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    IGBT PRESSPACK Search Results

    IGBT PRESSPACK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT PRESSPACK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DIODE 33 25

    Abstract: MOSFET Modules Bridges Thyristors 3 phase Rectifier Phase Control IC thyristors Phase Control IC DIODE 19 9 IGBT PROTECTION DIODE
    Text: Contents Page General Alphanumerical Index 4 Symbols and Terms 6 IG B T IGBT 8 , 10 IGBT with Diode 8,11 IGBT Modules 9 ISOSMART IGBT Modules 9 Pow er M O SFET Standard MOSFET 12 MOSFET Modules 13 HiPerFET™ 14 Diodes Superfast Diodes 17 Superfast Diode Modules


    OCR Scan     		PDF

    IGBT presspack

    Abstract: IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E
    Text: High Voltage IGBT Gate Driver – C0030BG400 Westcode Semiconductors Limited introduce a high voltage IGBT gate drive unit GDU designed to complement our range of high voltage Press-Pack IGBTs and standard IGBT modules. The device, known as C0030BG400, is a single


    Original     		C0030BG400 C0030BG400, 100kV/ IGBT presspack IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E PDF

    EUPEC DD 105 N 16 L

    Abstract: all type of thyristor EUPEC tt 162 n 16 EUPEC Thyristor thyristor tt 162 n EUPEC Thyristor TT thyristor tt 162 n 12 tt 162 n 16 module bsm 25 gp 120 Eupec bsm 25 gb 120
    Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 thyristor diode asymmetric thyristor average on state current A standard ceramic disc high power ceramic disc


    Original     		PDF

    thyristor tt 162 n 12

    Abstract: thyristor tt 162 n thyristor TT 46 N thyristor TT 162 asymmetric thyristor thyristor tt 25 thyristor TD 25 N dd 55 n 14 powerblock powerblock tt 162 thyristor tt 105 n 16
    Text: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr IGBT Seite 128 Presspacks Stacks Outlines Accessories Explanations 128 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 average on state current A standard ceramic disc high power ceramic disc


    Original     		kuka-2006-de-inhalt thyristor tt 162 n 12 thyristor tt 162 n thyristor TT 46 N thyristor TT 162 asymmetric thyristor thyristor tt 25 thyristor TD 25 N dd 55 n 14 powerblock powerblock tt 162 thyristor tt 105 n 16 PDF

    kuka

    Abstract: ECONOPACK
    Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:33 Uhr Seite 6 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 6 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 17 1200 V 1600 V 1700 V IHM P. 15 600 V 62 mm 1200 V 1700 V P. 10 600 V 1200 V 1700 V


    Original     		kuka-2003-inhalt kuka ECONOPACK PDF

    Econo PIM

    Abstract: a1020 Econo SCR 600 911 DIODE Igbt 1200 1200
    Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 4 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 7-8 1200 V 1600 V 1700 V IHM P. 5-6 600 V 62 mm 1200 V 1700 V P. 9-11 600 V 1200 V 1700 V 34 mm P. 9-11 1200 V 1700 V Econo PACK+


    Original     		PDF

    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating
    Text: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK


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    abb traction motor

    Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
    Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the


    Original     		CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12 PDF

    D1031SH45

    Abstract: thyristor 1100A D1031SH gct thyristor
    Text: New Fast Diodes With Pressure Contact For GCT / IGBT Converters R. Barthelmeß, M. Beuermann, N. Winter eupec, D-91362 Pretzfeld, Germany Abstract New power semiconductor switches, like IGBT and GCT gate commutated thyristor , offer excellent switching performance and make snubberless converter design possible. New FWD (free-wheeling


    Original     		D-91362 4500V1030A 100mm 1000h D1031SH D1031SH45 thyristor 1100A gct thyristor PDF

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original     		12N4501 CH-5600 abb press-pack igbt PDF

    abb press-pack igbt

    Abstract: 12L2516
    Text: VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2516 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1317-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		12L2516 CH-5600 abb press-pack igbt 12L2516 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-00 Jan 08 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Poymide


    Original     		12N4500 CH-5600 PDF

    full bridge igbt induction heating generator

    Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
    Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 56 25 25 9,8 KW 50 9,8 KW 60 66 ø11,5 ø11,5 95 80 2 1 36 50 48 3 60 IGBT 112 124 92


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    T120

    Abstract: T150
    Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 96 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Standard Gate Leads for Disc Type Devices Leads and gate leads must be ordered separately Disc outline/page Material T41.14/75


    Original     		kuka-2003-inhalt 26K/76 35K/76 26K/77 26K/79 T120 T150 PDF

    T1081N

    Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
    Text: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N


    Original     		kuka-2003-inhalt T1901N T1503N T201N T1081N T1201N T501N T551N T553N T739N T1081N T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N PDF

    diode 1600 rectifier

    Abstract: 3 phase bridge rectifier TT 45 N 1200 3 phase bridge fully controlled rectifier B6HK B6U 205 B6U 125 TT 80 N 1200 scr for chopper B6U 550
    Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 16 IsoPACK Bridge Rectifier Type VDRM, VRRM V VDSM = VDRM VRSM = VRRM+ 100V IFRMSM ITRMSM A 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1) DD B6U 145 N 1) DD B6U 205 N 1)


    Original     		EC2/69 EC4/69 EC3/69 EC1/69 diode 1600 rectifier 3 phase bridge rectifier TT 45 N 1200 3 phase bridge fully controlled rectifier B6HK B6U 205 B6U 125 TT 80 N 1200 scr for chopper B6U 550 PDF

    stakpak

    Abstract: 130025H0003 ABB K series V2250 IGBT abb stakpak abb stakpak
    Text: VCE IC = = ABB StakPakTM H Series 2500 V 1300 A Presspack IGBT 5SNR 13H2500 Doc. No. 5SYA1517-01 April.03 • Rugged SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


    Original     		13H2500 5SYA1517-01 CH-5600 stakpak 130025H0003 ABB K series V2250 IGBT abb stakpak abb stakpak PDF

    stakpak

    Abstract: IGBT abb abb press-pack igbt 130025H0003 press-pack igbt 5SNR 10H2500 EN-50124 EN50124-1 IC 9102 EN50124
    Text: VCE IC = = ABB StakPakTM H Series 2500 V 1000 A Presspack IGBT 5SNR 10H2500 Preliminary Doc. No. 5SYA1580-01 May 03 • Rugged SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


    Original     		10H2500 5SYA1580-01 CH-5600 stakpak IGBT abb abb press-pack igbt 130025H0003 press-pack igbt 5SNR 10H2500 EN-50124 EN50124-1 IC 9102 EN50124 PDF

    stakpak

    Abstract: abb press-pack igbt 20H2500 5SNR 20H2500 IGBT 1500 press-pack igbt abb stakpak EN-50124 130025H0003 IGBT abb
    Text: VCE IC = = ABB StakPakTM H Series 2500 V 2000 A Presspack IGBT 5SNR 20H2500 Preliminary Doc. No. 5SYA1582-01 May 03 • Rugged SOA • Fails into stable shorted state • High tolerance to uneven mounting pressure • Designed for series connection • Explosion resistant package


    Original     		20H2500 5SYA1582-01 CH-5600 stakpak abb press-pack igbt 20H2500 5SNR 20H2500 IGBT 1500 press-pack igbt abb stakpak EN-50124 130025H0003 IGBT abb PDF

    IP173

    Abstract: kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08
    Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 20 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 20 IsoPACK Bridge Rectifier Type 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1 DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2)


    Original     		kuka-2003-inhalt IP173 kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 56 25 25 9,8 KW 50 9,8 KW 60 66 ø11,5 ø11,5 95 80 2 1 36 50 48 3 60 IGBT 112 124 92 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced


    Original     		PDF

    GEZ DIODE

    Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
    Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)


    Original     		-KD20 4-KD20 2-KD20 62-KD20 42-KD20 GEZ DIODE GEZ 26 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd PDF

    kuka

    Abstract: Thyristor Modules LZ 02 thyristor k2 k2
    Text: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr Seite 122 IGBT Presspacks Stacks Accessories 122 Gate Leads for PowerBLOCK Thyristor Modules Gate leads must be ordered separately Baseplate 30 mm 34, 50, 60 mm 50 mm Single 70 mm 34, 50, 60 mm 50 mm Single 70 mm


    Original     		kuka-2006-de-inhalt 28arately kuka Thyristor Modules LZ 02 thyristor k2 k2 PDF