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    IGBT W 15 NK 90 Z Search Results

    IGBT W 15 NK 90 Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT W 15 NK 90 Z Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP50R07U1E4


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    FP50R07U1E4 hteSperrspannungsfestigkeitauf650V PDF

    F4-50R12KS4

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-50R12KS4_B11


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    F4-50R12KS4 PDF

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    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FP50R07U1E4 PressFIT/NTCサーミスタ


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    FP50R07U1E4 Increasedblockingvoltagecapabilityto650V BarcodeCode128 PDF

    F4-50R12KS4

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-50R12KS4_B11


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    F4-50R12KS4 BarcodeCode128 PDF

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    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R07U1E4


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    FS50R07U1E4 PDF

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    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R07U1E4


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    FP50R07U1E4 Increasedblockingvoltagecapabilityto650V BarcodeCode128 PDF

    F4-75R12KS4

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-75R12KS4_B11


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    F4-75R12KS4 PDF

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FS50R07U1E4 PressFIT/NTCサーミスタ


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    FS50R07U1E4 PDF

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    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-50R12KS4_B11


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    F4-50R12KS4 PDF

    F4-50R12KS4

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F4-50R12KS4_B11 EconoPACK 2モジュール高周波スイッチング向け高速IGBT"and SiCダイオード内蔵andPressFIT/ NTCサーミスタ


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    F4-50R12KS4 BarcodeCode128 PDF

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    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R12KT4_B15


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    FS50R12KT4 PDF

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    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R12KT4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC


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    FS50R12KT4 PDF

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    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KT4_B15


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    FS75R12KT4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KT4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC


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    FS75R12KT4 PDF

    F4-75R12KS4

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-75R12KS4_B11


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    F4-75R12KS4 BarcodeCode128 PDF

    TDB6HK180N16RR

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules TDB6HK180N16RR EconoPACK 2モジュール EconoPACK™2module 暫定データ/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A 一般応用


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    TDB6HK180N16RR TDB6HK180N16RR PDF

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    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules TDB6HK180N16RR EconoPACK 2模块 EconoPACK™2module 初步数据/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A 典型应用 • 有源整流器 • 三相半控整流桥 TypicalApplications


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    TDB6HK180N16RR PDF

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    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules TDB6HK180N16RR EconoPACK 2Modul EconoPACK™2module VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A TypischeAnwendungen • AktiverGleichrichter • HalbgesteuerteB6-Brücke


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    TDB6HK180N16RR PDF

    IGBT W 20 NK 50 Z

    Abstract: diode bridge LT 405 IRG4BC10UD IGBT W 15 NK 90 Z
    Text: PD -9.1677A IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    IRG4BC10UD O-220AB 140ns IGBT W 20 NK 50 Z diode bridge LT 405 IRG4BC10UD IGBT W 15 NK 90 Z PDF

    IGBT W 20 NK 50 Z

    Abstract: IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD
    Text: PD 9.1601 IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


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    IRG4BC20FD O-220AB IGBT W 20 NK 50 Z IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD PDF

    M60030

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum enti by M HPM 7A30A 60B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule MHPM7A30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3)


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    7A30A 60B/D MHPM7A30E60DC3) M60030 PDF

    MHPM7A20A60A

    Abstract: No abstract text available
    Text: MOTOROLA O rder this documents by M HPM 7A20A 60A/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H PM 7A20A60A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A20E60DC3)


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    7A20A MHPM7A20E60DC3) MHPM7A20A60A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum enti by M HPM 7A16A 120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H P M 7A 1 6 A 1 2 0 B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3)


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    7A16A 120B/D MHPM7A15S120DC3) PDF

    IRGPC40

    Abstract: No abstract text available
    Text: INTERNAT ION AL RECTIFIER 4055452 QGlübai 1 • 2bE D Data Sheet No. PD-9.665 t - 3 ^ - 0 3 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC40 600V, 40A FEATURES 600V, 40A, TO-247AC IGBT International Rectifier's IRG series of Insulated Gate


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    IRGPC40 O-247AC S54S2 0G10b2S 001Qb2y IRGPC40 PDF