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    IM 358 MICRO Search Results

    IM 358 MICRO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    IM 358 MICRO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    im 358 micro

    Abstract: CMA3000 mems
    Text: PRESSEMITTEILUNG - 25. Oktober 2010 VTI expandiert mit Konsumer Gyroskopen und Timing Devices MEMS-Pionier mischt Wachstumsmärkte auf VTI Technologies, ein Micro-Electro-Mechanical Systems-Pionier MEMS mit 20 Jahren Erfahrung, orientiert sich neu und erweitert mit dem Einstieg in das Segment Konsumer-Elektronik seine Zielmärkte.


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    electronica

    Abstract: im 358 micro CMR3000 drehratensensor
    Text: PRESSEMITTEILUNG 8 November 2010 Kleiner, schlanker, schlagkräftiger - VTI stellt den kleinsten und stromsparendsten 3-achsigen Drehratensensor vor Für die Sensierung von Bewegungen in Konsumer-Elektronik-Applikationen stellte VTI Technologies am heutigen Tage auf der Electronica 2010 in München mit dem CMR3000 den weltweit kleinsten digitalen 3achsigen Drehratensensor mit geringstem Energieverbrauch vor.


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    PDF CMR3000 electronica im 358 micro drehratensensor

    ali 3606

    Abstract: FZS1AL06 D-65205 78050 V ADC122S101 DP83848 LM5072 MCF5329 MCF532X COBRA5329KIT
    Text: Dragonfire Reference Platform presented by EBV Elektronik Version 2 Dragonfire Reference Platform presented by EBV Elektronik Timed to coincide with the market launch of Freescale The DragonFire display kit can be connected directly to the Semiconductor’s DragonFire microprocessor-family MCF532x,


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    PDF MCF532x, COBRA5329. FZS1AL06 ali 3606 FZS1AL06 D-65205 78050 V ADC122S101 DP83848 LM5072 MCF5329 MCF532X COBRA5329KIT

    api 662

    Abstract: im 358 micro P160R-XXXKS 222KS
    Text: DC IN C CU REM RR E EN NTA T L m A BE R* IN DU ±1 CT 0% A N @ CE 1 0 (µ 0 H) kH z DC M RES AX I IM STA UM N C (O E hm s) CU R M RE AX N .( TR m A A TI DC NG ) Power Micro i Chip Inductors NU M P160R P160 DA SH Series SERIES P160 FERRITE CORE Physical Parameters


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    PDF -331KS -391KS -471KS -561KS -681KS -821KS -102KS -122KS -152KS -182KS api 662 im 358 micro P160R-XXXKS 222KS

    Untitled

    Abstract: No abstract text available
    Text: micRouiRVE comportEfiTs D C to 15GHz □ R F Coaxial Sw itches C L 358 GENERAL FEATURES These H C S-2 series coaxial switches are S P D T single-pole double-throw failsafe type with HRM resistance. The MTTF is greater than 100,000 (cycles . (S M A ) connections. They are an im provem ent o f the


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    PDF 15GHz C11-14V 120mA DC11-14V DC18-- DC24-30V

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors


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    PDF OT122A OT422A OT423A OT437A OT439A OT440A OT441A OT442A OT443A OT445A

    Untitled

    Abstract: No abstract text available
    Text: MICRO QUADLOK SYSTEM t i f c a j Electronics Application Specification Crânping Corxlrtion of S tx ^ Coitaci Ftexibie-WireType 114-18021-3 AM P _ C 7 1 30MAY03 REV.A _ T f'ïï-ïa y 'J-W R it AMP Amtbtc7?'}>r-:/3y'J-iM ‘%&mL. h' lû lc I i& fiE è ftü - ttA / c


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    PDF 30MAY03

    Simple Circuit Diagram of 230V to 3V Voltage Converter

    Abstract: BP5Q41
    Text: Regulator ICs AC/DC converter unit BP5041 The BP5041 is an A C / DC converter which can be used to supply + 1 2V, 100mA DC output from a commercial pow­ er supply 200 to 230V AC . Using this unit enables simple, easy drive of microcomputers, LEDs, and other electron­


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    PDF BP5041 BP5041 100mA Simple Circuit Diagram of 230V to 3V Voltage Converter BP5Q41

    1402 Transistor

    Abstract: transistor 1402 M107 SD1402
    Text: H /is 'n m n n * -* . n arar» S I r / l C l U O v l f 11 P ro g re s s P o w e re d b y T ec h no log y Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1402 RF & MICROWAVE TRANSISTORS 860-960MHZ CLASS C, MOBILE APPLICATION CLASS C TRANSISTOR


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    PDF 860-960MHZ 870MHz SD1402 SD1402 800MHz 150mA f-870MHz 870MHz 1402 Transistor transistor 1402 M107

    2904N

    Abstract: IC LM 358 LM 358 st 2904 lm 358 ic IC LM 258 LM 358 opamp 358a lm 538 n ic lt 2904
    Text: g ì SCS-THOMSON lm i 58,a-lm258,a IlLitm «! LM358,A-LM2904-NE532 LOW POWER DUAL OPERATIONAL AMPLIFIERS INTERNALLY FREQUENCY COMPENSATED. LARGE DC VOLTAGE GAIN : 100 dB WIDE BANDWIDTH unity gain : 1.1 MHz (tem­ perature compensated) VERY LOW SUPPLY CURRENT/AMPLI


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    PDF a-lm258 LM358 -LM2904-NE532 -2904-N 2904N IC LM 358 LM 358 st 2904 lm 358 ic IC LM 258 LM 358 opamp 358a lm 538 n ic lt 2904

    Firmware ir 8500

    Abstract: D12Test circuit diagram for scsi to usb D12FW auo 002 c 33740 B341 DIP28 PDIUSBD12 S028
    Text: The P D I U S B D I 2 is a high perform ance, cost and featureoptimized U S B interface device. Com m unicating with a system microcontroller using a high speed general purpose parallel P D I U S B D 12 high-speed U S B periphe ral interface interface, it is easily integrated into existing systems, cutting down


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    PDF SBD12 Firmware ir 8500 D12Test circuit diagram for scsi to usb D12FW auo 002 c 33740 B341 DIP28 PDIUSBD12 S028

    IC LM 258

    Abstract: No abstract text available
    Text: r = ± 7 Z S G S - T H O M S O N # M Q (M [iy i ïï[M O (D S l m i 5 8 , a - l m 2 5 8 , a L M 3 5 8 ,A -L M 2 9 0 4 -N E 5 3 2 LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED. • LARGE DC VOLTAGE GAIN : 100 dB ■ W IDE BANDWIDTH (unity gain : 1.1 MHz (tem­


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    PDF UE532 -2904-N IC LM 258

    SOT422A

    Abstract: BLS3135-65
    Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES


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    PDF BLS3135-65 OT422A SOT422A BLS3135-65

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    MA4M2010

    Abstract: 20 pf capacitor M1200
    Text: MA4M Series M N S Microwave Chip Capacitors Features • EXCELLENT REPEATABILITY WAFER TO WAFER AND LOT TO LOT ■ SMALL SIZE ■ LOW LOSS ■ AVAILABLE WITH ROUND AND SQUARE BONDING PADS Description The MA4M series of MNS (metal-nitride-silicon) silicon chip


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    PDF MIL-STD-883B MA4M2010 20 pf capacitor M1200

    8870 dtmf decoder

    Abstract: cmd 8870 dtmf 8870 DTMF circuit 65SC15 BD2000 dtmf 8870 DTMF DECODER 8870 bc7000 8870 dtmf 00-D7
    Text: G65SC151 Standard Option c m d Microcircuits_ _ ADV-CMOS Communications Terminal Unit Telecommunication Microcomputer Features General Description • S ta n d a rd O p tio n to th e G 6 5S C 150 C o m m u n ic a tio n s T e rm in a l


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    PDF G65SC151 G65SC150 DTMF40 DTMF60 65SC151 8870 dtmf decoder cmd 8870 dtmf 8870 DTMF circuit 65SC15 BD2000 dtmf 8870 DTMF DECODER 8870 bc7000 8870 dtmf 00-D7

    l85c

    Abstract: L 358 l358
    Text: miCROUJAVE COmPOflEílTS DC to R F Mobile Switches MS 1GHz □ GENERAL FEATURES Mobile Switches (M S) are compact and inexpen­ sive coaxial switches designed for the inspection of □ the internal output of portable telephone terminals. i _i M A T ER IA L* F IN ISH


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    PDF MS-135-C S-135 MS-135 MS-I35-C l85c L 358 l358

    IN456

    Abstract: 1n3321 1N3320B 1N3341B
    Text: 1N 3 3 05 thru 1N 3350B and Microsemi Corp. SANTA ANA, CA j /ri,*,*,«« SCOTTSDALE, AZ / For more information call: / 1N4549B thru iM A C K ftB • 5 5 0 B 602 941-6300 FE A T U R E S SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9 TO 200V • LOW ZENER IMPEDANCE


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    PDF 1N4549B 3350B 1N4549B IN45606 MN4S618 1N4552B 1N45530 1N4554B 1N45556 1N4556B IN456 1n3321 1N3320B 1N3341B

    Untitled

    Abstract: No abstract text available
    Text: MLL5913 thru MLL5956 Microsemi Corp. ? A-IV/I tub ftotiti experts 1V4 f t SCO rrSD ALE , 4 / h>i im*ie information call (61 2) 941-6300 D E S C R IP T IO N / F E A T U R E S LEADLESS GLASS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING


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    PDF MLL5913 MLL5956

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor


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    PDF RX1214B170W 7/00/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


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    PDF RX1214B300Y RX1214B300Y OT439A 7/00/02/pp12

    J122

    Abstract: R358 D35B SAB10 8870 DTMF circuit D35B 60 G65SC150 G65SC151 DTMF 8870 BC4000
    Text: G65SC151 Standard Option Microcircuits_ ADV-CMOS Communications Terminal Unit Telecommunication Microcomputer Features General Description • Standard O p tio n to the G65SC150 C o m m u n ica tio n s Term inal U nit (C TU ) • G enerates sign a ls c o m p a tib le w ith sw itche d telep h o ne


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    PDF G65SC151 G65SC150 cTMF60 OTMF80 DTMF35 DTMF40 65SC151 J122 R358 D35B SAB10 8870 DTMF circuit D35B 60 DTMF 8870 BC4000

    LM358 definition

    Abstract: LM358S LM258 LM2904N-8 lm2904n LM358AM lm2904s LM358 drift voltage LM2904 LM358AN
    Text: LM258/A, LM358/A, LM2904 DUAL OPERATIONAL AMPLIFIER DUAL OPERATIONAL AMPLIFIERS The LM 258 series consists of four independent, high gain, internally Frequency com pensated operational am plifiers w hich w ere designed specifically to operate from a single pow er supply over a w ide range


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    PDF LM258/A, LM358/A, LM2904 LM258 100dB LM358 definition LM358S LM2904N-8 lm2904n LM358AM lm2904s LM358 drift voltage LM358AN

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES D iffused em itter ballasting resistors providing excellent cu rre n t sharing


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    PDF LLE18040X 125002/00/02/pp12