ixgq90n27
Abstract: IXGQ90N27PB IXgq90n TO-3P package
Text: Preliminary Technical Information PolarTM VCES = = ICP VCE sat ≤ IXGQ90N27PB IGBT for PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM TO-3P 270 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICPEAK I C(RMS) TJ ≤ 150°C, tp ≤ 1 s, D ≤ 1%
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IXGQ90N27PB
ixgq90n27
IXGQ90N27PB
IXgq90n
TO-3P package
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mosfet 1200V 40A
Abstract: smps 45 watts
Text: STTA9012T V 1/2 TURBOS WITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012T(V)1 STTA9012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE
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STTA9012T
mosfet 1200V 40A
smps 45 watts
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STTA9012TV1
Abstract: STTA9012TV2
Text: STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA9012TV1/2
STTA9012TV1
STTA9012TV2
2500VRMS
STTA9012TV1
STTA9012TV2
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STTA9012TV1
Abstract: STTA9012TV2 fr diode 205
Text: STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA9012TV1/2
STTA9012TV1
STTA9012TV2
2500VRMS
STTA9012TV1
STTA9012TV2
fr diode 205
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STTA9012TV1
Abstract: STTA9012TV2
Text: STTA9012TV1/2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012TV1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE
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STTA9012TV1/2
STTA9012TV1
STTA9012TV2
STTA9012TV1
STTA9012TV2
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stta9012tv2
Abstract: STTA9012TV1
Text: STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA9012TV1/2
STTA9012TV1
STTA9012TV2
2500VRMS
stta9012tv2
STTA9012TV1
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Untitled
Abstract: No abstract text available
Text: APT45GR65B2DU30 APT45GR65B2DU30 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between
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APT45GR65B2DU30
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TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
Abstract: STTA9012TV1 STTA9012TV2 TRANSISTOR mosfet k2
Text: STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA9012TV1/2
STTA9012TV1
STTA9012TV2
2500VRMS
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
STTA9012TV1
STTA9012TV2
TRANSISTOR mosfet k2
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Untitled
Abstract: No abstract text available
Text: APT45GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT45GP120JDQ2
E145592
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data sheet IC 7447
Abstract: ic 7447 IC 7447 data sheet IC 7447 A 7447 ic datasheet 7447 IC 7447 DATASHEET IC 7447 specification IC 7447 data sheet free DATA SHEET 7447
Text: APT11GP60BDQB APT11GP60BDQB TYPICAL PERFORMANCE CURVES 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT11GP60BDQB
O-247
data sheet IC 7447
ic 7447
IC 7447 data sheet
IC 7447 A
7447
ic datasheet 7447
IC 7447 DATASHEET
IC 7447 specification
IC 7447 data sheet free
DATA SHEET 7447
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ic 7445
Abstract: APT45GP120JDQ2 IC 7445 datasheet APT10035LLL max3995
Text: APT45GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT45GP120JDQ2
E145592
ic 7445
APT45GP120JDQ2
IC 7445 datasheet
APT10035LLL
max3995
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UJ 45A diode
Abstract: No abstract text available
Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120JDF2
APT45
UJ 45A diode
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APT45GP120B2DF2
Abstract: APT30DF120
Text: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120B2DF2
APT45GP120B2DF2
APT30DF120
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Untitled
Abstract: No abstract text available
Text: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120B2DF2
APT45GP120B2DF2age
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Untitled
Abstract: No abstract text available
Text: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120B2DF2
APT45GP120B2DF2age
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IC 7432
Abstract: Datasheet of IC 7432 data sheet IC 7432 IC 7432 DATASHEET 7432 7432 ic 78 MOS 7432 or gate ic IC 7432 DATASHEETS or ic 7432
Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120JDF2
IC 7432
Datasheet of IC 7432
data sheet IC 7432
IC 7432 DATASHEET
7432
7432 ic
78 MOS
7432 or gate ic
IC 7432 DATASHEETS
or ic 7432
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES 1200VAPT15GT120B_SRDQ1 G APT15GT120BRDQ1 APT15GT120SRDQ1 APT15GT120BRDQ1G* APT15GT120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT (B) TO The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
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APT15GT120BRDQ1
APT15GT120SRDQ1
APT15GT120BRDQ1G*
APT15GT120SRDQ1G*
50KHz
Collector543)
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES 1200VAPT15GT120B_SRDQ1 G APT15GT120BRDQ1 APT15GT120SRDQ1 APT15GT120BRDQ1G* APT15GT120SRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT (B) TO The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
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APT15GT120BRDQ1
APT15GT120SRDQ1
APT15GT120BRDQ1G*
APT15GT120SRDQ1G*
50KHz
APT151
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3000 0442
Abstract: 7433 APT10035LLL APT45GP120B2DQ2 APT45GP120B2DQ2G
Text: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT45GP120B2DQ2
APT45GP120B2DQ2
APT45GP120B2DQ2G*
3000 0442
7433
APT10035LLL
APT45GP120B2DQ2G
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APT15GT120BRDQ1G
Abstract: APT10078BLL APT15GT120BRDQ1
Text: APT15GT120BRDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT15GT120BRDQ1 APT15GT120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
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APT15GT120BRDQ1
APT15GT120BRDQ1
APT15GT120BRDQ1G*
50KHz
APT15GT120BRDQ1G
APT10078BLL
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APT15GT60BRDQ1
Abstract: APT15GT60BRDQ1G APT6017LLL
Text: TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1 G 600V APT15GT60BRDQ1 APT15GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT15GT60BRDQ1
APT15GT60BRDQ1
APT15GT60BRDQ1G*
150KHz
APT15GT60BRDQ1G
APT6017LLL
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Untitled
Abstract: No abstract text available
Text: r z 7 s g s -th o m s o n “ 7# l * ^ m [ E O T Q * S S T T A 9 0 1 2 T ( V ) 1 /2 TURBOSW ITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av ) 45A V rrm 1200V trr (typ) 65ns V f (max) 1.85V STTA9012T(V)1 STTA9012T(V)2
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STTA9012T
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Untitled
Abstract: No abstract text available
Text: £ ÿ j SGS-THOMSON n o œ ilL IO rae Q ïlB C i S T T A 9 0 1 2 T V 1/2 TURBOSW ITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av ) 45A V rrm 1200V PRELIMINARY DATA K2 O if K1 trr (typ) 65ns V f (max) 1.85V K1 A2 TÜ ZJA1
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STTA9012T
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mosfet 600V 50A
Abstract: No abstract text available
Text: rz7 SGS-THOMSON Ä 7# M ûœ ËŒ O T «® S T T A 9 0 1 2 T V 1 /2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 45A I f (a v ) V (typ) 65ns Vf (max) 1.85V K2 A2 K1 A1 A2 Kl IE O 1200V rrm trr PRELIM IN ARY DATA
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STTA9012T
mosfet 600V 50A
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