FP15R12W1T4
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FP15R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FP15R12W1T4
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FP10R12W1T4
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FP10R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FP10R12W1T4
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FP15R12W1T4
Abstract: QO120
Text: Technische Information / technical information IGBT-Module IGBT-modules FP15R12W1T4_B3 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FP15R12W1T4
QO120
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FP10R12W1T4
Abstract: igbtinverter
Text: Technische Information / technical information IGBT-Module IGBT-modules FP10R12W1T4_B3 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FP10R12W1T4
igbtinverter
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FP25R12W2T4
Abstract: NA0026
Text: Technische Information / technical information IGBT-Module IGBT-modules FP25R12W2T4 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FP25R12W2T4
FP25R12W2T4
NA0026
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RURU8060
Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers
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FGS15N40L
OT-227
HGT1N30N60A4D
HGT1N40N60A4D
O-220
HGTP3N60C3
HGTP3N60C3D
SGP6N60UF
SGP6N60UFD
HGTP3N60B3
RURU8060
3 phase motor control
FM2G75US60
1N4004 SMA
smps welding machine
Piezoelectric 1Mhz
FFPF60B150DS
INDUCTION HEATING
SGS5N150UF
150 KW motor
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M57962AL
Abstract: IPM Inverter vla531 VLA500-01R M57962 PM200CL1A120 VLA502 MITSUBISHI ipm MODULES ps IGBT 600V 12A VLA500K-01R
Text: IGBT gate drivers DC-DC converters Apr. 2010 PoWer Module Division ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 1 /30 Pre-regulator AC200V or AC440V RECTIFIER VLA31X Isolated DC-DC converter IGBT driver VLA106 VLA503 VLA106 VLA503 VLA106 IGBT Module
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AC200V
AC440V
VLA106
VLA31X
VLA503
M57962AL
IPM Inverter
vla531
VLA500-01R
M57962
PM200CL1A120
VLA502
MITSUBISHI ipm MODULES ps
IGBT 600V 12A
VLA500K-01R
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mosfet 10a 600v
Abstract: D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT
Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S
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IRGBC20S
O-220AB
mosfet 10a 600v
D-12
IRGBC20S
rectifier IGBT
IRGBC20S IGBT
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400V igbt dc to dc buck converter
Abstract: semikron SKm 123D semikron SKm 50 GB 123D SEMITEACH single phase inverter IC IGBT 123D Semitrans inverter rectifier B6U 380 single phase inverter IGBT b6u b6ci
Text: SEMISTACK - IGBT Circuit Irms A Vac / Vdcmax Types B6CI 30 440 / 750 SEMITEACH - IGBT Symbol Conditions Irms SEMITRANS Stack1) Three-phase rectifier + inverter with brake chopper SEMITEACH - IGBT SKM 50 GB 123D SKD 51 P3/250F Features VCES VCE(SAT) VGES
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F/400V
P3/250F
400V igbt dc to dc buck converter
semikron SKm 123D
semikron SKm 50 GB 123D
SEMITEACH
single phase inverter IC IGBT
123D
Semitrans inverter rectifier
B6U 380
single phase inverter IGBT
b6u b6ci
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D-12
Abstract: IRGBC20S IRGBC20S IGBT
Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S
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IRGBC20S
O-220AB
D-12
IRGBC20S
IRGBC20S IGBT
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D-12
Abstract: IRGBC20S
Text: Previous Datasheet Index Next Data Sheet IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.
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IRGBC20S
O-220AB
D-12
IRGBC20S
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VS-GB70LA60UF
Abstract: No abstract text available
Text: VS-GB70LA60UF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier
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VS-GB70LA60UF
OT-227
E78996
2002/95/EC
11-Mar-11
VS-GB70LA60UF
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"SOT-227 B" dimensions
Abstract: No abstract text available
Text: VS-GB70NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier
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VS-GB70NA60UF
OT-227
E78996
2002/95/EC
11-Mar-11
"SOT-227 B" dimensions
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Untitled
Abstract: No abstract text available
Text: VS-GB70NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier
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VS-GB70NA60UF
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VS-GB70NA60UF www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier
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VS-GB70NA60UF
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VS-GB70LA60UF
Abstract: No abstract text available
Text: VS-GB70LA60UF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier
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VS-GB70LA60UF
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-GB70LA60UF
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Untitled
Abstract: No abstract text available
Text: VS-GB70NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier
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VS-GB70NA60UF
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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C82 diode
Abstract: C81 diode
Text: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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10kHz
GA150TD120U
150TD
C82 diode
C81 diode
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A/smd diode t53
Abstract: No abstract text available
Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,
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IRG4ZC70UD
SMD-10
A/smd diode t53
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18672
Abstract: 100TS120U
Text: International IOSR Rectifier PD - 5.060A GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode
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8-40kHz
200kHz
GA100TS120U
A100TS120U
18672
100TS120U
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IQR 336
Abstract: 5056B IOR 336
Text: International IQR Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.056B GA150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode
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8-40kHz
200kHz
GA150TS60U
A150TS60U
IQR 336
5056B
IOR 336
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Untitled
Abstract: No abstract text available
Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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OCR Scan
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IRG4ZH70UD
SMD-10
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Untitled
Abstract: No abstract text available
Text: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA500TD60U
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100TS60U
Abstract: 74c74 ETS-D
Text: International IO R Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.055A GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES= 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode
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8-40kHz
200kHz
GA100TS60U
100TS60U
100TS60U
74c74
ETS-D
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