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    IGBT K15N60 Search Results

    IGBT K15N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT K15N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k15n60 ic equivalent

    Abstract: No abstract text available
    Text: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    SKB15N60 SKB15N60 k15n60 ic equivalent PDF

    SKP15N60

    Abstract: SKP15N60 or equivalent
    Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for:


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    SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKP15N60 SKP15N60 or equivalent PDF

    K15N60

    Abstract: No abstract text available
    Text: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKB15N60 SKB15N60 K15N60 PDF

    K15N60

    Abstract: k15n60 ic equivalent 80w 120v 8a 120v 8a 80w
    Text: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    SKB15N60 SKB15N60 K15N60 k15n60 ic equivalent 80w 120v 8a 120v 8a 80w PDF

    K15N60

    Abstract: k15n60 equivalent k15n60 ic equivalent SKW15N60
    Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKW15N60 K15N60 k15n60 equivalent k15n60 ic equivalent PDF

    K15N60

    Abstract: SKB15N60HS PG-TO263-3-2 T150H
    Text: SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


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    SKB15N60HS PG-TO263-3-2 K15N60HS K15N60 SKB15N60HS PG-TO263-3-2 T150H PDF

    K15N60

    Abstract: SKP15N60 K15N60
    Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKW15N60 K15N60 SKP15N60 K15N60 PDF

    K15N60

    Abstract: K15N60HS
    Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


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    SKB15N60HS K15N60HS P-TO-220-3-45 SKB15N60HS K15N60 PDF

    k15N60

    Abstract: k15n60 ic equivalent SKP15N60 SKP15N60 or equivalent K15N PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKW15N60 SKW15N60 K15N60
    Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3 k15N60 k15n60 ic equivalent SKP15N60 SKP15N60 or equivalent K15N PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKW15N60 SKW15N60 K15N60 PDF

    K15N60

    Abstract: k15n60 ic equivalent k15n60 equivalent SKW15N60 K15N60 SKP15N60 K15N60
    Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKW15N60 K15N60 k15n60 ic equivalent k15n60 equivalent SKW15N60 K15N60 SKP15N60 K15N60 PDF

    K15N60

    Abstract: K15N60HS
    Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


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    SKB15N60HS K15N60HS P-TO-220-3-45 SKB15N60HS K15N60 PDF

    K15N60

    Abstract: k15n60 equivalent k15n60 ic equivalent Q67040-S4251 K15N60 600v 15a igbt k15n60
    Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original
    SKP15N60 SKW15N60 PG-TO-220-3-1 O-220AB) SKW15N60 K15N60 k15n60 equivalent k15n60 ic equivalent Q67040-S4251 K15N60 600v 15a igbt k15n60 PDF

    K15N60

    Abstract: No abstract text available
    Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SKB15N60HS K15N60HS P-TO-263-3-2 Q67040S4543 P-TO-263-3-2 O-263AB) SKB15N60HS K15N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,


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    SKB15N60 PDF