IN 956 Search Results

IN 956 Result Highlights (5)

Part	Manufacturer	Description
74F433SPC	Rochester Electronics LLC	FIFO,
74F403SPC	Rochester Electronics LLC	Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics.
CY7C429-20VC	Rochester Electronics LLC	FIFO, 2KX9, 20ns, Asynchronous, CMOS, PDSO28, 0.300 INCH, SOJ-28
CY7C429-25JI	Rochester Electronics LLC	FIFO, 2KX9, 25ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32
CY7C4285-15ASC	Rochester Electronics LLC	FIFO, 64KX18, 10ns, Synchronous, CMOS, PQFP64, 10 X 10 MM, TQFP-64

IN 956 Price and Stock

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Klein Tools Inc 6956INS Screwdrivers, Nut Drivers & Socket Drivers Slim-Tip 1000V Insulated Screwdriver, #1 Phillips, 6-Inch
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	6956INS		4			1 $19.06 10 $18 100 $16.42 1000 $16.18 10000 $16.18	Buy Now
Hirschmann Electronics GmbH & Co Kg TofinoXe-0200T1T1TDDZ90003TATX Networking Modules TofinoXe-0200T1T1TDDZ90003TATX
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Mouser Electronics	TofinoXe-0200T1T1TDDZ90003TATX					1 $2850.16 10 $2850.16 100 $2850.16 1000 $2850.16 10000 $2850.16	Get Quote
Central Semiconductor Corp 2N5956 TIN/LEAD Bipolar Transistors - BJT 50Vcbo 50Vcev 45Vcer 5.0Vebo 40W
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Mouser Electronics	2N5956 TIN/LEAD					1 - 10 - 100 $15.63 1000 $13.33 10000 $13.33	Get Quote
Molex 19193-0089 Ring Tongue Terminal 14-16AWG 17.7mm 8.9mm Tin VersaKrimp™ Bag
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	19193-0089		956			1 $0.2728 10 $0.2728 100 $0.2728 1000 $0.2728 10000 $0.2428	Buy Now
United Chemi-Con Inc HHXA500ARA101MJA0G Cap Aluminum Polymer Hybrid 100uF 50VDC 20% (10 X 10mm) SMD 0.028 Ohm 1600mA 4000h 125°C Automotive T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	HHXA500ARA101MJA0G		956			1 - 10 - 100 $1.051 1000 $0.917 10000 $0.759	Buy Now

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IN 956 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Silicon Technology Reliability Abstract: 72559 Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 5251 467 181 956 1.948 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,	Original	PDF	JESD85, 29-Jul-08 Silicon Technology Reliability 72559
Untitled Abstract: No abstract text available Text: Silicon Technology Reliability Vishay Siliconix P-CHANNEL ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 23 354 3 956 497 623 1.314 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,	Original	PDF	JESD85, 28-Jul-08
Sony CXA1191M Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -\|5V in gnd in\|- 24 2 -\|5V in gnd in\|- 23 3 -\|5V in gnd in\|- 22	Original	PDF	0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
harris rtx 2010 Abstract: HS-RTX2010RH 32Kword A45A harris rtx 2000 HS8-RTX2010RH MIL-PRF38535 Text: HS-RTX2010RH Radiation Hardened Real Time Express Microcontroller March 1996 Features Applications • Devices QML Qualified in Accordance with MIL-PRF38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95636 and Harris’ QM Plan	Original	PDF	HS-RTX2010RH MIL-PRF38535 125ns 120MeV/mg/cm2 -55oC 125oC, 16-Bit 32-Bit harris rtx 2010 HS-RTX2010RH 32Kword A45A harris rtx 2000 HS8-RTX2010RH MIL-PRF38535
computer mouse circuit diagram Abstract: computer mouse optical circuit diagram "Mouse Controller" ball mouse mechanical mouse microsoft optical mouse crystal 3.58MHZ oscillator single chip optical mouse SERIAL MOUSE CONTROLLER PHOTO FOR ZENER DIODE 6.2V Text: EM83702 EM83702 ALL IN ONE MOUSE CONTROLLER ALL IN ONE MOUSE CONTROLLER Patent Number : 38715, 95661 R.O.C Patent Pending : 84200836 (R.O.C) GENERAL DESCRIPTION The EM83702 Mouse Controller is specially designed to control mouse device. This single chip can interface	Original	PDF	EM83702 EM83702 RS-232C. EM83702A 58MHz) EM83702B computer mouse circuit diagram computer mouse optical circuit diagram "Mouse Controller" ball mouse mechanical mouse microsoft optical mouse crystal 3.58MHZ oscillator single chip optical mouse SERIAL MOUSE CONTROLLER PHOTO FOR ZENER DIODE 6.2V
Untitled Abstract: No abstract text available Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter	Original	PDF	5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.
555 triangular wave Abstract: IRG4BC30FD1PBF Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter	Original	PDF	IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. O-220 555 triangular wave IRG4BC30FD1PBF
swiching transistor Abstract: 9561 600v 8A ultra fast recovery diode to220 Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter	Original	PDF	IRG4BC30FD1PbF 20kHz O-220AB Minimi10 FD100H06A5. O-220 swiching transistor 9561 600v 8A ultra fast recovery diode to220
Untitled Abstract: No abstract text available Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter	Original	PDF	5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.
Untitled Abstract: No abstract text available Text: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	PDF	-95651A IRG4BC30FPbF O-220AB O-220AB
Untitled Abstract: No abstract text available Text: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	PDF	IRG4BC30FPbF O-220AB O-220AB O-220AB.
Untitled Abstract: No abstract text available Text: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	PDF	-95651A IRG4BC30FPbF O-220AB O-220AB TC4BC30FPbF
Untitled Abstract: No abstract text available Text: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	PDF	IRG4BC30FPbF O-220AB O-220AB
Untitled Abstract: No abstract text available Text: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	PDF	IRG4BC30FPbF O-220AB O-220AB TC037) O-220AB.

transistor A6t 75 Abstract: A6T TRANSISTOR Text: PD - 95692A IRG4BC30U-SPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	PDF	5692A IRG4BC30U-SPbF VC957) EIA-418. transistor A6t 75 A6T TRANSISTOR
Voltage Doubler application Abstract: application of voltage doubler Schottky Doubler Voltage Doubler introduction rf power detector voltage doubler 5964-4236E stub tuner matching 5082-0023 Text: Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in HP Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The shunt chip	Original	PDF	5964-4236E Voltage Doubler application application of voltage doubler Schottky Doubler Voltage Doubler introduction rf power detector voltage doubler 5964-4236E stub tuner matching 5082-0023
transistor A6t 75 Abstract: A6T TRANSISTOR a8p transistor ic DAD 1000 transistor A6t 15 transistor a6t AAGR transistor A6t 14 transistor A6t 96 AN-994 Text: PD - 95692A IRG4BC30U-SPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	PDF	5692A IRG4BC30U-SPbF EIA-418. transistor A6t 75 A6T TRANSISTOR a8p transistor ic DAD 1000 transistor A6t 15 transistor a6t AAGR transistor A6t 14 transistor A6t 96 AN-994
Voltage Doubler application Abstract: application of voltage doubler Schottky Doubler Microwave detector diodes microwave detector diode 5082-0009 stub tuner matching Text: hH Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in HP Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The shunt chip	Original	PDF	5964-4236E Voltage Doubler application application of voltage doubler Schottky Doubler Microwave detector diodes microwave detector diode 5082-0009 stub tuner matching
Untitled Abstract: No abstract text available Text: Shrouded Headers 2.00 x 2.00 mm [0.079 x 0.079 in. Description Through-Mount Vertical Header Part Number 90309 . 0.80 mm ' 0.031 In.) RECOM M EN DED HO LE PATTERN r - i i- Description Surface-Mount Vertical Header Part Number 95615 2.00 m m (0.039 in.) 1.00 mm _	OCR Scan	PDF	DPS-12-011 iDDS411 00023bfl
AN-956A Abstract: No abstract text available Text: AN-956A Using Surface-Mount Devices HEXFET is a tradem ark o f International Rectifier by W. Parrish Summary Surface-Mount Packages S u rfa c e -m o u n t te c h n o lo g y is g a in in g in creasin g accep tan ce over th ro u g h -h o le m o u n tin g . In te rn a tio n a l	OCR Scan	PDF	AN-956A AN-956A
5082-2565 Abstract: power semiconductor 1973 noise diode Text: H vl S a c k a b d APPLICATION NOTE 956-3 Flicker Noise in Schottky Diodes IN TRO D U CTIO N At frequencies above a few megahertz, Schottky barriers emit noise at a power level which is half as mucM1] as the familiar Johnson noise of a re sistor. The presence of series resistance in the	OCR Scan	PDF
2N956 Abstract: 2N718A Text: 2N718A 2N 956 SILICON PLANAR NPN AMPLIFIERS AND SWITCHES T he 2N 7 1 8 A and 2N 9 5 6 are s ilico n planar e p ita xia l NPN tran sisto rs in Jedec T O -1 8 m etal case, in te n de d fo r high-speed sw itch in g and a m p lifie r applica tio ns. ABSOLUTE M A XIM U M RATINGS	OCR Scan	PDF	2N718A 2N718A 2N956 300juA 2N956
Taiyo 93 T Abstract: Taiyo 93 r Text: TAIYO YUDEN N R 9560 H Y B R I D ICs CAR AUDIO Dolby B /C Type NR NR9560 is a h ig h ly in te g ra te d 1C w h ic h c o n ta in s in its in OUTLINE DIMENSIONS s id e CXA1332, w h ic h is on e c h ip 1C o f 2 c h a n n e l d o lb y B /C ty p e n o is e re d u c tio n syste m , and its a u x ilia ry c irc u its .	OCR Scan	PDF	NR9560 CXA1332, NR9560 Taiyo 93 T Taiyo 93 r
BERG CONNECTOR 50 pin Abstract: MIL-P-55110 10 PIN 2 ROW berg connector berg electronics berg connector 36 pin B-159 QQ-W-343 2 pin BERG CONNECTOR pm50 95660-XYYH Text: 2.54 X Unshrouded Headers 2.54 mm 0.100 x 0.100 in. Description Straight 3-Row BergStik II Headers 4.06 mm (0.160 in.) MIN _ 1.02 mm (0.040 in.) \ DIA i i i i 7.37 mm (0.290 in.) l I I 5.06 mm (0.200 in.) ! I 2.54 mm (0.100 In.) 2.54 mm (0.100 in.) NON-ACCUMULATIVE	OCR Scan	PDF	A183396-D199 BUS-12-050 1DDS411 BERG CONNECTOR 50 pin MIL-P-55110 10 PIN 2 ROW berg connector berg electronics berg connector 36 pin B-159 QQ-W-343 2 pin BERG CONNECTOR pm50 95660-XYYH

IN 956 Search Results

IN 956 Result Highlights (5)

IN 956 Price and Stock

Klein Tools Inc 6956INS

Hirschmann Electronics GmbH & Co Kg TofinoXe-0200T1T1TDDZ90003TATX

Central Semiconductor Corp 2N5956 TIN/LEAD

Molex 19193-0089

United Chemi-Con Inc HHXA500ARA101MJA0G

IN 956 Datasheets Context Search

Silicon Technology Reliability

Untitled

Sony CXA1191M

harris rtx 2010

computer mouse circuit diagram

Untitled

555 triangular wave

swiching transistor

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

transistor A6t 75

Voltage Doubler application

transistor A6t 75

Voltage Doubler application

Untitled

AN-956A

5082-2565

2N956

Taiyo 93 T

BERG CONNECTOR 50 pin