Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBT W 15 NK 90 Z Search Results

    IGBT W 15 NK 90 Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT W 15 NK 90 Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP50R07U1E4


    Original     		PDF FP50R07U1E4 hteSperrspannungsfestigkeitauf650V

    F4-50R12KS4

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-50R12KS4_B11


    Original     		PDF F4-50R12KS4

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FP50R07U1E4 PressFIT/NTCサーミスタ


    Original     		PDF FP50R07U1E4 Increasedblockingvoltagecapabilityto650V BarcodeCode128

    F4-50R12KS4

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-50R12KS4_B11


    Original     		PDF F4-50R12KS4 BarcodeCode128

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R07U1E4


    Original     		PDF FS50R07U1E4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R07U1E4


    Original     		PDF FP50R07U1E4 Increasedblockingvoltagecapabilityto650V BarcodeCode128

    F4-75R12KS4

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-75R12KS4_B11


    Original     		PDF F4-75R12KS4

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FS50R07U1E4 PressFIT/NTCサーミスタ


    Original     		PDF FS50R07U1E4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-50R12KS4_B11


    Original     		PDF F4-50R12KS4

    F4-50R12KS4

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F4-50R12KS4_B11 EconoPACK 2モジュール高周波スイッチング向け高速IGBT"and SiCダイオード内蔵andPressFIT/ NTCサーミスタ


    Original     		PDF F4-50R12KS4 BarcodeCode128

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R12KT4_B15


    Original     		PDF FS50R12KT4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R12KT4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC


    Original     		PDF FS50R12KT4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KT4_B15


    Original     		PDF FS75R12KT4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KT4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC


    Original     		PDF FS75R12KT4

    F4-75R12KS4

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-75R12KS4_B11


    Original     		PDF F4-75R12KS4 BarcodeCode128

    TDB6HK180N16RR

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules TDB6HK180N16RR EconoPACK 2モジュール EconoPACK™2module 暫定データ/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A 一般応用


    Original     		PDF TDB6HK180N16RR TDB6HK180N16RR

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules TDB6HK180N16RR EconoPACK 2模块 EconoPACK™2module 初步数据/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A 典型应用 • 有源整流器 • 三相半控整流桥 TypicalApplications


    Original     		PDF TDB6HK180N16RR

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules TDB6HK180N16RR EconoPACK 2Modul EconoPACK™2module VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A TypischeAnwendungen • AktiverGleichrichter • HalbgesteuerteB6-Brücke


    Original     		PDF TDB6HK180N16RR

    IGBT W 20 NK 50 Z

    Abstract: diode bridge LT 405 IRG4BC10UD IGBT W 15 NK 90 Z
    Text: PD -9.1677A IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC10UD O-220AB 140ns IGBT W 20 NK 50 Z diode bridge LT 405 IRG4BC10UD IGBT W 15 NK 90 Z

    IGBT W 20 NK 50 Z

    Abstract: IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD
    Text: PD 9.1601 IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20FD O-220AB IGBT W 20 NK 50 Z IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD

    M60030

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum enti by M HPM 7A30A 60B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule MHPM7A30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3)


    OCR Scan     		PDF 7A30A 60B/D MHPM7A30E60DC3) M60030

    MHPM7A20A60A

    Abstract: No abstract text available
    Text: MOTOROLA O rder this documents by M HPM 7A20A 60A/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H PM 7A20A60A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A20E60DC3)


    OCR Scan     		PDF 7A20A MHPM7A20E60DC3) MHPM7A20A60A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum enti by M HPM 7A16A 120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H P M 7A 1 6 A 1 2 0 B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3)


    OCR Scan     		PDF 7A16A 120B/D MHPM7A15S120DC3)

    IRGPC40

    Abstract: No abstract text available
    Text: INTERNAT ION AL RECTIFIER 4055452 QGlübai 1 • 2bE D Data Sheet No. PD-9.665 t - 3 ^ - 0 3 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC40 600V, 40A FEATURES 600V, 40A, TO-247AC IGBT International Rectifier's IRG series of Insulated Gate


    OCR Scan     		PDF IRGPC40 O-247AC S54S2 0G10b2S 001Qb2y IRGPC40