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    Infineon Technologies AG IGC07T120T6LX1SA2

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC07T120T6LX1SA2)
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    Avnet Americas IGC07T120T6LX1SA2 Waffle Pack 475
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    IGC07T120T6L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC07T120T6L Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 4.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: IGC07T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC07T120T6L L7483C,

    IGC07T120T6L

    Abstract: No abstract text available
    Text: IGC07T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC07T120T6L L7483C, IGC07T120T6L

    IGC07T120T6L

    Abstract: No abstract text available
    Text: IGC07T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC07T120T6L L7483C, IGC07T120T6L