstract text available
    Text: Power Type Hitachi presents a new IGBT module, 1,700V/2,000V/2,500V/3,300V up to 1,800A. The new IGBT module makes possible higher efficiency and quieter operation of inverters. Features • • • • High thermal fatigue durability High speed and low loss IGBT module


    OCR Scan     		PDF 00V/2 00V/3

    Microwave Oven Inverter Control IC

    Abstract: igbt inverter schematics inverter circuit schematics ON607 UPS schematics igbt drive schematics GN12030E IGBT Hitachi 6015-a GN5020C
    Text: 21 2.4 IGBT Circuit Schematics To meet a wide range of user needs, Hitachi has devices with the following schematics. IGBT Circuit Schematics MODULES DISCRETE Single-arm Single-phase dual pack Three-phase (six pack) C1 h ,~ J à C G1 E1/C2 G2 I E E2 2.5 IGBT Discrete Range


    OCR Scan     		PDF N4S30C GN601QA O-220AB GN5020C GN6050E ON6075E GN120I5C GN12030E GN1205OB Microwave Oven Inverter Control IC igbt inverter schematics inverter circuit schematics ON607 UPS schematics igbt drive schematics IGBT Hitachi 6015-a