IJ9 CC Search Results

2N6725

Abstract: 2N6724 DSA003749
Contextual Info: NPN SILICON PLANAR MEDIUM DARLINGTON POWER TRANSISTORS Lx&l ISSUE 1- MARCH 94 FEATURES * 50 volt VCED * Gain of 15kat * Ptot= 1 Watt Ic = 0.5 Amp ABSOLUTE MAXIMUM IJ9&&KL RATINGS. SYMBOL PARAMETER Collector-Base Emitter-Base ‘CBO 50 —— ‘CEO 40 ——

ms-6506

Contextual Info: OESC FORM 193 SEP 87 DISTRIBUTION S T A T E M E N T A. * U.S. GOVtRNMiHT HUNTINGOFFICE: 1997— 74«-IJ9/60»l 1 5 9 6 2 -E ll 89-1 Approved for p ublic release; d istribu tion is unlim ited. 1. SCOPE 1 .1 S cope. T h is draw ing d e s c r ib e s d e v ic e re q u ire m e n ts f o r c la s s B m ic r o c ir c u it s in acco rd an ce

CCR18

Abstract: HD6432393TE
Contextual Info: HD6432393TE CCRI8.0MXC7 Ta= 20 Udeg] a. U1H/U1L CU] o 0 Tupica I — — IJnrfit. U1H b. U2H/U2L 5 3 -.3 -.5 400 c, Fosc 8- ^ U1L O'- t r - 3 U2H B- [U] [/] U2L it- ' d. Trise EuS] 300 200 100 60 e, Duty [/] 55 50 r t 45 40 Udd f. Ustart [U]

transistor 7350

Abstract: transistor 7350 A
Contextual Info: S-M 0 S SYST EMS INC 10E D | 7 1 i 2 1 D It QQGD75M 8 | msBammÈÊÊiÊŒMmmm _ T - ^ i - s r PF354-01 CCD LINE SENSOR 0 2 ,0 4 8 Bits Photo-element 9l4jum Pitch •DESCRIPTION The SEA752IH is a 2,048 bits CCD line sensor which has a CCD analog shift register for reading image

M30260F8AGP

Abstract: IC A 2388 40143
Contextual Info: M30260F8AGP - HH FCR4.0MC5 Udd= 5 EU] Fig,a~e Typical e q a. UIH/UIL EU] I h. I I I m m I I I I I I I I I I I I I I l_ rui_ -4Ì. c, Fosc [/] .3 .1 -.1 -.3 -.5 400 _l I I I is ? i d -j J. I, II I I I I I I I I

M30620FCMFP

Contextual Info: M30620FCMFP - 1 FCR4.19MC5 Udd= 3 [U ] F ig .a ’ e Q- 0 T y p ic a l a . U1H/U1L [U l V 111U 3A4 V lfl u - ) , ,UII, b. U2H/U2L 5 3 5 33 - 0-,-4 - , EU1 — 1— M. i V« FQ5C ' i V i i T i i V '1 — ^ - U2H C, V .— 1— : I h!

CXD2667R

Contextual Info: c x d 2 6 6 7 r R f 1 - c c r 2 1 E M o h m ] U d d = 3 . 3 C U 1 7 5 U1H3 uil ] a , U2L 2 0 f 4 4 -W W .1 b . U 2 H / U 2 L s W 1 2 . 6 •n4 1 2 , 6 f 1 1 1 - e -9

transconductance mosfet

Abstract: TFMt SC-65 3AA3
Contextual Info: 2SK1386-01 FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Vyss = ± 3 0 V Guarantee

ij9 cc

Contextual Info: 6MBI20L-060 2 oa g ± /< 7 I^ H T M 'ii : Outline Drawings IG B T ^ i- J U IGBT MODULE 16 : Features • 17 7.5 7 7 7 7 7 16.5 3.5 High Speed Switching • ifeSSiOflE Low Saturation Voltage • S A * ^ — Hfttfc(MOS-y— hlfliit) •t iia — I I Tü I îê w c

BU9532KS2

Abstract: BU9532 resistance 220 ohm bu9532k
Contextual Info: BU9532KS2 - CL Rf EMohm] I Rd [ohm] 2 2 0 a. UIH/U1L - ^ = * ^ i i —u 1 I i 1 I 1 - n - n . .nfl- •A -*. IJ2 L —-as- V _ 1 _ 1 _ 1 _ 1 _ 1 _ 1 _ L_i_ _1_ _ 1_ 1_ c, Fosc [/ ] -I 200 - 100 - -I 60 I I I e, Duttj 55 - 50 - 45

Contextual Info: Radiation Hardened 32C408ARP 4 Megabit SRAM - CMOS 512K x 8 bit Static RAM Ml 1 35 3 NC 3 At A ll W 3 A0 Ml 4 33 3 AS AC [ 1 * N AIT [ 9 El $ D01 I 2» i D06 1 a I v jj 2t 1 DOS DOS! 12 H ) DO« • • • 24 ) a k All ( 14 a AIO £ IS 22 J am lA t5 aw

1FW transistor

Abstract: WFs transistor 1FW 75 1FW 51 transistor 6DI30Z-120 M606 T460
Contextual Info: 6DI3OZ-12O 30a : Outline Drawings — )V POWER TRANSISTOR MODULE . . i . .j. •4$« ‘ 1 High Voltage >7>; u i* J f-t j F e a tu re s ■U l(U Il K rt* • A S O ^ / a L' BV EV BWCW M t Including Free W heeling Diode Excellent Safe Operating Area Insulated Type

TDK CHS MSS

Abstract: "Humidity Sensor" NTCG104BH103JT CHS-MSS mcc 95 08101b TYPE RH-50 K31S TDK TU-20A
Contextual Info: P r o d u c t U p d a t e F i l m S & m ftttgftd Resistance Change Type Humidity Sensor Units with High-Accuracy Detection and Output Control CHS m jfiJSRoHSlB^ S Îtë Z R o H S ifr$ -:£ â M a fi EU D ire c tiv e 2 0 0 2/95 /E C , Series g IÜ Ä ± , a*ä6M Ä-ff!iKi* awaE(PBB «)iiaraE«(PBDE).

MN67481

Abstract: AN3267K sps 6360 mn3802 MN67472 MN675121 AN3952 AN3255FAP AN3386nk an3815k
Contextual Info: ICs/LSIs for VCR, Camera • For VCR Category Type No. Operating Voltage V Brightness signal processor processor amp. AN 3551FAP /FB P 4.5 ~ 5.5 V H S brightness/chroma signal processing AN 3452FBS 4.5 ~ 5.5 V H S brightness/chroma signal processing. Filter built in 3.58MHz

Contextual Info: EDI2CG472256V_ 8 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES 4x256Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Clock Controlled Registered Module Enable EM\ Clock Controlled Registered Bank Enables (E1\,

Nippon capacitors

Contextual Info: HB56SW464DB Series 32 MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4 k Refresh, 1-Bank Module 16 pcs of 4 M x 4 Components HITACHI ADE-203-758C (Z) Rev. 3.0 Nov. 1997 Description The HB56SW464DB is a 4M x 64 dynamic RAM Small Outline Dual In-line Memory Module

TFK U 3212 M

Abstract: mt 15003 TFK 027 HP900 UPD78214 UPD78213GC-AB8 ZTE 751 321 umi 1A 0022h sfh tfk 3212
Contextual Info: 5 s— S 7 • 5 / — h M OS Sf*[§]§& MOS Integrated Circuit ¿ ¿ P 8 t 'y h • D 7 8 2 ^ JU?- 7 7 " * 1 2 , 7 8 2 i 'J ^ F B ^ T ^ - l 2 7 . T " § ? 8 t : " '> h • y > ^ ^ 7 7 ' - 7 8 K / ly 'J - X ^ - 8 2 1 4 <fc U 1 M A -f h L T S U i t » IftW-ORIt

HD63450

Abstract: HD63450P10 HD63450CP12 HD63450-8 63450ps hd63484
Contextual Info: HD63450 Series-CMOS Direct Memory Access Controller T h e H D 6 3 4 5 0 is a C M O S D irect M em ory A cc e s s Controller D M A C . It is upw ardly com patible w ith th e N M O S D M A C H D 68450. In addition to th e N M O S D M A C H D 6 8 4 5 0 fe a tu re s, the

ZTE MF 180 circuit

Abstract: JVC 0J HCJ crystal PD-50p ntl9 kyx 28 lt024 sumi jo 87AD uPD78C18
Contextual Info: A Ü *> oo ^ co Cd al I M I °» Cd M t—* Kl o< oj O 3 oo > S [NJ O r>i $* C/3 4 üSl4 V njg <5 V' V 'S ►d ö •O OO O i—i oo > a 4* X > Ö s U V » X1 1 Oi 4^- « A s wT- 00 -X» 4 ^ >*' ^ rj Pt m s V >i 4 V -A V' x >i A sil ^ K' \r ■fc r V 00 t

RA5E

Abstract: SRFE 1126 IRF 024 RY 227 Tf 227 10A 016T NEC CPUii k7d7 upd78cp14 ZPD* ITT mkad
Contextual Info: M O S Integrated C irc u it PD78C14A pPD 7 8C 14 A iil6b y h A L U , ROM, RAM, A /D n 's*<—9, 7/u • -i § !> CMOS 8 t' v 1- •-v-f 1“ * ', %M.tt9 4 -v/'f ' O o n > h° ^ X7 f- • t ^ > 9 , tilfflx 'J h &X'<T>9 i ij RO M /R A M ) £t£3ftT" 1 ^ T 't o ^ P D 7 8 C 1 4 A i± C M O S i» j t ^ ^ * f im # 'l*

IC-8807

Abstract: xc 8807 pj77 D17218GT MKP 40 url Sss-50 m PD17215 U12042JJ3V2DS00 KBR-1000Y TR KDR BCD
Contextual Info: •?— MEC, 5 * • 5/ — h Y M O S jftiJt[Ë]jʧ M O S In te g rate d C ir c u it 1 w P D 1 7 2 i j ^ f cf ' y 4 b • '> > 5 1 E , 5 - h 1 - z J U ^ - " j~ ? 7 i v h 2 P 1 6 , 1 7 2 1 • CPU t • W ? n r? > F • n h - 7 , 1 7 2 1 8 - J u r n i t m m

IC8048

Abstract: cwt 235 atx D78C1 78C17 HS1ND JRC 8048B UPD78C17CW 78C18 citi coil UPD7801
Contextual Info: M O S *W 5]S& M O S Integrated Circuit / ¿ P D 7 8 C 1 7 , 7 8 C 18 8 t y h " > > ? \ s ? - 'V 7 ° ' — 9 (A/D n > '< — f i t à ) //PD78C18Ü, 16 h* >y h ALU, ROM, RAM, A / D n > /< - ^ , >f r? /> f -<> h • fj ^ > ÿ , ïüffl U $ & { 3 ^ { z 3 1 K ^ M t ' i t i o / ï ' J (ROM/RAM) £

082D JRC

Abstract: shicoh b7 shicoh n7 jrc 082d AAJFF nec 1441 SFH 910 SFH 910 235 scr ky 202 45-65Hz
Contextual Info: ^ _ 5 7 - . N E C ,r M O S S f*[U B & M O S Integrateci Circuit mPD17062 P L U lî Æ & S 'V 'b - t M If, 4 fcf * y h * 7 □ V > f ^ p a y 4 1* "/ \ - m m w - , s i a s t g , s s w t - 7 h t x K •7 ° n i r 7 - v r ^ i c - f l > P h n -v F * g U - 7 • 3 y b p - 7 ^ , P L L ^ ]ffi& '> > "fe -,t ' f - <f £ l f 7

7915a

Abstract: yx 801 TFK ad 164 H13-31C st z7s SCR 131- 6 WJ 60 ic stk 432 090 LHi 878 34B SOT rjh ah
Contextual Info: ? — S • £ / — h NEC Í Í T / \ f Z 4 t ’7 h • '> > $ ^ P D 1 7 0 0 5 l i , T-V i> 9 \s • v -f ? □ zi > ' y ~ f • ~7 >f ^ □ □ > Y P — 5 • - > * x A f f l / \ - K ^ X T7 ^ |* lil L fc 4 t'- y h • > > 7¡\s3- y 7° C M O S h P -7 T -ÎO