Untitled
Abstract: No abstract text available
Text: SKM400GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM400GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
|
Original
|
PDF
|
SKM400GAL12T4
|
Untitled
Abstract: No abstract text available
Text: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
|
Original
|
PDF
|
SKM200GAL12E4
|
APT0502
Abstract: No abstract text available
Text: APTGL325SK120D3G Buck Chopper Trench + Field Stop IGBT4 Power Module Q1 3 4 5 1 2 VCES = 1200V IC = 325A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop
|
Original
|
PDF
|
APTGL325SK120D3G
APT0502
|
APT0502
Abstract: No abstract text available
Text: APTGL475SK120D3G Buck Chopper Trench + Field Stop IGBT4 Power Module Q1 VCES = 1200V IC = 475A @ Tc = 80°C 3 Application • AC and DC motor control • Switched Mode Power Supplies 4 5 1 Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop
|
Original
|
PDF
|
APTGL475SK120D3G
APT0502
|
Untitled
Abstract: No abstract text available
Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A
|
Original
|
PDF
|
SKM600GA12E4
CA009
|
Untitled
Abstract: No abstract text available
Text: SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules SKM600GA12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
|
Original
|
PDF
|
SKM600GA12T4
SKM600GA12T4
|
Untitled
Abstract: No abstract text available
Text: SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 81 A Tc = 80 °C 62 A 50 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 150 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
|
Original
|
PDF
|
SKM50GAL12T4
|
Untitled
Abstract: No abstract text available
Text: SKM400GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440
|
Original
|
PDF
|
SKM400GAL12E4
|
X2G150HD12P1
Abstract: No abstract text available
Text: HIGH POWER Trench TYPE 2-PACK IGBT MODULE X2G150HD12P1 • CIRCUIT DIAGRAM 1200V 150A PACKAGE : M1 ■ FEATURES ■ APPLICATIONS gy • IGBT4 Trench Technology • 10us short circuit capability • Positive VCE on temperature coefficient • Industry standard package
|
Original
|
PDF
|
X2G150HD12P1
X2G150HD12P1
|
Untitled
Abstract: No abstract text available
Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
|
Original
|
PDF
|
SKM150GB12T4G
|
Untitled
Abstract: No abstract text available
Text: SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 81 A Tc = 80 °C 62 A 50 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 150 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
|
Original
|
PDF
|
SKM50GAL12T4
|
Untitled
Abstract: No abstract text available
Text: SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C
|
Original
|
PDF
|
SKM300GBD12T4
|
Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R17HP4 IHM-BModulmitsoftschaltendemTrench-IGBT4 IHM-Bmodulewithsoft-switchingTrench-IGBT4 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1200A / ICRM = 2400A
|
Original
|
PDF
|
FZ1200R17HP4
|
FZ1600R12HP4
Abstract: No abstract text available
Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FZ1600R12HP4 IHM-Bモジュールソフトスイッチング トレンチIGBT4内蔵 IHM-Bmodulewithsoft-switchingTrench-IGBT4 暫定データ/PreliminaryData
|
Original
|
PDF
|
FZ1600R12HP4
BarcodeCode128
E83335)
FZ1600R12HP4
|
|
|
APT25GLQ120JCU2
Abstract: No abstract text available
Text: APT25GLQ120JCU2 ISOTOP Boost chopper Trench + Field Stop fast IGBT4 Power module VCES = 1200V IC = 25A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C G Features • Trench + Field Stop Fast IGBT 4 Technology
|
Original
|
PDF
|
APT25GLQ120JCU2
OT-227)
APT25GLQ120JCU2
|
SKM400GB12T4
Abstract: No abstract text available
Text: SKM 400GB12T4 -6 7& $ , Absolute Maximum Ratings Symbol Conditions IGBT 4 : -6 7 : 5=6 7 ?+ 5-. '5. 1 >. 7 =. 1 5-. 1 A -. ?+ @ *+ IGBT4 Modules SKM 400GB12T4 B ; B 4 C Units
|
Original
|
PDF
|
400GB12T4
SKM400GB12T4
|
Untitled
Abstract: No abstract text available
Text: SKM400GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440
|
Original
|
PDF
|
SKM400GAR12E4
|
Untitled
Abstract: No abstract text available
Text: SKM300GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C
|
Original
|
PDF
|
SKM300GA12T4
|
Untitled
Abstract: No abstract text available
Text: SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C
|
Original
|
PDF
|
SKM600GA12T4
|
Untitled
Abstract: No abstract text available
Text: APTGL90SK120T1G Buck chopper Trench + Field Stop IGBT4 Power module 5 6 11 Application • AC and DC motor control • Switched Mode Power Supplies Q1 CR1 7 8 3 4 NTC CR2 1 2 VCES = 1200V IC = 90A @ Tc = 80°C 12 Features • Trench + Field Stop IGBT 4 Technology
|
Original
|
PDF
|
APTGL90SK120T1G
|
Untitled
Abstract: No abstract text available
Text: APTCV90TL12T3G Three level inverter CoolMOS & Trench + Field Stop IGBT4 Power Module Trench & Field Stop IGBT4 Q2, Q3: VCES = 1200V ; IC = 40A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 900V ; ID = 23A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
|
Original
|
PDF
|
APTCV90TL12T3G
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FP10R12W1T4 IGBT-Module IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
|
Original
|
PDF
|
FP10R12W1T4
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FZ600R12KP4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled4 diode IGBT-Wechselrichter / IGBT-inverter
|
Original
|
PDF
|
FZ600R12KP4
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FS200R12PT4 IGBT-Module IGBT-modules EconoPACK 4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT™/ NTC EconoPACK™4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and
|
Original
|
PDF
|
FS200R12PT4
|