Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC10XSD200 Rev. 2.0, 9/2013 Dual 10 mOhm High Side Switch 10XSD200 The 10XSD200 device is part of a 36 V dual high side switch product family with integrated control, and a high number of protective and
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MC10XSD200
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC16XSD200 Rev. 1.0, 7/2013 Dual 16 mOhmHigh Side Switch 16XSD200 The 16XSD200 device is part of a 36 V dual high side switch product family with integrated control, and a high number of protective and
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MC16XSD200
16XSD200
16XSD200
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC10XS4200 Rev. 3.0, 5/2013 Dual 24 V, 10 mOhm High Side Switch 10XS4200 The 10XS4200 device is part of a 24 V dual high side switch product family with integrated control, and a high number of protective and
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MC10XS4200
10XS4200
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC06XS4200 Rev. 2.0, 5/2013 Dual 24 V, 6.0 mOhm High Side Switch 06XS4200 The 06XS4200 device is part of a 24 V dual high side switch product family with integrated control and a high number of protective and
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MC06XS4200
06XS4200
06XS4200
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F81027C aECTROMC D E K N IIN C . IMegiS SRAM Module 1Megx8StaticRAM CMOS, Module F e a tu re s 1 Meg x 8 bit CM OS Static Random Access Memory • Access Times 55 thru 100ns • Data Retention Function EDI8F81027LP • TTL Compatible Inputs and Outputs
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EDI8F81027C
EDI8F81027C
512Kx8
EDI8F81027LP)
100ns
EDI8F81027LP
EDI8F81027C70B6C
EDI8F81027C70B6I.
32PinDP
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Untitled
Abstract: No abstract text available
Text: EDI68128C K 1 Megabit USKxS UV Erasable CMOS EPROM A ELECTROMC DC9GN& N C IMegabit (512Kx8) UV Erasable CMOS EPROM Features Fast Read Access Time - 45ns Low Power CMOS Operation The EDI68128C is a low-power, high performance, 1,048,576-bit ultraviolet erasable programmable read
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EDI68128C
AT27C010)
200mA
512Kx8)
EDI68128C
576-bit
128Kx8
EDK58128C45LB"
EDI68128C55LB
EDI68128C70LB
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TRW Connectors
Abstract: marking B26 diode SCHOTTKY trw resistor 810 souriau Schottky Diode B29 A2-15 SOURIAU Robinson Nugent pga 1020J1C 1N5818 74LS174
Text: TDC1020 High-Speed Monolithic A/D Converter Features 10-Bit, 20Msps • 20Msps Conversion Rate • 10-Bit Resolution • Overflow Flag The TRW TDC1020 is a 20Msps IMegaSample Per Second full-parallel flash) analog-to-digital converter, capable of converting a video signal into a stream of
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TDC1020
10-Bit
20Msps
10-Bit,
20Msps
TDC1020
TRW Connectors
marking B26 diode SCHOTTKY
trw resistor
810 souriau
Schottky Diode B29
A2-15 SOURIAU
Robinson Nugent pga
1020J1C
1N5818
74LS174
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PDF
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linvex technology
Abstract: SST superflash 5555 QT
Text: |g r PRELIMINARY LINVEX TECHNOLOGY. CORP._ LX59CF4010 512K x 8 Bit FLASH and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX59CF4010 is a combination memory chip that consists of 4 Megabit FLASH Memory organized as 512K words by 8 bits and a IMegabit
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LX59CF4010
A0-A18
A0-A16
A17-A18
40-PIN
linvex technology
SST superflash
5555 QT
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HCT112
Abstract: HCT-112 74HC 74HCT S0 1J
Text: 7 4H C /H C T 112 flip-flops DUAL JK FLIP-FLOP WITH SET AND RESET; IMEGATIVE-EDGE TRIGGER FEATURES TYPICAL The 74HC/HCT112 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky T T L LSTTL . They are specified in compliance w ith JEDEC standard no.7A.
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74HC/HCT112
HCT112
HCT-112
74HC
74HCT
S0 1J
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 11 Ï E 1 71^4142 ODDBbb11! KMM411024/KMM511024 KMM411025/KMM511025 *i 1~~ SAM SUNG Semiconductor Preliminary IMeg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION The Samsung KM M 4U024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM
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KMM411024/KMM511024
KMM411025/KMM511025
4U024,
KMM411025,
KMM511024
KMM511025,
KM41256/7
18-pin
KMM411024
KMM411025
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1024Kx8
Abstract: No abstract text available
Text: ^EDI EDI8F81024C EL fCm ON C DESIGNS N C IMegxB SRAM Module 1Klegx8 Static RAM Features CMOS, Module 1024Kx8 bit CMOS Static The EDI8F81024C is a 8 Megabit CMOS Static RAM based Random Access Memory on eight 128Kx8 Static RAMs mounted on a multi-layered • Access Times 70 thru 100ns
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EDI8F81024C
1024Kx8
100ns
EDI8F81024LP)
EDI8F81024C
128Kx8
EDI8F81024C70BSC
EDI8F81024C70BSI.
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Untitled
Abstract: No abstract text available
Text: W 3X EDI411024C m g x 1 Fast Page DRAM ELECTRONIC DESIGNS, INC. IMegabitx 1Dynamic RAM CMOS, Monolithic Tîie EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1Megabit x1. During Read and Write cycles each bit is addressed
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EDI411024C
EDI411204C
EDI411024CRev.
20LeadCS0J
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RAS 0910
Abstract: No abstract text available
Text: ^EDI EDI411024C 1Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC IMegabitx 1 Dynamic RAM CMOS, Monolithic The EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1 Megabit x1. During Read and Write cycles each bit is addressed 1Mx1 bit CMOS Dynamic
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EDI411024C
100ns
EDI411204C
EDI411024C70ZB
EDI411024C70ZI
11ndicator
RAS 0910
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PDF
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Untitled
Abstract: No abstract text available
Text: J PRELIMINARY INFORMATION IMegabit Module XM28C010 f i a r 128K x 8 Bit Electrically Erasable PROM FEATURES • High Density IMegabit 128K x 8 E2PR0M Module • Access Time of 250 ns at -55°C to + 125°C • Base Memory Component: Xicor CMOS X2UC256 • JEDEC Standard 32-Pin 600 Mil Wide
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XM28C010
X2UC256
32-Pin
X28C010
--64-Byte
MIL-STD-883
XM28C010
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Untitled
Abstract: No abstract text available
Text: ^EDL EDI8F81026C IMegxB SRAM Module EIECTPOWC DESIGNS NC. 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout Features 1 Meg x 8 bit CMOS Static The EDI8F81026C is an 8 Megabit CMOS Static RAM based Random Access Memory on two 512Kx8 Static RAMs mounted on a multi-layered
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EDI8F81026C
EDI8F81026C
512Kx8
/777//7T77/7
EDI8F81026C20M6C
EDI8F81026C25M6C
EDI8F81026C35M6C
EDI6F81026C25M6C
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RAS 0910
Abstract: No abstract text available
Text: ^EDI EDI411024C 1Megx1 Fast Page DRAM ELECTRONIC OESIGNSL HC. IMegabitx 1 Dynamic RAM CMOS, Monolithic Features 1Mx1 bit CMOS Dynamic Random Access Memory • Access Times 70 ,80,100ns • 8ms Refresh Rate • Low Operating Power Dissipation • Low Standby Power
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100ns
EDI411024C
EDI411204C
20LeadCS
20LeadFlatpack
01581USA
RAS 0910
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ECG953
Abstract: ECG954 ECG963 ECG964
Text: EC G : PHILIPS -r INC 17E bbSBTSfl DQD5137 ECG953, ECG 954 Adjustable Pos and IMeg Voltage Regulators Sem iconductors E C G 9 5 3 - Positive Voltage Regulator E C G 9 5 4 - Negative Voltage Regulator Features * O utput current in excess o f 1 A .125 _ 3.18
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DGD5137
ECG953
ECG954
ECG95X
ECG953/954
ECG953,
ECG963
ECG964
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NSL-7550
Abstract: 67Meg 200MEG NSL-7530 320v Silonex
Text: SILONEX ; Prelim inary Data Sheet TO -5 PHOTOCONDUCTIVE CELLS MATURES • S ix Photoconductive Materials • Power Dissipation @ 25°C 200 mW - Hermetically Sealed 12f5 mW - Plastic Encapsulated • Resistance Tolerance: ± 40% @ 1 Ftc ± 3 3 - 1 / 3 % & 2 Ftc
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NSL-3510
NSl-3520
NSl-3530
NSL-3540
HSl-4510
NSL-4520
NSL-4530
NSL-7550
67Meg
200MEG
NSL-7530
320v
Silonex
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OAK TECHNOLOGY
Abstract: oti-067 OTI067 OTI-077 oak technology oti 067 cga to vga Hercules Graphics Card oak oti-067 128x48 96x64
Text: OAK T E C H N O L O G Y INC SSE P • bV E ^ M O S 0 0 0 0 1 7 5 <333 H 0 A K T —T - £ 2 .- 3 3 - if 5 " Oak Technology Inc August 1991 O T T -0 7 7 Extended High Resolution VGA Graphics Controller with 1MByte Video Memory Support DESCRIPTION The OTI-077 is a highly integrated, single chip Extended High Resolution VGA Graphics Controller compatible with
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b72T405
00D017S
OTT-077
OTI-077
OTI-067.
OTT-077
OTI-067,
1024x768
1280x1024
OAK TECHNOLOGY
oti-067
OTI067
oak technology oti 067
cga to vga
Hercules Graphics Card
oak oti-067
128x48
96x64
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PDF
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Untitled
Abstract: No abstract text available
Text: Hybrid Chip and HDI Components Nichrome on Alumina Chip Resistors Chips as Networks Features Detailed Specifications For detailed specifications, and outlined drawings and ordering information see the Network Section of this catalog, page 16. Microwave Chip Resistors
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6AK5W
Abstract: 6ak5 tube 6AK5 5651 tube MVAE 6ak5w tube Scans-0017480 5654
Text: 5654/6AK5W/6096 PREMIUM TU BE TUNO-SOL PENTODE M INIATURE 3 COATED U N I P O T E N T I A L ,4 "maj C T-5± 1^ '2 MAX. UJUUJ TYPE CATHODE HEA TE R 6 .3 3‘ 0 . 1 7 5 AMP. VOLTS AC OR DC 1 1-4 MAY * ANY MOUNTING P O S I TION GLASS BULB BOTTOM VIEW M I N I A T U R E BUTTON
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654/6AK5W/6096
5654/6AK5W/6096
6AK5W
6ak5 tube
6AK5
5651 tube
MVAE
6ak5w tube
Scans-0017480
5654
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PDF
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OTI-087
Abstract: OTI-068 80386dx memory interfacing TL016 80386 chipset CHIPset for 80286 128x48 486 system bus 80386DX 80486
Text: OAK T E C HN O LO f i Y INC ¡¡¡¡E » • bTS^HOS 0000201 SSS »OAKT OAK TECHNOLOGY INC System Solutions in Silicon PRODUCT OVERVIEW O T I-0 8 7 LOCAL BUS VGA GRAPHICS CONTROLLER DESCRIPTION The OTI-OS7 is a highly integrated, single chip Local Bus Color Graphics Controller compatible with the IBM VGA standard.
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0000api
OTI-087
OTI-087
24-bit
640x480
1024x768
1280x1024
I016n,
OTI-068
80386dx memory interfacing
TL016
80386 chipset
CHIPset for 80286
128x48
486 system bus
80386DX
80486
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PDF
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LMC668
Abstract: No abstract text available
Text: PRELIM IN A R Y LMC668A/LMC668 Chopper Stabilized Operational Amplifier G eneral D escription The LMC668 is a high performance versatile chopper-stabi lized amplifier with low input offset voltage. This low offset is achieved through a nulling scheme that provides continuous
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LMC668A/LMC668
LMC668
14-pinhe
LMC668,
LMC668A/
LMC668
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Untitled
Abstract: No abstract text available
Text: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2029/EL2029C 0,01 % 200 US Op A TflJ ' Gemi, O f 5 Stttblc F e a tu r e s G e n e ra l D e sc r ip tio n • Settling tim e for 10V swings to 0.1% of 100 ns; to 0.01% of 200 ns • High slew rate—900 V/ is • Large power bandwidth—5 M Hz
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EL2029/EL2029C
MIL-STD-883
EL2029
80Meg
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